Papers - AMANO, Hiroshi
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Optical characterization of GaN and related materials Reviewed
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics Vol. 41 ( 0 ) page： 181-184 1997
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Reviewed
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L382-L385 1997
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Optical properties of strained AlGaN and GaInN on GaN Reviewed
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L177-L179 1997
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Quantum beat spectroscopy on excitons in GaN Reviewed
Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology- Vol. 50 ( 0 ) page： 205-207 1997
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Effects of buffer layers in heteroepitaxy of gallium nitride Reviewed
Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Advances in the Understanding of Crystal Growth Mechanisms ( 0 ) page： 399-413 1997
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Progress and prospect of group-III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
J. Crystal Growth Vol. 175/176 ( 0 ) page： 29-36 1997
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Photoluminescence and optical gain in highly excited GaN Reviewed
Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Journal of Luminescence Vol. 72-74 ( 0 ) page： 59-61 1997
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Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well Reviewed
Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I
J. Apl. Phys. Vol. 81 ( 0 ) page： 1005-1007 1997
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Optical properties of tensile-strained wurtzite GaN epitaxial layers Reviewed
Chichibu S, Azuhata T, Sota T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 70 ( 0 ) page： 2085-2087 1997
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Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances Reviewed
Zimmermann R, Euteneuer A, Mobius J, Weber D, Hofmann M R, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter Vol. 56 ( 0 ) page： R12722-R12724 1997
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N K-edge x-ray-absorption study of heteroepitaxial GaN films Reviewed
Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I
Physical Review B: Condensed Matter Vol. 56 ( 0 ) page： 13380-13386 1997
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Shortest wavelength semiconductor laser diode Reviewed
Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H
Electronics Letters Vol. 32 ( 0 ) page： 1105-1106 1996
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 990-992 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3456-3458 1996
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3390-3392 1996
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Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 1255-1257 1996
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75Å GaN channel modulation doped field effect transistors Reviewed
Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2849-2851 1996
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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers Reviewed
Wetzel C, Haller E E, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2547/09/01 1996
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Resonant Raman scattering in hexagonal GaN Reviewed
Behr D, Wagner J, Schneider J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2404/06/01 1996
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High-quality (Ga,In)N/GaN multiple quantum wells Reviewed
Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1403-5 1996