Papers - AMANO, Hiroshi
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Radiative recombination in (In,Ga)N/GaN multiple quantum wells Reviewed
Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I
Materials Science Forum Vol. 338-342 ( 0 ) page： 1571-1574 2000
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Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method Reviewed
Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 432-440 2000
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Mass transport and the reduction of threading dislocation in GaN Reviewed
Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 421-426 2000
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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 414-420 2000
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Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer Reviewed
Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 405-413 2000
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Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas Reviewed
Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
J. Crystal Growth Vol. 221 ( 0 ) page： 327-333 2000
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Structural characterization of Al1-xInxN lattice-matched to GaN Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 209 ( 0 ) page： 419-423 2000
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Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells Reviewed
Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 39 ( 0 ) page： 413-416 2000
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Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer Reviewed
Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 39 ( 0 ) page： 390-392 2000
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Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design Reviewed
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 39 ( 0 ) page： 2425-2427 2000
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The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 39 ( 0 ) page： 2385-2388 2000
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Gain-switching of GaInN multiquantum well laser diodes Reviewed
Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T
Electronics Letters Vol. 36 ( 0 ) page： 83-84 2000
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Nitride-based laser diodes using thick n-AlGaN layers Reviewed
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N
Journal of Electronic Materials Vol. 29 ( 0 ) page： 302-305 2000
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Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices Reviewed
Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Journal of Electronic Materials Vol. 29 ( 0 ) page： 252-255 2000
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Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method Reviewed
Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku Vol. 21 ( 0 ) page： 162-168 2000
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Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire Reviewed
Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku Vol. 21 ( 0 ) page： 126-133 2000
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Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 39 ( 0 ) page： L143-L145 2000
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Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series Vol. 166 ( 0 ) page： 471-474 2000
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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. Vol. 88 ( 0 ) page： 2677-2681 2000
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Multiple peak spectra from InGaN/GaN multiple quantum wells Reviewed
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 80 ( 0 ) page： 85-89 2000