Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Open Access

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) page： 026502 2019.2

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

Zeghouane Mohammed, Avit Geoffrey, Andre Yamina, Bougerol Catherine, Robin Yoann, Ferret Pierre, Castelluci Dominique, Gil Evelyne, Dubrovskii Vladimir G., Amano Hiroshi, Trassoudaine Agnes

NANOTECHNOLOGY Vol. 30 ( 4 ) page： 044001 2019.1

Localization and transient emission properties in InGaN/ GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE Vol. 11 ( 1 ) page： 193 - 199 2019.1

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S. F.

APPLIED PHYSICS LETTERS Vol. 114 ( 1 ) page： 011102 2019.1

286 nm monolithic multicomponent system

Yuan Jialei, Jiang Yan, Shi Zheng, Gao Xumin, Wang Yongjin, Sun Xiaojuan, Li Dabing, Liu Yuhuai, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 1 ) page： 010909 2019.1

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page： . 2019

Light-Emitting Diodes Materials, Processes, Devices and Applications Foreword

Amano, H

LIGHT-EMITTING DIODES: MATERIALS, PROCESSES, DEVICES AND APPLICATIONS Vol. 4 page： V - V 2019

MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire Open Access

Dinh Duc V., Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 502 page： 14-18 2018.11

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs Open Access

Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

JOURNAL OF APPLIED PHYSICS Vol. 124 ( 18 ) page： 183102 2018.11

Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 215 ( 21 ) page： 1800361 2018.11

Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 36 ( 6 ) page： 06JK02 2018.11

Full-duplex light communication with a monolithic multicomponent system Open Access

Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

LIGHT-SCIENCE & APPLICATIONS Vol. 7 page： 83 2018.10

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

CRYSTENGCOMM Vol. 20 ( 40 ) page： 6207 - 6213 2018.10

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 10 ) page： 105501 2018.10

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Open Access

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 498 page： 377-380 2018.9

Advantages of GaN and Related Materials over Si and Issues to be Solved

AMANO Hiroshi

Vacuum and Surface Science Vol. 61 ( 9 ) page： 565 - 567 2018.9

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 9 ) page： 091001 2018.9

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 12 ( 8 ) page： 1800124 2018.8

Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) page： 070302 2018.7

Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

Physica Status Solidi (A) Applications and Materials Science Vol. 215 ( 10 ) page： 1700525 2018.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Wiley-VCH Verlag

The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

DOI： 10.1002/pssa.201700525

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Papers - AMANO, Hiroshi