Papers - AMANO, Hiroshi
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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed
Haratizadeh Hamid, Monemar Bo, Amano Hiroshi
Physica Status Solidi A Vol. 203 ( 0 ) page： 149-153 2006
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Reviewed
Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.
J. Apl. Phys. Vol. 99 ( 0 ) page： 093108/1-093108/4 2006
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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Appl. Phys. Lett. Vol. 89 ( 0 ) page： 221901/1-221901/2 2006
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Photoluminescence of GaN/AlN superlattices grown by MOCVD Reviewed
PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki
Physica Status Solidi C: Current Topics in Solid State Physics Vol. 2 ( 0 ) page： pp2345-2348 2005
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Optical properties of InN related to surface plasmons Reviewed
Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V
Physica Status Solidi A Vol. 202 ( 0 ) page： 2633-2641 2005
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CBED study of grain misorientations in AlGaN epilayers Reviewed
Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I
Ultramicroscopy Vol. 103 ( 0 ) page： 23-32 2005
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Phonon mode behavior in strained wurtzite AlN/GaN superlattices Reviewed
Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I
Physical Review B Vol. 71 ( 0 ) page： 115329/1-115329/9 2005
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High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition Reviewed
Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： L693-L695 2005
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Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate Reviewed
Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： L1516-L1518 2005
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Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate Reviewed
Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 7418-7420 2005
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High-efficiency nitride-based light-emitting diodes with moth-eye structure Reviewed
Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 7414-7417 2005
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Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer Reviewed
Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 3913-3917 2005
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Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition Reviewed
Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M
Diamond and Related Materials Vol. 14 ( 0 ) page： 831-834 2005
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UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology Reviewed
Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
IEEE Journal of Selected Topics in Quantum Electronics Vol. 11 ( 0 ) page： 1069-1073 2005
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Free-to-bound radiative recombination in highly conducting InN epitaxial layers Reviewed
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Superlattices and Microstructures Vol. 36 ( 0 ) page： 563-571 2004
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High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE Reviewed
Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 272 ( 0 ) page： 377-380 2004
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Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 272 ( 0 ) page： 270-273 2004
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Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells Reviewed
Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 241 ( 0 ) page： 1124-1133 2004
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Defect and stress control of AlGaN for fabrication of high performance UV light emitters Reviewed
Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D
Physica Status Solidi A: Applied Research Vol. 201 ( 0 ) page： 2679-2685 2004
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Optical investigation of AlGaN/GaN quantum wells and superlattices Reviewed
Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 201 ( 0 ) page： 2251-2258 2004