Papers - AMANO, Hiroshi
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Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2850-2852 2009
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Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Express Vol. 2 ( 0 ) page： 061004/1-061004/3 2009
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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates Reviewed
Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira
J. Crystal Growth Vol. 310 ( 0 ) page： 2308-2313 2008
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN Reviewed
Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 310 ( 0 ) page： 2326-2329 2008
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Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE Reviewed
Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Physica Status Solidi C Vol. 5 ( 0 ) page： 3048-3050 2008
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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3045-3047 2008
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InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy Reviewed
Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3023-3025 2008
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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates Reviewed
Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth Vol. 310 ( 0 ) page： 3308-3312 2008
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth Reviewed
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2145-2147 2008
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire Reviewed
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2142-2144 2008
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. Reviewed
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1906-1909 2008
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1768-1770 2008
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1582-1584 2008
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1575-1578 2008
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1559-1561 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 151904/1-151904/3 2008
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Photoluminescence from highly excited AlN epitaxial layers. Reviewed
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 131912/1-131912/3 2008
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All MOVPE grown nitride-based LED having sub mm underlying GaN Reviewed
Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3073-3075 2008
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AlN and AlGaN by MOVPE for UV light emitting devices Reviewed
Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Materials Science Forum Vol. 590 ( 0 ) page： 175-210 2008
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki, Isamu, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 47 ( 0 ) page： 3781 2008