Papers - AMANO, Hiroshi
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High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN Reviewed
Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 117-120 2001
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Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells Reviewed
Wetzel C, Kasumi M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 183 ( 0 ) page： 51-60 2001
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Control of strain in GaN by a combination of H2 and N2 carrier gases Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. Vol. 89 ( 0 ) page： 7820-7824 2001
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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant Reviewed
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 82 ( 0 ) page： 137-139 2001
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Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices Reviewed
Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 79 ( 0 ) page： 3062-3064 2001
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Control of strain in GaN using an In doping-induced hardening effect Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu
Physical Review B: Condensed Matter and Materials Physics Vol. 64 ( 0 ) page： 035318/1-035318/5 2001
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Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer Reviewed
Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L498-L501 2001
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Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L420-L422 2001
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Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence Reviewed
Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L195-L197 2001
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Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals Reviewed
Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L16-L19 2001
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Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride Reviewed
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L1280-L1282 2001
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Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers Reviewed
Chow W W, Amano H
IEEE Journal of Quantum Electronics Vol. 37 ( 0 ) page： 265-273 2001
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Mass transport of GaN and reduction of threading dislocations Reviewed
Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I
Surface Review and Letters Vol. 7 ( 0 ) page： 561-564 2000
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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 414-420 2000
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Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer Reviewed
Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 405-413 2000
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Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas Reviewed
Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
J. Crystal Growth Vol. 221 ( 0 ) page： 327-333 2000
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Structural characterization of Al1-xInxN lattice-matched to GaN Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 209 ( 0 ) page： 419-423 2000
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Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells Reviewed
Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 39 ( 0 ) page： 413-416 2000
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Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer Reviewed
Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 39 ( 0 ) page： 390-392 2000
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Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design Reviewed
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 39 ( 0 ) page： 2425-2427 2000