Papers - AMANO, Hiroshi
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Multiple peak spectra from InGaN/GaN multiple quantum wells Reviewed
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 80 ( 0 ) page： 85-89 2000
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InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 77 ( 0 ) page： 1638-1640 2000
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Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 876-878 2000
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Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant Reviewed
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 3388-3390 2000
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Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers Reviewed
Chow W W, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 1647-1649 2000
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Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Reviewed
Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R16318-R16321 2000
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Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R13302-R13305 2000
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Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer Reviewed
Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 31-34 1999
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Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements Reviewed
Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 335-339 1999
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Photoluminescence investigations of AlGaN on GaN epitaxial films Reviewed
Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 187-191 1999
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X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer Reviewed
Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 38 ( 0 ) page： 281-284 1999
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GaN-based MQW light emitting diodes Reviewed
Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 162 ( 0 ) page： 31-35 1999
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Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. Vol. 85 ( 0 ) page： 7682-7688 1999
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Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. Vol. 85 ( 0 ) page： 3786-3791 1999
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Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 4106-4108 1999
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Improvement of far-field pattern in nitride laser diodes Reviewed
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 2960-2962 1999
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Quantum-well width dependence of threshold current density in InGaN lasers Reviewed
Chow W W, Amano H, Takeuchi T, Han J
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 244-246 1999
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Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 356-358 1999
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Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed
Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 3299-3301 1999
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Optical investigations of AlGaN on GaN epitaxial films Reviewed
Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 2456-2458 1999