Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Light-Emitting Diodes Materials, Processes, Devices and Applications Foreword

Amano, H

LIGHT-EMITTING DIODES: MATERIALS, PROCESSES, DEVICES AND APPLICATIONS Vol. 4 page： V - V 2019

MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire Open Access

Dinh Duc V., Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 502 page： 14-18 2018.11

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs Open Access

Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

JOURNAL OF APPLIED PHYSICS Vol. 124 ( 18 ) page： 183102 2018.11

Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 215 ( 21 ) page： 1800361 2018.11

Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 36 ( 6 ) page： 06JK02 2018.11

Full-duplex light communication with a monolithic multicomponent system Open Access

Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

LIGHT-SCIENCE & APPLICATIONS Vol. 7 page： 83 2018.10

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

CRYSTENGCOMM Vol. 20 ( 40 ) page： 6207 - 6213 2018.10

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 10 ) page： 105501 2018.10

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Open Access

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 498 page： 377-380 2018.9

Advantages of GaN and Related Materials over Si and Issues to be Solved

AMANO Hiroshi

Vacuum and Surface Science Vol. 61 ( 9 ) page： 565 - 567 2018.9

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 9 ) page： 091001 2018.9

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 12 ( 8 ) page： 1800124 2018.8

Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) page： 070302 2018.7

Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

Physica Status Solidi (A) Applications and Materials Science Vol. 215 ( 10 ) page： 1700525 2018.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Wiley-VCH Verlag

The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

DOI： 10.1002/pssa.201700525

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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Open Access

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS Vol. 8 page： 7311 2018.5

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Open Access

Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

Physica Status Solidi (A) Applications and Materials Science Vol. 215 ( 9 ) page： 1700645 2018.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Wiley-VCH Verlag

In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

DOI： 10.1002/pssa.201700645

Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics Open Access

Chuan Qin, Xumin Gao, Jialei Yuan, Zheng Shi, Yuan Jiang, Yuhuai Liu, Yongjin Wang, Hiroshi Amano

Applied Physics Express Vol. 11 ( 5 ) page： 051201 2018.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

DOI： 10.7567/APEX.11.051201

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy Open Access

Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Kentaro Nagamatsu, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Applied Physics Express Vol. 11 ( 5 ) page： 051002 2018.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

DOI： 10.7567/APEX.11.051002

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

APPLIED PHYSICS LETTERS Vol. 112 ( 18 ) page： 182106 2018.4

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

DOI： 10.1063/1.5024704

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Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures Open Access

Oh Jeong-Tak, Lee Sang-Youl, Moon Yong-Tae, Moon Ji Hyung, Park Sunwoo, Hong Ki Yong, Song Ki Young, Oh Chan-Hyoung, Shim Jong-In, Jeong Hwan-Hee, Song June-O, Amano Hiroshi, Seong Tae-Yeon

OPTICS EXPRESS Vol. 26 ( 9 ) page： 11194-11200 2018.4

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Papers - AMANO, Hiroshi