Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed

Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics Vol. 55 page： 082101/1-7 2016.8

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy Reviewed

Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

PHYSICAL REVIEW Vol. B94 page： 045206/1-8 2016.7

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Reviewed

Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Vol. 55 ( 5S ) page： 05FL03/1-5 2016.5

Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed

Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FH05/1-4 2016.5

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics Vol. 55 page： 05FJ02/1-3 2016.5

Language：English Publishing type：Research paper (scientific journal)

Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

DOI： 10.7567/JJAP.55.05FJ02

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed Open Access

Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

Nanoscale Research Letters Vol. 11 2016.4

Language：English Publishing type：Research paper (scientific journal)

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

DOI： 10.1186/s11671-016-1441-6

Open Access

Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed

Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics, Vol. 55 ( 5S ) page： 05FB06/1-5 2016.4

Growth of semipolar (1-101) high-indium-content InGaN quantum well using InGaN tilting layer on Si(001) Reviewed

Maki Kushimoto, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FA10/1-4 2016.4

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FD03/1-4 2016.4

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

Hiroshi Amano

Progress in Crystal Growth and Characterization of Materials Vol. 62 page： 126–135 2016.4

Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

Vol. 55 ( 5S ) page： 05FG03/1-8 2016.4

Language：English Publishing type：Research paper (scientific journal)

We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed

Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 page： 05FF03/1-5 2016.3

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FM01/1-4 2016.2

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

Japanese Journal of Applied Physics Rapid Communications Vol. 55 ( 3 ) page： 030306/1-4 2016.2

Language：English Publishing type：Research paper (scientific journal)

Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

DOI： 10.7567/JJAP.55.030306

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed

Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 49 ( 2 ) page： 025103 2016.1

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

CrystEngComm Vol. 18 page： 1505-1514 2016.1

Language：English Publishing type：Research paper (scientific journal)

. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision.

DOI： 10.1039/C5CE02056E

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer Reviewed

Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 page： 010303/1-3 2016.1

Language：English Publishing type：Research paper (scientific journal)

Previously, we reported a growth method by MOVPE using a single two-dimensional growth step, resulting in 1.2-micron thick crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate.

DOI： 10.7567/JJAP.55.010303

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Invited Reviewed

Hiroshi Amano

Rev. Mod. Phys. Vol. 87 ( 4 ) page： 1133-1138 2015.12

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

This is a personal history of one of the Japanese researchers engaged in developing a method for
growing GaN on a sapphire substrate, paving the way for the realization of smart television and
display systems using blue LEDs. The most important work was done in the mid to late 1980s. The
background to the author's work and the process by which the technology enabling the growth of
GaN and the realization of p-type GaN was established are reviewed.

DOI： 10.1142/S0217979215300157

Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer Reviewed

Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 431 page： 60-63 2015.12

Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals Reviewed Open Access

M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

Superlattices and Microstructures Vol. 87 page： 38-41 2015.11

Language：English Publishing type：Research paper (scientific journal)

Dynamic properties are studied for the AlGaN/GaN quantum well (QW) structures with and without the coating of colloidal ZnO nanocrystals (NCs). The QW exciton recombination rate was reduced in such hybrids compared to the bare QW structure only in the sample with the thinnest cap layer of 3 nm. Assuming that one of the recombination mechanisms in this hybrid is non-radiative resonant energy transfer (NRET) between the QW and the energy acceptor material i.e. ZnO NCs, the maximum pumping efficiency was estimated to be 0.42 at 60 K. The NRET effect is, however, vanished after several months despite that the hybrid structures are composed of chemically stable components.

DOI： doi:10.1016/j.spmi.2015.07.017

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Papers - AMANO, Hiroshi