Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

Division display 221 - 240 of about 851 ／ All the affair displays >>

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 34 ( 12 ) page： 125012 2019.12

Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

SENSORS Vol. 19 ( 23 ) page： 5107 2019.12

Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure

Kim Ho-Young, Lee Jong Woo, Moon Young Min, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 9 ( 1 ) page： 015014 2019.11

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SCIENTIFIC REPORTS Vol. 9 page： 15802 2019.11

Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

Kang Daesung, Oh Jeong-Tak, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 10 ) page： 102016 2019.10

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES Vol. 9 ( 9 ) page： 095002 2019.9

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

MICROELECTRONICS RELIABILITY Vol. 100 page： 113418 2019.9

Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

Kim Ho Young, Lim Chang Man, Kim Ki Seok, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 8 ( 9 ) page： Q165 - Q170 2019.8

Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

Kim Dae-Hyun, Park Young Soo, Kang Daesung, Kim Kyoung-Kook, Seong Tae-Yeon, Amano Hiroshi

JOURNAL OF ALLOYS AND COMPOUNDS Vol. 796 page： 146-152 2019.8

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

MATERIALS Vol. 12 ( 16 ) page： 2583 2019.8

Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth

Park Jeong-Hwan, Lee Jun-Yeob, Park Mun-Do, Min Jung-Hong, Lee Je-Sung, Yang Xu, Kang Seokjin, Kim Sang-Jo, Jeong Woo-Lim, Amano Hiroshi, Lee Dong-Seon

ADVANCED MATERIALS INTERFACES Vol. 6 page： 1900821 2019.7

Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

Takahashi Kazuya, Shinoda Ryoji, Mitsufuji Syun, Iwaya Motoaki, Kamiyama Satoshi, Takeuchi Tetsuya, Hattori Tomokazu, Akasaki Isamu, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 7 ) page： 072003 2019.7

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 7 ) page： 075502 2019.7

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 516 page： 63-66 2019.6

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 114 ( 23 ) page： 232105 2019.6

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SC1055 2019.6

Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCC06 2019.6

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCD20 2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCD25 2019.6

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCB24 2019.6

　 PREV - NEXT 　

<AMANO, Hiroshi>

Papers - AMANO, Hiroshi