Papers - AMANO, Hiroshi
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Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering Reviewed
Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 291-294 1998
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The dependence of the band gap on alloy composition in strained AlGaN on GaN Reviewed
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 205 ( 0 ) page： R7-R8 1998
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Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 195 ( 0 ) page： 309-313 1998
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The residual donor binding energy in AlGaN epitaxial layers Reviewed
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 165 ( 0 ) page： R3-R4 1998
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On the nature of radiative recombination processes in GaN Reviewed
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series Vol. 156 ( 0 ) page： 239-244 1998
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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S
Solid State Communications Vol. 105 ( 0 ) page： 497-501 1998
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Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy Reviewed
Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 1994-1996 1998
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters Reviewed
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 36 ( 0 ) page： 5393-5408 1997
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Photoluminescence of exciton-polaritons in GaN Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 50 ( 0 ) page： 130-133 1997
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Electron gas in modulation doped GaN/AlGaN structures Reviewed
Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 207-210 1997
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Reviewed
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1997
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Electronic structure and temperature dependence of excitons in GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 172-175 1997
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Melt-back etching of GaN Reviewed
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 295-298 1997
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Recessed gate GaN MODFETs Reviewed
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 247-250 1997
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The excitonic bandgap of GaN: dependence on substrate Reviewed
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics Vol. 41 ( 0 ) page： 239-241 1997
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance Reviewed
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics Vol. 41 ( 0 ) page： 189-193 1997
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Optical characterization of GaN and related materials Reviewed
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics Vol. 41 ( 0 ) page： 181-184 1997
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Reviewed
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L382-L385 1997
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Optical properties of strained AlGaN and GaInN on GaN Reviewed
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L177-L179 1997
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Quantum beat spectroscopy on excitons in GaN Reviewed
Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology- Vol. 50 ( 0 ) page： 205-207 1997