Papers - AMANO, Hiroshi
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Growth and luminescence properties of magnesium-doped gallium nitride (GaN) prepared by MOVPE Reviewed
Amano Hiroshi, Kitoh Masahiro, Hiramatsu Kazumasa, Akasaki Isamu.
J. Electrochem. Soc. Vol. 137 ( 0 ) page： 1639-1641 1990
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UV and blue electroluminescence from aluminum/magnesium-doped gallium nitride/gallium nitride (Al/GaN:Mg/GaN) LED treated with low-energy electron beam irradiation (LEEBI) Reviewed
Amano H., Kitoh M., Hiramatsu K., Akasaki I.
Inst. Phys. Conf. Ser. Vol. 106 ( 0 ) page： 725-730 1990
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Preparation of aluminum gallium nitride/gallium nitride heterostructure by MOVPE Reviewed
Ito Kenji, Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth Vol. 104 ( 0 ) page： 533-538 1990
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Growth of single crystal gallium nitride substrate using hydride vapor phase epitaxy Reviewed
Naniwae Kouichi, Itoh Shigetoshi, Amano Hiroshi, Itoh Kenji, Hiramatsu Kazumasa, Akasaki Isamu.
J. Crystal Growth Vol. 99 ( 0 ) page： 381-384 1990
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Cathodoluminescence of MOVPE-grown gallium nitride layer on a -alumina Reviewed
Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth Vol. 99 ( 0 ) page： 375-380 1990
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P-type conduction in magnesium-doped gallium nitride treated with low-energy electron beam irradiation (LEEBI) Reviewed
H. Amano, M. Kito, K. Hiramatsu, I. Akasaki
Jpn. J. Appl. Phys. Vol. 28 ( 0 ) page： L2112-L2114 1989
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Effects of aluminum nitride buffer layer on crystallographic structure and on electrical and optical properties of gallium nitride and aluminum gallium nitride (Ga1-xAlxN, 0< x < 0.4) films grown on sapphire substrate by MOVPE Reviewed
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki
J. Crystal Growth Vol. 98 ( 0 ) page： 209-219 1989
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Heteroepitaxial growth and the effect of strain on the luminescent properties of gallium mononitride films on (11-20) and (0001) sapphire substrates Reviewed
H. Amano, K. Hiramatsu, I. Akasaki
Jpn. J. Appl. Phys. Vol. 27 ( 0 ) page： L1384-L1386 1988
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Electron beam effects on blue luminescence of zinc-doped gallium mononitride Reviewed
H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii
J. Lumin. Vol. 40-41 ( 0 ) page： 121-122 1988
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Effects of the buffer layer in metalorganic vapor phase epitaxy of gallium mononitride on sapphire substrate Reviewed
H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki
Thin Solid Films Vol. 163 ( 0 ) page： 415-420 1988
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Zinc related electroluminescent properties in MOVPE grown gallium nitride Reviewed
H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki
J. Crystal Growth Vol. 93 ( 0 ) page： 79-82 1988
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High-efficiency blue LED utilizing gallium nitride (GaN) film with an aluminum nitride (AlN) buffer layer grown by MOVPE Reviewed
I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki
Inst. Phys. Conf. Ser. Vol. 91 ( 0 ) page： 633-636 1988
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Crystal growth and properties of gallium nitride and its blue light-emitting diode Reviewed
I. Akasaki, H. Amano, N. Sawaki, M. Hashimoto, Y. Ohki, Y. Toyoda
Jpn Ann. Rev. Elec. Comp. & Telecom. Vol. 19 ( 0 ) page： 295-307 1986
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Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer Reviewed
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda
Appl. Phys. Lett. Vol. 48 ( 0 ) page： 353-355 1986
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Effects of hydrogen in an ambient on the crystal growth of gallium nitride using trimethyl gallium and ammonia Reviewed
M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki
J. Crystal Growth Vol. 68 ( 0 ) page： 163-168 1984