Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

Journal of Crystal Growth Vol. 312 ( 21 ) page： 3131-3135. 2010.6

Language：English Publishing type：Research paper (scientific journal)

The elec. and optical properties of Mg-doped a- and c-plane GaN films grown by MOVPE were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concns. are above 1 × 1020 cm-3 and 5 × 1019 cm-3, resp. The elec. properties also indicate the existence of compensating donors because the hole concn. decreases at such high Mg doping concns. In addn., we estd. the ND/NA compensation ratio of a- and c-plane GaN by variable-temp. Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.

DOI： 10.1016/j.jcrysgro.2010.07.038

Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO Reviewed

Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

Applied Physics Letters Vol. 96 ( ７ ) page： 071909/1-071909/3 2010.3

Language：English Publishing type：Research paper (scientific journal)

The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium content in the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes. For indium content below 0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[11-20] are obsd. parallel to the [0001] direction. For indium content above 0.12, generation of basal-plane stacking faults relieve the compressive stress along the 0001 direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

DOI： 10.1063/1.3315944

Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Diamond and Related Materials Vol. 19 ( 0 ) page： 131-133 2010.2

Language：English Publishing type：Research paper (scientific journal)

We investigate the microstructures of domain boundaries in an AlN layer grown on a (001) diamond substrate by metal-org. vapor phase epitaxy. The AlN layer has a two-domain structure with crystal orientation along either <112-0> AlN [named by AlNI domain] or <101-0> AlN [named by AlNII domain] parallel to [110] direction of diamond. The AlNI and AlNII domains are not atomically bonded at two-domain boundary from initial to final step of growth, while an edge-type dislocation is generated at single-domain boundary (SDB). In addn., an inversion AlNI domain [named by AlNI*] is randomly-ordered at the initial stage of the coalescence between the AlNI domains. The AlNI* is easily terminated with increasing the thickness of AlNI domain. The inversion domain boundary changes to the edge-type dislocation at the SDB with further growth, which reduces the defect d. in the AlNI domains.

DOI： 10.1016/j.diamond.2009.08.004

High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient Reviewed

Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Physica Status Solidi A: Vol. 207 ( 0 ) page： 1393-1396 2010

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

Journal of Crystal Growth Vol. 312 ( 21 ) page： 3131-3135 2010

Defects in highly Mg-doped AlN Reviewed

Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Physica Status Solidi A Vol. 207 ( 0 ) page： 1299-1301 2010

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Journal of Crystal Growth Vol. 312 ( 0 ) page： 368-372 2010

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Journal of Crystal Growth Vol. 312 ( 0 ) page： 1325-1328 2010

P-type doping and defect generation in Group III nitride semiconductors Invited Reviewed Open Access

Amano, Hiroshi; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

Nippon Kessho Seicho Gakkaishi Vol. 36 ( 3 ) page： 200-204 2009.3

Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed

Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

Journal of Applied Physics Vol. 105 ( 0 ) page： 083533/1-083533/6 2009

Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed

Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2926-2928 2009

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed

Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

Physica Status Solidi A Vol. 206 ( 0 ) page： 1199-1204 2009

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed

Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2929-2932 2009

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed

Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

Applied Physics Express Vol. 2 ( 0 ) page： 041002/1-041002/3 2009

Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed

Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2860-2863 2009

One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed

Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2887-2890 2009

Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed

Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu

Physica Status Solidic Vol. 6 ( 0 ) page： 1416-1419 2009

Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed

Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2850-2852 2009

Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed

Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Applied Physics Express Vol. 2 ( 0 ) page： 061004/1-061004/3 2009

Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed Open Access

Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

Opto-Electronics Review Vol. 17 ( 0 ) page： 293-299 2009

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Papers - AMANO, Hiroshi