Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography. Open Access

Avit G, Robin Y, Liao Y, Nan H, Pristovsek M, Amano H

Scientific reports Vol. 11 ( 1 ) page： 6754 2021.3

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

CRYSTAL GROWTH & DESIGN Vol. 21 ( 3 ) page： 1878 - 1890 2021.3

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 14 ( 3 ) page： 036505 2021.3

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution Open Access

Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

CRYSTALS Vol. 11 ( 3 ) page： 1 - 27 2021.3

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication Open Access

Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

QUANTUM BEAM SCIENCE Vol. 5 ( 1 ) page： 5 2021.3

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer Open Access

Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

APPLIED PHYSICS LETTERS Vol. 118 ( 7 ) page： 072103 2021.2

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020) Open Access

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS Vol. 11 ( 2 ) page： 524 - 524 2021.2

3D GaN Power Switching Electronics: A Revival of Interest in ELO

Wang, J; Amano, H; Xie, YH

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) 2021

Language：English Publishing type：Research paper (scientific journal) Publisher：2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

We reported the first-time utilization of ELO (epitaxial lateral overgrowth) GaN (gallium nitride) for power diodes. The undesired stage of coalescence related to ELO is avoided by virtue of a novel 3D device architecture built on the ELO GaN islands on foreign substrate which features pure-lateral p-n and n+ -n-junctions and electrodes lying on the opposing sidewalls of the island. Excellent electrical performance was demonstrated, revealing a strong potential of ELO GaN with 3D device architecture for power switching applications.

DOI： 10.1109/EDTM50988.2021.9420859

Web of Science

Scopus

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Open Access

Jadhav A., Ozawa T., Baratov A., Asubar J.T., Kuzuhara M., Wakejima A., Yamashita S., Deki M., Honda Y., Roy S., Amano H., Sarkar B.

IEEE Journal of the Electron Devices Society Vol. 9 page： 570 - 581 2021

Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Journal of the Electron Devices Society

Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency behavior (above 20 GHz) of the device. In this work, a modified small signal equivalent circuit model of AlGaN/GaN MOS-HEMTs is presented. The key feature of the proposed model is that the values of the different circuit elements in the model are considered to be frequency dependent in nature and not constants. The frequency dependent value of each circuit element is mathematically represented using polynomial functions where the coefficients of the functions are determined via a least-square curve fitting approach. This frequency dependent attribute of the circuit element values ensures that the proposed model is very accurate at high frequencies without sacrificing the compactness of the model topology. The accuracy of the proposed model has been verified up to 50 GHz using experimentally measured Y-parameters of AlGaN/GaN MOS-HEMTs having a different gate dielectric and gate length.

DOI： 10.1109/JEDS.2021.3081463

Open Access

Web of Science

Scopus

Development of UV-C laser diodes on AlN substrate

Kushimoto M.

Proceedings of SPIE - The International Society for Optical Engineering Vol. 11686 2021

Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations

Piva F.

Proceedings of SPIE - The International Society for Optical Engineering Vol. 11686 2021

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 117 ( 24 ) page： 242104 2020.12

The 2020 UV emitter roadmap Open Access

Amano Hiroshi, Collazo Ramon, Santi Carlo De, Einfeldt Sven, Funato Mitsuru, Glaab Johannes, Hagedorn Sylvia, Hirano Akira, Hirayama Hideki, Ishii Ryota, Kashima Yukio, Kawakami Yoichi, Kirste Ronny, Kneissl Michael, Martin Robert, Mehnke Frank, Meneghini Matteo, Ougazzaden Abdallah, Parbrook Peter J., Rajan Siddharth, Reddy Pramod, Roemer Friedhard, Ruschel Jan, Sarkar Biplab, Scholz Ferdinand, Schowalter Leo J., Shields Philip, Sitar Zlatko, Sulmoni Luca, Wang Tao, Wernicke Tim, Weyers Markus, Witzigmann Bernd, Wu Yuh-Renn, Wunderer Thomas, Zhang Yuewei

Journal of Physics D: Applied Physics Vol. 53 ( 50 ) page： 503001 2020.12

Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

Applied Physics Express Vol. 13 ( 12 ) page： 124001 2020.12

Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices

Seong Tae-Yeon, Amano Hiroshi

SURFACES AND INTERFACES Vol. 21 page： 100765 2020.12

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods Open Access

Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi

SCIENTIFIC REPORTS Vol. 10 ( 1 ) page： 19048 2020.11

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy Open Access

Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 35 ( 11 ) page： 115005 2020.11

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: From injection efficiency to mid-gap state generation

PIVA F.

Photonics Research Vol. 8 ( 11 ) page： 1786 - 1791 2020.11

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

Yang X, Pristovsek M, Nitta S, Liu Y, Honda Y, Koide Y, Kawarada H, Amano H

ACS applied materials & interfaces Vol. 12 ( 41 ) page： 46466 - 46475 2020.10

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 117 ( 15 ) page： 152104 2020.10

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Papers - AMANO, Hiroshi