Papers - AMANO, Hiroshi
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Direct patterning of the current confinement structure for p-type Column-III nitrides by low-energy electron beam irradiation treatment Reviewed
Inamori Masahiko, Sakai Hiromitsu, Tanaka Toshiyuki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 34 ( 0 ) page： 1190-3 1995
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Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device Reviewed
I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike
Jpn. J. Appl. Phys. Vol. 34 ( 0 ) page： L1517-L1519 1995
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Polarization of light from an optically pumped (Al-Ga-N)/(Ga-In-N) double heterostructure Reviewed
S. T. Kim, T. Tanaka, H. Amano and I. Akasaki
Mater. Sci. & Eng. B Vol. 26 ( 0 ) page： L5-L7 1994
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Iron acceptors in gallium nitride (GaN) Reviewed
K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki and H. Amano.
Materials Science Forum Vol. 143-147 ( 0 ) page： 1993/08/01 1994
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ODMR studies of MOVPE-grown GaN epitaxial layers Reviewed
M. Kunzer, U. Kaufmann, K. Maier, J. Schneider, N. Herres, I. Akasaki and H. Amano.
Materials Science Forum Vol. 143-147 ( 0 ) page： 87-92 1994
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Widegap column-III nitride semiconductors for UV/blue light emitting devices Reviewed
I. Akasaki and H. Amano.
Journal of the Electrochemical Society Vol. 141 ( 0 ) page： 2266-71 1994
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Perspective of UV/blue light emitting devices based on column-III nitrides Reviewed
I. Akasaki and H. Amano.
Institute of Physics Conference Series Vol. 136 ( 0 ) page： 249-56 1994
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p-Type conduction in Mg-doped GaN and Al008Ga092N grown by metalorganic vapor phase epitaxy Reviewed
T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike
Appl. Phys. Lett. Vol. 65 ( 0 ) page： 593-4 1994
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Deep level defects in n-type GaN Reviewed
W. Goetz, N. M. Johnson, H. Amano and I. Akasaki
Appl. Phys. Lett. Vol. 65 ( 0 ) page： 463-5 1994
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Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers Reviewed
J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm and K. Hiramatsu
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 857-9 1994
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Optical gain of optically pumped Al01Ga09N/GaN double heterostructure at room temperature Reviewed
S. T. Kim, H. Amano, I. Akasaki and N. Koide
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 1535-6 1994
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Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure Reviewed
H. Amano, T. Tanaka Y. Kunii, K. Kato S. T. Kim and I. Akasaki
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 1377-9 1994
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Room-temperature low-threshold surface-stimulated emission by optical pumping from aluminum gallium nitride/gallium nitride (Al01Ga09N/GaN) double heterostructure Reviewed
H. Amano, N. Watanabe, N. Koide and I. Akasaki.
Jpn. J. Appl. Phys. Vol. 32 ( 0 ) page： L1000-L1002 1993
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Conductivity control of gallium nitride and fabrication of UV/blue GaN light emitting devices Reviewed
I. Akasaki, H. Amano, N. Koide M. Kotaki Mand K. Manabe
Phys. B Vol. 185 ( 0 ) page： 428-32 1993
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Electric properties of zinc-doped gallium nitride-type light emitting diode Reviewed
M. R. H. Khan, I. Akasaki, H. Amano, N. Okazaki and K. Manabe
Phys. B Vol. 185 ( 0 ) page： 480-4 1993
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GaN-based UV/blue light emitting devices Reviewed
I. Akasaki, H. Amano, K. Itoh, N. Koide and K. Manabe
Inst. Phys. Conf. Ser. Vol. 129 ( 0 ) page： 851-6 1993
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The growth of single crystalline gallium nitride on a silicon substrate using aluminum nitride as an intermediate layer Reviewed
A. Watanabe, T. Takeuchi K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki
J. Crystal Growth Vol. 128 ( 0 ) page： 391-6 1993
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The growth of thick gallium nitride film on sapphire substrate by using zinc oxide buffer layer Reviewed
T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki
J. Crystal Growth Vol. 128 ( 0 ) page： 384-390 1993
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Growth of gallium nitride and aluminum gallium nitride for UV/blue p-n junction diodes Reviewed
I. Akasaki, H. Amano, H. Murakami, M. Sassa H. Kato and K. Manabe
J. Crystal Growth Vol. 128 ( 0 ) page： 379-383 1993
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Radiative energy transfer in magnesium-doped gallium nitride/chromium(3+)-doped alumina (GaN:Mg/Al2O3:Cr3+) epitaxial systems Reviewed
K. Maier, J. Schneider, I. Akasaki and H. Amano.
Jpn. J. Appl. Phys. Vol. 32 ( 0 ) page： L846-L848 1993