Papers - AMANO, Hiroshi
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Improvement of far-field pattern in nitride laser diodes Reviewed
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 2960-2962 1999
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Quantum-well width dependence of threshold current density in InGaN lasers Reviewed
Chow W W, Amano H, Takeuchi T, Han J
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 244-246 1999
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Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 356-358 1999
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Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed
Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 3299-3301 1999
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Optical investigations of AlGaN on GaN epitaxial films Reviewed
Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 2456-2458 1999
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Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride Reviewed
Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 60 ( 0 ) page： 1746-1751 1999
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Cooling dynamics of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 59 ( 0 ) page： R7797-R7800 1999
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GaN-based laser diode with focused ion beam-etched mirrors Reviewed
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 59 ( 0 ) page： 382-385 1999
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Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L984-L986 1999
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Strain modification of GaN in AlGaN/GaN epitaxial films Reviewed
Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L498-L500 1999
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Low-intensity ultraviolet photodetectors based on AlGaN Reviewed
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L487-L489 1999
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Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures Reviewed
Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 38 ( 0 ) page： L163-L165 1999
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Microscopic investigation of Al043Ga057N on sapphire Reviewed
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 38 ( 0 ) page： L1515-L1518 1999
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Optical transitions of the Mg acceptor in GaN Reviewed
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 38 ( 0 ) page： L1422-L1424 1999
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L1159-L1162 1999
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy Vol. 2 ( 0 ) page： 693-694 1998
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GaN based laser diode with focused ion beam etched mirrors Reviewed
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L444-L446 1998
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN Reviewed
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L316-L318 1998
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Investigation of the leakage current in GaN p-n junctions Reviewed
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1202-L1204 1998
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Stress and defect control in GaN using low temperature interlayers Reviewed
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1540-L1542 1998