Papers - AMANO, Hiroshi
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Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates Reviewed
Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 93 ( 0 ) page： 1311-1319 2003
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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Reviewed
Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D
Appl. Phys. Lett. Vol. 82 ( 0 ) page： 349-351 2003
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High-power UV-light-emitting diode on sapphire Reviewed
Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 400-403 2003
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ZrB2 substrate for nitride semiconductors Reviewed
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 2260-2264 2003
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Piezoelectric effect in group-III nitride-based heterostructures and quantum wells Reviewed
Takeuchi T, Wetzel C, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 16 ( 0 ) page： 399-438 2003
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1129-1132 2002
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Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum Vol. 389-393 ( 0 ) page： 1493-1496 2002
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MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 968-971 2002
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 951-955 2002
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Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 947-950 2002
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Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1139-1142 2002
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Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1133-1138 2002
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Electric fields in polarized GaInN/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 14 ( 0 ) page： 219-258 2002
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Annihilation of threading dislocations in GaN/AlGaN Reviewed
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 366-370 2002
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UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 296-300 2002
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 21-26 2002
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 161-166 2002
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates Reviewed
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 107-111 2002
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 813-817 2002
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 713-718 2002