Papers - AMANO, Hiroshi
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The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films Reviewed
Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 4923-4925 2004
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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth Reviewed
Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 3417-3419 2004
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Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position Reviewed
Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 5071-5073 2004
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Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection Reviewed
Hiramatsu M, Shiji K, Amano H, Hori M
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 4708-4710 2004
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Reviewed
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 69 ( 0 ) page： 115216/1-115216/5 2004
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3509 nm UV laser diode grown on low-dislocation-density AlGaN Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters & Express Letters Vol. 43 ( 0 ) page： L499-L500 2004
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Study on the seeded growth of AlN bulk crystals by sublimation Reviewed
Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 43 ( 0 ) page： 7448-7453 2004
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Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements Reviewed
Takeda Y, Tabuchi M, Amano H, Akasaki I
Surface Review and Letters Vol. 10 ( 0 ) page： 537-541 2003
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Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Reviewed
Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 110-113 2003
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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields Reviewed
Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 523-527 2003
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Group III nitride-based UV light emitting devices Reviewed
Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I
Physica Status Solidi A: Applied Research Vol. 195 ( 0 ) page： 491-495 2003
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Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Reviewed
Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 94 ( 0 ) page： 2449-2453 2003
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Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates Reviewed
Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 93 ( 0 ) page： 1311-1319 2003
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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Reviewed
Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D
Appl. Phys. Lett. Vol. 82 ( 0 ) page： 349-351 2003
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High-power UV-light-emitting diode on sapphire Reviewed
Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 400-403 2003
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ZrB2 substrate for nitride semiconductors Reviewed
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 42 ( 0 ) page： 2260-2264 2003
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Piezoelectric effect in group-III nitride-based heterostructures and quantum wells Reviewed
Takeuchi T, Wetzel C, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 16 ( 0 ) page： 399-438 2003
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Violet and UV light-emitting diodes grown on ZrB2 substrate Reviewed
Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 200 ( 0 ) page： 67-70 2003
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Growth-induced defects in AlN/GaN superlattices with different periods Reviewed
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands Vol. 340-342 ( 0 ) page： 1129-1132 2003
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Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth Vol. 248 ( 0 ) page： 503-506 2003