Papers - AMANO, Hiroshi
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth Reviewed
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2145-2147 2008
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire Reviewed
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 2142-2144 2008
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. Reviewed
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1906-1909 2008
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1768-1770 2008
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1582-1584 2008
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1575-1578 2008
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1559-1561 2008
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 151904/1-151904/3 2008
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Photoluminescence from highly excited AlN epitaxial layers. Reviewed
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. Vol. 92 ( 0 ) page： 131912/1-131912/3 2008
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: Vol. 4 ( 0 ) page： 2211-2214 2007
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： L948-L950 2007
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Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. Reviewed
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum Vol. 556-557 ( 0 ) page： 335-338 2007
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Reviewed
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page： 349-353 2007
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Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page： 288-292 2007
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE Reviewed
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 300 ( 0 ) page： 141-144 2007
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio Reviewed
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 300 ( 0 ) page： 136-140 2007
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page： 265-267 2007
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Reviewed
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page： 261-264 2007
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Reviewed
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page： 257-260 2007
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Reviewed
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page： 215-218 2007