Papers - AMANO, Hiroshi
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Mie Resonances, Infrared Emission, and the Band Gap of InN Reviewed
Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B
Physical Review Letters Vol. 92 ( 0 ) page： 117407/1-117407/4 2004
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The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films Reviewed
Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 4923-4925 2004
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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth Reviewed
Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 3417-3419 2004
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Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position Reviewed
Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 5071-5073 2004
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Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection Reviewed
Hiramatsu M, Shiji K, Amano H, Hori M
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 4708-4710 2004
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Reviewed
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 69 ( 0 ) page： 115216/1-115216/5 2004
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3509 nm UV laser diode grown on low-dislocation-density AlGaN Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters & Express Letters Vol. 43 ( 0 ) page： L499-L500 2004
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Study on the seeded growth of AlN bulk crystals by sublimation Reviewed
Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 43 ( 0 ) page： 7448-7453 2004
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Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements Reviewed
Takeda Y, Tabuchi M, Amano H, Akasaki I
Surface Review and Letters Vol. 10 ( 0 ) page： 537-541 2003
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Growth-induced defects in AlN/GaN superlattices with different periods Reviewed
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands Vol. 340-342 ( 0 ) page： 1129-1132 2003
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Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth Vol. 248 ( 0 ) page： 503-506 2003
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Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 240 ( 0 ) page： 356-359 2003
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Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures Reviewed
Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 237 ( 0 ) page： 353-364 2003
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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE Reviewed
Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 585-589 2003
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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Reviewed
Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 502-507 2003
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Violet and UV light-emitting diodes grown on ZrB2 substrate Reviewed
Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 67-70 2003
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Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Reviewed
Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 110-113 2003
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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields Reviewed
Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 523-527 2003
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Group III nitride-based UV light emitting devices Reviewed
Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 491-495 2003
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Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Reviewed
Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 94 ( 0 ) page： 2449-2453 2003