Papers - AMANO, Hiroshi
-
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology Vol. 18 ( 0 ) page： 025401/1-025401/6 2007
-
Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2708-2711 2007
-
Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2528-2531 2007
-
Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2502-2505 2007
-
Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2272-2276 2007
-
Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page： 288-292 2007
-
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates Reviewed
Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 91 ( 0 ) page： 221901/1-221901/3 2007
-
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates Reviewed
Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.
Physica B Vol. 401-402 ( 0 ) page： 302-306 2007
-
Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： L948-L950 2007
-
Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. Reviewed
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum Vol. 556-557 ( 0 ) page： 335-338 2007
-
Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Reviewed
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page： 349-353 2007
-
Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed
Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1392-1395 2006
-
A hydrogen-related shallow donor in GaN? Reviewed
Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page： 460-463 2006
-
Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
-
Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page： 491-495 2006
-
Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
-
6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed
Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.
Materials Science Forum Vol. 527 ( 0 ) page： 263-266 2006
-
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed
Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.
Thin Solid Films Vol. 515 ( 0 ) page： 768-770 2006
-
X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi B Vol. 243 ( 0 ) page： 1524-1528 2006
-
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed
Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A Vol. 203 ( 0 ) page： 1632-1635 2006