Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 14 ( 6 ) page： 2000142 2020.6

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.

Sandupatla A, Arulkumaran S, Ing NG, Nitta S, Kennedy J, Amano H

Micromachines Vol. 11 ( 5 ) page： 519 2020.5

Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

Lee Hoon, Lee Jung-Hoon, Park Jin-Seong, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 5 ) page： 055001 2020.5

Impact of high-Temperature implantation of Mg ions into GaN

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

Japanese Journal of Applied Physics Vol. 59 ( 5 ) page： 056502 2020.5

Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

Applied Physics Express Vol. 13 ( 5 ) page： 055507 2020.5

Impact of high-temperature implantation of Mg ions into GaN

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) 2020.5

Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 5 ) 2020.5

Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application

Lee Sang-Youl, Kang Kiman, Lee Eunduk, Jo Yoomin, Kim Doyub, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 4 ) page： 045011 2020.4

Experimental observation of high intrinsic thermal conductivity of AlN

Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

PHYSICAL REVIEW MATERIALS Vol. 4 ( 4 ) page： 044602 2020.4

Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi

CRYSTENGCOMM Vol. 22 ( 15 ) page： 2632 - 2641 2020.4

Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Kim Chung Song, Park Sunwoo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

IEEE PHOTONICS TECHNOLOGY LETTERS Vol. 32 ( 7 ) page： 438 - 441 2020.4

Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers

Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka

JOURNAL OF CRYSTAL GROWTH Vol. 535 page： 125522 2020.4

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) page： 1900553 2020.4

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 116 ( 12 ) page： 122101 2020.3

Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package

Kim Ho-Young, Lee Jong-Woo, Jun Duk-Jin, Song Sung-Joo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 3 ) page： 035005 2020.3

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

Microscopy (Oxford, England) Vol. 69 ( 1 ) page： 1-10 2020.3

Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 3 ) page： 036002 2020.2

Using SiO<inf>2</inf>-based distributed Bragg reflector to improve the performance of AlGaInP-based red micro-light emitting diode

Lee S.Y., Moon J.H., Moon Y.T., Choi B., Oh J.T., Jeong H.H., Seong T.Y., Amano H.

ECS Journal of Solid State Science and Technology Vol. 9 ( 3 ) 2020.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：ECS Journal of Solid State Science and Technology

We have investigated how different types of the reflectors affected the optical and electrical performance of AlGaInP-based micro-LEDs. Simulations showed that the AlGaAs-based epitaxial distributed Bragg reflector (DBR) had a stopband at the 610–624 nm region with reflectivity of 90%, the SiO2/TiO2 dielectric DBR gave a stopband at the 580–770 nm range with a maximum reflectivity of 99%, and the ITO/Ag metal reflector exhibited reflectivity of 90% across the 400–800 nm region. All micro-LEDs gave forward voltages of 1.895–1.960 V at 20 μA. The micro-LEDs with the dielectric DBR and metal reflector yielded 31% and 13% higher light output at 20 μA than that with the epitaxial DBR, respectively. All of the micro-LEDs contained a shoulder peak at approximately 615 nm in their electroluminescence spectra. Ray-tracing simulations exhibited that the micro-LEDs with the dielectric DBR and metal reflector produced 26% and 22% higher total light output power than the one with the epitaxial DBR, respectively. It was also shown that for the micro-LEDs with the metal reflector, some of the micro-LEDs were detached from the metal reflectors due to the interfacial voids induced as a result of agglomeration of Ag layer during fabrication process.

DOI： 10.1149/2162-8777/ab74c3/pdf

Scopus

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

MICROELECTRONIC ENGINEERING Vol. 223 page： 111229 2020.2

Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

Lee Da-Hoon, Kang Daesung, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 53 ( 4 ) page： 045106 2020.1

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Papers - AMANO, Hiroshi