Papers - AMANO, Hiroshi
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High-quality (Ga,In)N/GaN multiple quantum wells Reviewed
Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1403-5 1996
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Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1265-6 1996
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Free exciton emission in GaN Reviewed
Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I
Physical Review B: Condensed Matter Vol. 54 ( 0 ) page： 2518-2522 1996
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Free and bound excitons in thin wurtzite GaN Reviewed
Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1996
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Determination of the conduction band electron effective mass in hexagonal GaN Reviewed
M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1178-L1179 1995
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Characterization of residual transition metal ions in GaN and AlN Reviewed
Baur J., Kaufmann U., Kunzer M., Schneider J., Amano H., Akasaki I., Detchprohm T., Hiramatsu K.
Materials Science Forum Vol. 196-201 ( 0 ) page： 20333 1995
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Crystal growth of column III nitrides and their applications to short wavelength light emitters Reviewed
Akasaki I, Amano H
J. Crystal Growth Vol. 146 ( 0 ) page： 455-61 1995
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Magneto-optical investigation of the neutral donor bound exciton in GaN Reviewed
Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I
Solid State Communications Vol. 96 ( 0 ) page： 53-56 1995
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Exciton lifetimes in GaN and GaInN Reviewed
Harris C I, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 840-2 1995
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Surface-mode stimulated emission from optically pumped GaInN at room temperature Reviewed
Kim S T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 267-9 1995
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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1966/08/01 1995
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Photoluminescence of residual transition metal impurities in GaN Reviewed
Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1140-2 1995
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p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed
Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1112-13 1995
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Photoemission capacitance transient spectroscopy of n-type GaN Reviewed
Gotz W, Johnson N M, Street R A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1340-2 1995
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Properties of the yellow luminescence in undoped GaN epitaxial layers Reviewed
. Hofmann D. M., Kovalev D., Steude G., Meyer B. K., Hoffmann A., Eckey L., Heitz R., Detchprom T., Amano H., Akasaki I.
Physical Review B: Condensed Matter Vol. 52 ( 0 ) page： 16702-6 1995
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Exciton dynamics in GaN Reviewed
. Bergman J.P., Monemar B., Amano H., Akasaki I.
Lietuvos Fizikos Zurnalas Vol. 35 ( 0 ) page： 569-574 1995
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GaN/GaInN/GaN double heterostructure light emitting diode fabricated using plasma-assisted molecular beam epitaxy Reviewed
Sakai Hiromitsu, Koide Takashi, Suzuki Hiroyuki, Yamaguchi Machiko, Yamasaki Shiro, Koike Masayoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1429-L1431 1995
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Direct patterning of the current confinement structure for p-type Column-III nitrides by low-energy electron beam irradiation treatment Reviewed
Inamori Masahiko, Sakai Hiromitsu, Tanaka Toshiyuki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 34 ( 0 ) page： 1190-3 1995
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Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device Reviewed
I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike
Jpn. J. Appl. Phys. Vol. 34 ( 0 ) page： L1517-L1519 1995
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Polarization of light from an optically pumped (Al-Ga-N)/(Ga-In-N) double heterostructure Reviewed
S. T. Kim, T. Tanaka, H. Amano and I. Akasaki
Mater. Sci. & Eng. B Vol. 26 ( 0 ) page： L5-L7 1994