Papers - AMANO, Hiroshi
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Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth Vol. 248 ( 0 ) page： 503-506 2003
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Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 240 ( 0 ) page： 356-359 2003
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Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures Reviewed
Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 237 ( 0 ) page： 353-364 2003
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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE Reviewed
Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 585-589 2003
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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Reviewed
Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 502-507 2003
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Violet and UV light-emitting diodes grown on ZrB2 substrate Reviewed
Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 67-70 2003
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Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Reviewed
Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 110-113 2003
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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields Reviewed
Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 523-527 2003
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Group III nitride-based UV light emitting devices Reviewed
Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 491-495 2003
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Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Reviewed
Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 94 ( 0 ) page： 2449-2453 2003
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Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates Reviewed
Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 93 ( 0 ) page： 1311-1319 2003
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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Reviewed
Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D
Appl. Phys. Lett. Vol. 82 ( 0 ) page： 349-351 2003
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High-power UV-light-emitting diode on sapphire Reviewed
Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 400-403 2003
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ZrB2 substrate for nitride semiconductors Reviewed
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 2260-2264 2003
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Piezoelectric effect in group-III nitride-based heterostructures and quantum wells Reviewed
Takeuchi T, Wetzel C, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 16 ( 0 ) page： 399-438 2003
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1129-1132 2002
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Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum Vol. 389-393 ( 0 ) page： 1493-1496 2002
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MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 968-971 2002
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 951-955 2002
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Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 947-950 2002