Papers - AMANO, Hiroshi
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Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride Reviewed
Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 60 ( 0 ) page： 1746-1751 1999
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Cooling dynamics of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 59 ( 0 ) page： R7797-R7800 1999
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GaN-based laser diode with focused ion beam-etched mirrors Reviewed
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 59 ( 0 ) page： 382-385 1999
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Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L984-L986 1999
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Strain modification of GaN in AlGaN/GaN epitaxial films Reviewed
Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L498-L500 1999
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Low-intensity ultraviolet photodetectors based on AlGaN Reviewed
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L487-L489 1999
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Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures Reviewed
Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 38 ( 0 ) page： L163-L165 1999
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Microscopic investigation of Al043Ga057N on sapphire Reviewed
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 38 ( 0 ) page： L1515-L1518 1999
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Optical transitions of the Mg acceptor in GaN Reviewed
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 38 ( 0 ) page： L1422-L1424 1999
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L1159-L1162 1999
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Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers Reviewed
Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 137-140 1999
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Correlation of vibrational modes and DX-like centers in GaN:O Reviewed
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 109-112 1999
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 43-45 1999
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Energy loss rate of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 272 ( 0 ) page： 409-411 1999
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Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer Reviewed
Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 683-689 1999
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Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells Reviewed
Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 399-403 1999
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Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density Reviewed
Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 147-151 1999
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy Vol. 2 ( 0 ) page： 693-694 1998
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 758-762 1998
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Room-temperature photoluminescence linewidth versus material quality of GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1319-1322 1998