Papers - AMANO, Hiroshi
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Effects of buffer layers in heteroepitaxy of gallium nitride Reviewed
Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Advances in the Understanding of Crystal Growth Mechanisms ( 0 ) page： 399-413 1997
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Progress and prospect of group-III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
J. Crystal Growth Vol. 175/176 ( 0 ) page： 29-36 1997
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Photoluminescence and optical gain in highly excited GaN Reviewed
Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Journal of Luminescence Vol. 72-74 ( 0 ) page： 59-61 1997
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Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well Reviewed
Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I
J. Apl. Phys. Vol. 81 ( 0 ) page： 1005-1007 1997
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Optical properties of tensile-strained wurtzite GaN epitaxial layers Reviewed
Chichibu S, Azuhata T, Sota T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 70 ( 0 ) page： 2085-2087 1997
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Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances Reviewed
Zimmermann R, Euteneuer A, Mobius J, Weber D, Hofmann M R, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter Vol. 56 ( 0 ) page： R12722-R12724 1997
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N K-edge x-ray-absorption study of heteroepitaxial GaN films Reviewed
Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I
Physical Review B: Condensed Matter Vol. 56 ( 0 ) page： 13380-13386 1997
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Shortest wavelength semiconductor laser diode Reviewed
Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H
Electronics Letters Vol. 32 ( 0 ) page： 1105-1106 1996
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 990-992 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3456-3458 1996
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3390-3392 1996
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Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 1255-1257 1996
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75Å GaN channel modulation doped field effect transistors Reviewed
Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2849-2851 1996
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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers Reviewed
Wetzel C, Haller E E, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2547/09/01 1996
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Resonant Raman scattering in hexagonal GaN Reviewed
Behr D, Wagner J, Schneider J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2404/06/01 1996
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High-quality (Ga,In)N/GaN multiple quantum wells Reviewed
Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1403-5 1996
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Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1265-6 1996
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Free exciton emission in GaN Reviewed
Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I
Physical Review B: Condensed Matter Vol. 54 ( 0 ) page： 2518-2522 1996
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Free and bound excitons in thin wurtzite GaN Reviewed
Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1996
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Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance Reviewed
Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H
J. Apl. Phys. Vol. 79 ( 0 ) page： 8007-8010 1996