Papers - AMANO, Hiroshi
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 161-166 2002
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Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1065-1069 2002
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Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 235 ( 0 ) page： 129-134 2002
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Migration of dislocations in strained GaN heteroepitaxial layers Reviewed
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 952-955 2002
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Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 850-854 2002
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Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 755-758 2002
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Mass transport of AlxGa1-xN Reviewed
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 485-488 2002
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High-efficiency UV light-emitting diode Reviewed
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 393-398 2002
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 453-455 2002
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Annihilation of threading dislocations in GaN/AlGaN Reviewed
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 366-370 2002
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UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 296-300 2002
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 21-26 2002
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Novel aspects of the growth of nitrides by MOVPE Reviewed
Amano H, Akasaki I
Journal of Physics: Condensed Matter Vol. 13 ( 0 ) page： 6935-6944 2001
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Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum Vol. 353-356 ( 0 ) page： 791-794 2001
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Compensation mechanism in MOCVD and MBE grown GaN:Mg Reviewed
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands Vol. 308-310 ( 0 ) page： 38-41 2001
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DX-like behavior of oxygen in GaN Reviewed
Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands Vol. 302&303 ( 0 ) page： 23-38 2001
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Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
J. Crystal Growth Vol. 230 ( 0 ) page： 473-476 2001
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Near K-edge absorption spectra of III-V nitrides Reviewed
Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S
Physica Status Solidi B: Basic Research Vol. 228 ( 0 ) page： 461-465 2001
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Optical characterization of InGaN/GaN MQW structures without in phase separation Reviewed
Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 228 ( 0 ) page： 157-160 2001
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure Reviewed
Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N
J. Crystal Growth Vol. 223 ( 0 ) page： 83-91 2001