Papers - AMANO, Hiroshi
-
Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 92 ( 0 ) page： 3657-3661 2002
-
Atomic arrangement at the AlN/ZrB2 interface Reviewed
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 81 ( 0 ) page： 3182-3184 2002
-
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 802-804 2002
-
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 3093-3095 2002
-
Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 1373-1375 2002
-
Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 41 ( 0 ) page： 11-14 2002
-
Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 20 ( 0 ) page： 216-218 2002
-
Critical issues in AlxGa1-xN growth Reviewed
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands Vol. 19 ( 0 ) page： 219-222 2002
-
Annihilation of threading dislocations in GaN/AlGaN Reviewed
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 366-370 2002
-
Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1065-1069 2002
-
Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 235 ( 0 ) page： 129-134 2002
-
Migration of dislocations in strained GaN heteroepitaxial layers Reviewed
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 952-955 2002
-
Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 850-854 2002
-
Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 755-758 2002
-
Mass transport of AlxGa1-xN Reviewed
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 485-488 2002
-
High-efficiency UV light-emitting diode Reviewed
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 393-398 2002
-
Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 453-455 2002
-
Novel aspects of the growth of nitrides by MOVPE Reviewed
Amano H, Akasaki I
Journal of Physics: Condensed Matter Vol. 13 ( 0 ) page： 6935-6944 2001
-
Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum Vol. 353-356 ( 0 ) page： 791-794 2001
-
Compensation mechanism in MOCVD and MBE grown GaN:Mg Reviewed
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands Vol. 308-310 ( 0 ) page： 38-41 2001