Papers - AMANO, Hiroshi
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1582-1584 2008
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1575-1578 2008
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1559-1561 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 151904/1-151904/3 2008
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Photoluminescence from highly excited AlN epitaxial layers. Reviewed
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 131912/1-131912/3 2008
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire Reviewed
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2142-2144 2008
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AlN and AlGaN by MOVPE for UV light emitting devices Reviewed
Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Materials Science Forum Vol. 590 ( 0 ) page： 175-210 2008
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki, Isamu, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 47 ( 0 ) page： 3781 2008
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Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 310 ( 0 ) page： 4996-4998 2008
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Control of stress and crystalline quality in GaInN films used for green emitters Reviewed
Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 310 ( 0 ) page： 4920-4922 2008
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs Reviewed
Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi
Journal of Materials Science: Materials in Electronics Vol. 19 ( 0 ) page： S316-S318 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.
Applied Physics Letters Vol. 92 ( 0 ) page： 151904/1-151904/3 2008
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High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Letters Vol. 93 ( 0 ) page： 182108/1-182108/3 2008
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All MOVPE grown nitride-based LED having sub mm underlying GaN Reviewed
Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3073-3075 2008
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Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE Reviewed
Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Physica Status Solidi C Vol. 5 ( 0 ) page： 3048-3050 2008
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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3045-3047 2008
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InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy Reviewed
Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3023-3025 2008
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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates Reviewed
Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth Vol. 310 ( 0 ) page： 3308-3312 2008
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth Reviewed
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2145-2147 2008
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: Vol. 4 ( 0 ) page： 2211-2214 2007