Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes

Lee Sang-Youl, Han Dae-Seob, Lee Yong-Gyeong, Choi Kwang-Ki, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 6 ) page： 065016 2020.1

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 1 ) page： 010906 2020.1

Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum Open Access

Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics Vol. 38 ( 1 ) page： 012603 2020.1

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS Vol. 7 ( 1 ) page： 015004 2020.1

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Zheng Ye, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

Japanese Journal of Applied Physics Vol. 59 ( 2 ) page： 025511 2020

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN Open Access

Duc V Dinh, Nan Hu, Yoshio Honda, Hiroshi Amano, Markus Pristovsek

Semiconductor Science and Technology Vol. 35 ( 3 ) page： 035004 2020

Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki

Ren Fan, Mishra Kailash C., Amano Hiroshi, Collins John, Han Jung, Im Won Bin, Kneissl Michael, Seong Tae-Yeon, Setlur Anant, Suski Tadek, Zych Eugeniusz

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 1 ) page： 010001 2020

Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

Lee Sang-Youl, Lee Eunduk, Moon Ji-Hyung, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

IEEE PHOTONICS TECHNOLOGY LETTERS Vol. 32 ( 17 ) page： 1041 - 1044 2020

Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

Journal of the Japanese Association for Crystal Growth Vol. 47 ( 3 ) page： n/a 2020

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japanese Association for Crystal Growth

<p> The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

DOI： 10.19009/jjacg.47-3-04

CiNii Research

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

GALLIUM NITRIDE MATERIALS AND DEVICES XV Vol. 11280 page： 1128015 2020

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) 2020

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) Vol. 2020-September page： 349 - 352 2020

Development of laser slicing technology for GaN substrates Open Access

KAWAGUCHI Daisuke, TANAKA Atsushi, YUI Toshiki, IGASAKI Yasunori, WANI Yotaro, AMANO Hiroshi

The Proceedings of Mechanical Engineering Congress, Japan Vol. 2020 ( 0 ) page： S16306 2020

UV-C Laser Diodes Fabricated on High Quality AlN Substrate Open Access

SASAOKA Chiaki, AMANO Hiroshi

The Review of Laser Engineering Vol. 48 ( 8 ) page： 427 2020

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Laser Society of Japan

A UV-C laser diode is a promising light source for processing and machining applications due to photon
energy near 5 eV. Recently, our group reported a 272-nm laser diode (LD) fabricated on a high-quality
AlN substrate. Several key technologies are involved to achieve lasing; a low-dislocation-density AlN
substrate to reduce waveguide optical loss, and distributed polarization doping to increase the hole density
in the p-side AlGaN cladding of high Al composition. After introducing these key technologies, we
describe a highly productive on-wafer laser fabrication process in which a facet mirror is prepared by
dry- and wet-etching and coated with atomic layer deposited DBR (Distributed Bragg Reflector). These
technologies are expected to open up new UV-C applications and be widely implemented around the
world.

DOI： 10.2184/lsj.48.8_427

Open Access

CiNii Research

Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad Open Access

Kim Jong-Ho, Lee Yong Won, Im Hyeong-Seop, Oh Chan-Hyoung, Shim Jong-In, Kang Daesung, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 1 ) page： 015021 2019.12

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

JOURNAL OF APPLIED PHYSICS Vol. 126 ( 21 ) page： 215703 2019.12

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 page： 1900554 2019.12

A 271.8 nm deep-ultraviolet laser diode for room temperature operation Open Access

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 12 ) page： 124003 2019.12

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 34 ( 12 ) page： 125012 2019.12

Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency Open Access

Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

SENSORS Vol. 19 ( 23 ) page： 5107 2019.12

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Papers - AMANO, Hiroshi