Papers - AMANO, Hiroshi
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High-efficiency nitride-based light-emitting diodes with moth-eye structure Reviewed
Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 7414-7417 2005
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Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer Reviewed
Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 3913-3917 2005
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Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition Reviewed
Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M
Diamond and Related Materials Vol. 14 ( 0 ) page： 831-834 2005
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UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology Reviewed
Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
IEEE Journal of Selected Topics in Quantum Electronics Vol. 11 ( 0 ) page： 1069-1073 2005
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Free-to-bound radiative recombination in highly conducting InN epitaxial layers Reviewed
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Superlattices and Microstructures Vol. 36 ( 0 ) page： 563-571 2004
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High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE Reviewed
Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 272 ( 0 ) page： 377-380 2004
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Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 272 ( 0 ) page： 270-273 2004
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Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells Reviewed
Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 241 ( 0 ) page： 1124-1133 2004
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Defect and stress control of AlGaN for fabrication of high performance UV light emitters Reviewed
Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D
Physica Status Solidi A: Applied Research Vol. 201 ( 0 ) page： 2679-2685 2004
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Optical investigation of AlGaN/GaN quantum wells and superlattices Reviewed
Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 201 ( 0 ) page： 2251-2258 2004
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Mie Resonances, Infrared Emission, and the Band Gap of InN Reviewed
Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B
Physical Review Letters Vol. 92 ( 0 ) page： 117407/1-117407/4 2004
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The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films Reviewed
Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 4923-4925 2004
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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth Reviewed
Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 85 ( 0 ) page： 3417-3419 2004
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Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position Reviewed
Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 5071-5073 2004
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Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection Reviewed
Hiramatsu M, Shiji K, Amano H, Hori M
Appl. Phys. Lett. Vol. 84 ( 0 ) page： 4708-4710 2004
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Reviewed
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 69 ( 0 ) page： 115216/1-115216/5 2004
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3509 nm UV laser diode grown on low-dislocation-density AlGaN Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters & Express Letters Vol. 43 ( 0 ) page： L499-L500 2004
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Study on the seeded growth of AlN bulk crystals by sublimation Reviewed
Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 43 ( 0 ) page： 7448-7453 2004
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Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements Reviewed
Takeda Y, Tabuchi M, Amano H, Akasaki I
Surface Review and Letters Vol. 10 ( 0 ) page： 537-541 2003
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Growth-induced defects in AlN/GaN superlattices with different periods Reviewed
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands Vol. 340-342 ( 0 ) page： 1129-1132 2003