Papers - AMANO, Hiroshi
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page: 1768-1770 2008
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C Vol. 5 ( 0 ) page: 1582-1584 2008
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page: 1575-1578 2008
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page: 1559-1561 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 92 ( 0 ) page: 151904/1-151904/3 2008
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Photoluminescence from highly excited AlN epitaxial layers. Reviewed
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. Vol. 92 ( 0 ) page: 131912/1-131912/3 2008
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: Vol. 4 ( 0 ) page: 2211-2214 2007
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Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. Reviewed
Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page: 5782-5784 2007
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Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy Reviewed
Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page: L307-L310 2007
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Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page: 1458-1462 2007
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Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page: 115-118 2007
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology Vol. 18 ( 0 ) page: 025401/1-025401/6 2007
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Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page: 2708-2711 2007
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page: 2528-2531 2007
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Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page: 2502-2505 2007
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Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page: 2272-2276 2007
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Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Reviewed
Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.
Philosophical Magazine Vol. 87 ( 0 ) page: 2019-2039 2007
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates Reviewed
Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 91 ( 0 ) page: 221901/1-221901/3 2007
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Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates Reviewed
Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.
Physica B Vol. 401-402 ( 0 ) page: 302-306 2007
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page: L948-L950 2007