Papers - AMANO, Hiroshi
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GaInN-based solar cells using GaInN/GaInN superlattices Reviewed
Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al
Physica Status Solidi C Vol. 8 ( 7-8 ) page: 2463-2465 2011.7
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Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed
Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al
Physica Status Solidi C Vol. 8 ( 7-8 ) page: 2089-2091 2011.7
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AlGaN/GaInN/GaN heterostructure field-effect transistor Reviewed
Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi
Physica Status Solidi A Vol. 208 ( 7 ) page: 1614-1616 2011.7
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Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes Reviewed
Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al
Physica Status Solidi A: Vol. 208 ( 7 ) page: 1594-1596 2011.7
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Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed
Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu
Physica Status Solidi C Vol. 8 ( 7-8 ) page: 2424-2426 2011.7
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Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate Reviewed
Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al
Applied Physics Express Vol. 4 ( 6 ) page: 064102/1-064102/3 2011.6
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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semipolar GaN Reviewed
Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y.-Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.
Applied Physics Letters Vol. 98 ( 5 ) page: 051902/1-051902/3 2011.5
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Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method Reviewed
Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al
Physica Status Solidi A Vol. 208 ( 5 ) page: 1191-1194 2011.5
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Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells Reviewed
Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro; Ide, Kimiyasu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi
Applied Physics Express Vol. 4 ( 5 ) page: 052101/1-052101/3 2011.5
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Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer Reviewed
Nonaka, K.; Asai, T.; Ban, K.; Yamamoto, J.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Wu, Z. H.
Physica Status Solidi C Vol. 8 ( 5 ) page: 1467-1470 2011.5
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Evidence for moving of threading dislocations during the VPE growth in GaN thin layers Reviewed
Kuwano, Noriyuki; Miyake, Hideto; Hiramatsu, Kazumasa; Amano, Hiroshi; Akasaki, Isamu
Physica Status Solidi C Vol. 8 ( 5 ) page: 1487-1490. 2011.5
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Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes Reviewed
Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi
Physica Status Solidi A Vol. 208 ( 5 ) page: 1175-1178 2011.5
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Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method Reviewed
Yamakawa, Masayasu; Murata, Kazuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Azuma, Masanobu
Applied Physics Express Vol. 4 ( 4 ) page: 045503/1-045503/3 2011.4
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Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed
Wu, Z. H.; Kawai, Y.; Fang, Y.-Y.; Chen, C. Q.; Kondo, H.; Hori, M.; Honda, Y.; Yamaguchi, M.; Amano, H.
Applied Physics Letters Vol. 98 ( 14 ) page: 141905/1-141905/3 2011.3
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Demonstration of diamond field effect transistors by AlN/diamond heterostructure Reviewed
Imura, Masataka; Hayakawa, Ryoma; Watanabe, Ei-Ichiro; Liao, Mei-Yong; Koide, Yasuo; Amano, Hiroshi
Physica Status Solidi RRL: Vol. 5 ( 3 ) page: 125-127. 2011.3
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Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Reviewed
Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu.
Applied Physics Letters Vol. 98 ( 7 ) page: 072104/1-072104/3 2011.2
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Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer Reviewed
Takeda, Kenichiro; Nagata, Kengo; Ichikawa, Tomoki; Nonaka, Kentaro; Ogiso, Yuji; Oshimura, Yoshinori; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al
Physica Status Solidi C Vol. 8 ( 2 ) page: 464-466 2011.2
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GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate Reviewed
Kuwahara, Yousuke; Fujii, Takahiro; Sugiyama, Toru; Iida, Daisuke; Isobe, Yasuhiro; Fujiyama, Yasuharu; Morita, Yoshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi, Amano Hiroshi; et al
Applied Physics Express Vol. 4 ( 2 ) page: 021001/1-021001/3 2011.2
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High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed
Sugiyama, Takayuki; Amano, Hiroshi; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu
Japanese Journal of Applied Physics Vol. 50 ( 1 ) page: 01AD03/1-01AD03/3 2011.1
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MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates Reviewed
Paek, Jihyun; Yamaguchi, Masahito; Amano, Hiroshi
Journal of Crystal Growth Vol. 323 ( 1 ) page: 315-318 2011.1