Papers - AMANO, Hiroshi
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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed
Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.
Thin Solid Films Vol. 515 ( 0 ) page： 768-770 2006
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X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi B Vol. 243 ( 0 ) page： 1524-1528 2006
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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed
Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A Vol. 203 ( 0 ) page： 1632-1635 2006
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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi A Vol. 203 ( 0 ) page： 1626-1631 2006
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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed
Haratizadeh Hamid, Monemar Bo, Amano Hiroshi
Physica Status Solidi A Vol. 203 ( 0 ) page： 149-153 2006
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Reviewed
Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.
J. Apl. Phys. Vol. 99 ( 0 ) page： 093108/1-093108/4 2006
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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Appl. Phys. Lett. Vol. 89 ( 0 ) page： 221901/1-221901/2 2006
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Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact Reviewed
Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： L319-L321 2006
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High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： L1048-L1050 2006
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki Isamu, Amano Hiroshi.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 9001-9010 2006
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High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 8639-8643 2006
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Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2509-2513 2006
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Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy Reviewed
Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2502-2504 2006
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Photoluminescence of GaN/AlN superlattices grown by MOCVD Reviewed
PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki
Physica Status Solidi C: Current Topics in Solid State Physics Vol. 2 ( 0 ) page： pp2345-2348 2005
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Optical properties of InN related to surface plasmons Reviewed
Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V
Physica Status Solidi A Vol. 202 ( 0 ) page： 2633-2641 2005
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CBED study of grain misorientations in AlGaN epilayers Reviewed
Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I
Ultramicroscopy Vol. 103 ( 0 ) page： 23-32 2005
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Phonon mode behavior in strained wurtzite AlN/GaN superlattices Reviewed
Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I
Physical Review B Vol. 71 ( 0 ) page： 115329/1-115329/9 2005
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High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition Reviewed
Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： L693-L695 2005
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Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate Reviewed
Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： L1516-L1518 2005
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Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate Reviewed
Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 44 ( 0 ) page： 7418-7420 2005