Papers - AMANO, Hiroshi
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page： 491-495 2006
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
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6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed
Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.
Materials Science Forum Vol. 527 ( 0 ) page： 263-266 2006
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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed
Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.
Thin Solid Films Vol. 515 ( 0 ) page： 768-770 2006
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X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi B Vol. 243 ( 0 ) page： 1524-1528 2006
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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed
Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A Vol. 203 ( 0 ) page： 1632-1635 2006
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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi A Vol. 203 ( 0 ) page： 1626-1631 2006
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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed
Haratizadeh Hamid, Monemar Bo, Amano Hiroshi
Physica Status Solidi A Vol. 203 ( 0 ) page： 149-153 2006
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Reviewed
Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.
J. Apl. Phys. Vol. 99 ( 0 ) page： 093108/1-093108/4 2006
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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Appl. Phys. Lett. Vol. 89 ( 0 ) page： 221901/1-221901/2 2006
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Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact Reviewed
Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： L319-L321 2006
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High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： L1048-L1050 2006
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki Isamu, Amano Hiroshi.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 9001-9010 2006
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High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 8639-8643 2006
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Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2509-2513 2006
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Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy Reviewed
Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2502-2504 2006
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Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells Reviewed
Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.
Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu Vol. 5 ( 0 ) page： 73-77 2006
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Reviewed
Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O
Nature Materials Vol. 5 ( 0 ) page： 810-816 2006
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Growth of high-quality AlN at high growth rate by high-temperature MOVPE Reviewed
Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1617-1619 2006