Papers - AMANO, Hiroshi
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Photoluminescence of GaN: Effect of electron irradiation Reviewed
Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 2968-2970 1998
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Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect Reviewed
Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 1691-1693 1998
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Pit formation in GaInN quantum wells Reviewed
Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y
Appl. Phys. Lett. Vol. 72 ( 0 ) page： 710-712 1998
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Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP Reviewed
Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 58 ( 0 ) page： R13351-R13354 1998
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Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures Reviewed
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 58 ( 0 ) page： 1442-1450 1998
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Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L697-L699 1998
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GaN based laser diode with focused ion beam etched mirrors Reviewed
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L444-L446 1998
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN Reviewed
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L316-L318 1998
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Investigation of the leakage current in GaN p-n junctions Reviewed
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1202-L1204 1998
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Stress and defect control in GaN using low temperature interlayers Reviewed
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1540-L1542 1998
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters Reviewed Open Access
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 36 ( 0 ) page： 5393-5408 1997
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Electronic structure and temperature dependence of excitons in GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 172-175 1997
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Melt-back etching of GaN Reviewed
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 295-298 1997
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Recessed gate GaN MODFETs Reviewed Open Access
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 247-250 1997
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The excitonic bandgap of GaN: dependence on substrate Reviewed
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics Vol. 41 ( 0 ) page： 239-241 1997
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance Reviewed
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics Vol. 41 ( 0 ) page： 189-193 1997
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Optical characterization of GaN and related materials Reviewed
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics Vol. 41 ( 0 ) page： 181-184 1997
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Reviewed
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L382-L385 1997
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Optical properties of strained AlGaN and GaInN on GaN Reviewed
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L177-L179 1997
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Reviewed
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1997