Papers - AMANO, Hiroshi
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GaN-based UV/blue light emitting devices Reviewed
I. Akasaki, H. Amano, K. Itoh, N. Koide and K. Manabe
Inst. Phys. Conf. Ser. Vol. 129 ( 0 ) page： 851-6 1993
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The growth of single crystalline gallium nitride on a silicon substrate using aluminum nitride as an intermediate layer Reviewed
A. Watanabe, T. Takeuchi K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki
J. Crystal Growth Vol. 128 ( 0 ) page： 391-6 1993
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The growth of thick gallium nitride film on sapphire substrate by using zinc oxide buffer layer Reviewed
T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki
J. Crystal Growth Vol. 128 ( 0 ) page： 384-390 1993
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Growth of gallium nitride and aluminum gallium nitride for UV/blue p-n junction diodes Reviewed
I. Akasaki, H. Amano, H. Murakami, M. Sassa H. Kato and K. Manabe
J. Crystal Growth Vol. 128 ( 0 ) page： 379-383 1993
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Radiative energy transfer in magnesium-doped gallium nitride/chromium(3+)-doped alumina (GaN:Mg/Al2O3:Cr3+) epitaxial systems Reviewed
K. Maier, J. Schneider, I. Akasaki and H. Amano.
Jpn. J. Appl. Phys. Vol. 32 ( 0 ) page： L846-L848 1993
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Perspective of the UV/blue light emitting devices based on gallium nitride and related compounds Reviewed
Akasaki Isamu, Amano Hiroshi.
Optoelec. -Devices and Technol. Vol. 7 ( 0 ) page： 49-56 1992
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Hydride vapor phase epitaxial growth of a high quality gallium nitride film using a zinc oxide buffer layer Reviewed
Detchprohm T., Hiramatsu K., Amano H., Akasaki I.
Appl. Phys. Lett. Vol. 61 ( 0 ) page： 2688-2690 1992
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Cathodoluminescence properties of undoped and zinc-doped aluminum gallium nitride grown by metalorganic vapor phase epitaxy Reviewed
Itoh Kenji, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 30 ( 0 ) page： 1604-1608 1991
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Stimulated emission in MOVPE-grown gallium nitride (GaN) film Reviewed
Amano Hiroshi, Asahi Tsunemori, Kito Masahiro, Akasaki Isamu.
J. Lumin. Vol. 48-49 ( 0 ) page： 889-892 1991
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Photoluminescence of magnesium-doped p-type gallium nitride (GaN) and electroluminescence of gallium nitride (GaN) p-n junction LED Reviewed
Akasaki Isamu, Amano Hiroshi, Kito Masahiro, Hiramatsu Kazumasa.
J. Lumin. Vol. 48-49 ( 0 ) page： 666-670 1991
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Growth and properties of single crystalline gallium nitride films by hydride vapor phase epitaxy Reviewed
Akasaki I., Naniwae K., Itoh K., Amano H., Hiramatsu K.
Crystal Properties and Preparation Vol. 32-34 ( 0 ) page： 154-157 1991
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Growth of silicon-doped aluminum gallium nitride on (0001) sapphire substrate by metalorganic vapor phase epitaxy Reviewed
Murakami Hiroshi, Asahi Tsunemori, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.
J. Crystal Growth Vol. 115 ( 0 ) page： 648-651 1991
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Doping of gallium nitride with silicon and properties of blue m/i/n/n+ gallium nitride LED with silicon-doped n+-layer by MOVPE Reviewed
Koide N., Kato H., Sassa M., Yamasaki S., Manabe K., Hashimoto M., Amano H., Hiramatsu K., Akasaki I.
J. Crystal Growth Vol. 115 ( 0 ) page： 639-642 1991
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Growth mechanism of gallium nitride grown on sapphire with aluminum nitride buffer layer by MOVPE Reviewed
Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., Oki K.
J. Crystal Growth Vol. 115 ( 0 ) page： 628-633 1991
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Cross-sectional TEM study of microstructures in MOVPE gallium nitride films grown on a -alumina with a buffer layer of aluminum nitride Reviewed
Kuwano Noriyuki, Shiraishi Tadayoshi, Koga Akihiro, Oki Kensuke, Hiramatsu Kazumasa, Amano Hiroshi, Itoh Kenji, Akasaki Isamu.
J. Crystal Growth Vol. 115 ( 0 ) page： 381-387 1991
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Growth of single crystalline gallium nitride film on silicon substrate using 3C silicon carbide as an intermediate layer Reviewed
Takeuchi Tetsuya, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.
J. Crystal Growth Vol. 115 ( 0 ) page： 634-638 1991
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MOVPE growth of gallium nitride on a misoriented sapphire substrate Reviewed
Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu, Kato Hisaki, Koide Norikatsu, Manabe Katsuhide.
J. Crystal Growth Vol. 107 ( 0 ) page： 509-512 1991
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Dynamics of laser sputtering at gallium nitride, gallium phosphide, and gallium arsenide surfaces Reviewed
Namiki A., Katoh K., Yamashita Y., Matsumoto Y., Amano H., Akasaki I.
J. Apl. Phys. Vol. 70 ( 0 ) page： 3268-3274 1991
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Metalorganic vapor phase epitaxial growth and properties of gallium mononitride/aluminum gallium nitride (Al01Ga09N) layered structures Reviewed
Itoh Kenji, Kawamoto Takeshi, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 30 ( 0 ) page： 1924-1927 1991
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Stimulated emission near ultraviolet at room temperature from a gallium nitride (GaN) film grown on sapphire by MOVPE using an aluminum nitride (AlN) buffer layer Reviewed
Amano Hiroshi, Asahi Tsunemori, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 29 ( 0 ) page： L205-L206 1990