Papers - AMANO, Hiroshi
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N K-edge x-ray-absorption study of heteroepitaxial GaN films Reviewed
Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I
Physical Review B: Condensed Matter Vol. 56 ( 0 ) page： 13380-13386 1997
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Shortest wavelength semiconductor laser diode Reviewed
Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H
Electronics Letters Vol. 32 ( 0 ) page： 1105-1106 1996
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Resonant Raman scattering in hexagonal GaN Reviewed
Behr D, Wagner J, Schneider J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2404/06/01 1996
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High-quality (Ga,In)N/GaN multiple quantum wells Reviewed
Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1403-5 1996
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Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1265-6 1996
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Free exciton emission in GaN Reviewed
Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I
Physical Review B: Condensed Matter Vol. 54 ( 0 ) page： 2518-2522 1996
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Free and bound excitons in thin wurtzite GaN Reviewed
Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1996
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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers Reviewed
Wetzel C, Haller E E, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2547/09/01 1996
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Crystal growth of column-III nitride semiconductors and their electrical and optical properties Reviewed
Akasaki I, Amano H
J. Crystal Growth Vol. 163 ( 0 ) page： 86-92 1996
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Raman and photoluminescence imaging of the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Detchprohm T, Hiramatsu K, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 149 ( 0 ) page： 97-102 1996
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Present and future of group III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
Institute of Physics Conference Series Vol. 145 ( 0 ) page： 19-22 1996
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Relaxation and recombination dynamics in GaN/Al2O3 epilayers Reviewed
Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 927-930 1996
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Remote plasma hydrogenation of Mg-doped GaN Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 1031-1034 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 935-938 1996
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Exciton dynamics in GaN Reviewed
Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 931-934 1996
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Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode Reviewed
Akasaki Isamu, Amano Hiroshi, Suemune ikuo
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 2010/07/10 1996
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Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance Reviewed
Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H
J. Apl. Phys. Vol. 79 ( 0 ) page： 8007-8010 1996
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 990-992 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3456-3458 1996
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3390-3392 1996