Papers - AMANO, Hiroshi
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
Applied Physics Express Vol. 2 ( 0 ) page： 041002/1-041002/3 2009
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Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2860-2863 2009
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One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2887-2890 2009
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Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed
Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu
Physica Status Solidic Vol. 6 ( 0 ) page： 1416-1419 2009
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Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2850-2852 2009
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Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Express Vol. 2 ( 0 ) page： 061004/1-061004/3 2009
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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates Reviewed
Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira
J. Crystal Growth Vol. 310 ( 0 ) page： 2308-2313 2008
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN Reviewed
Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 310 ( 0 ) page： 2326-2329 2008
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AlN and AlGaN by MOVPE for UV light emitting devices Reviewed
Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Materials Science Forum Vol. 590 ( 0 ) page： 175-210 2008
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki, Isamu, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 47 ( 0 ) page： 3781 2008
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Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 310 ( 0 ) page： 4996-4998 2008
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Control of stress and crystalline quality in GaInN films used for green emitters Reviewed
Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 310 ( 0 ) page： 4920-4922 2008
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs Reviewed
Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi
Journal of Materials Science: Materials in Electronics Vol. 19 ( 0 ) page： S316-S318 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.
Applied Physics Letters Vol. 92 ( 0 ) page： 151904/1-151904/3 2008
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High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Letters Vol. 93 ( 0 ) page： 182108/1-182108/3 2008
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All MOVPE grown nitride-based LED having sub mm underlying GaN Reviewed
Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3073-3075 2008
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Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE Reviewed
Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Physica Status Solidi C Vol. 5 ( 0 ) page： 3048-3050 2008
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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3045-3047 2008
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InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy Reviewed
Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 3023-3025 2008
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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates Reviewed
Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth Vol. 310 ( 0 ) page： 3308-3312 2008