Papers - AMANO, Hiroshi
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L1159-L1162 1999
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy Vol. 2 ( 0 ) page： 693-694 1998
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Photoluminescence of GaN: Effect of electron irradiation Reviewed
Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 2968-2970 1998
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Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect Reviewed
Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 1691-1693 1998
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Pit formation in GaInN quantum wells Reviewed
Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y
Appl. Phys. Lett. Vol. 72 ( 0 ) page： 710-712 1998
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Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP Reviewed
Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 58 ( 0 ) page： R13351-R13354 1998
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Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures Reviewed
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 58 ( 0 ) page： 1442-1450 1998
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Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L697-L699 1998
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GaN based laser diode with focused ion beam etched mirrors Reviewed
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L444-L446 1998
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN Reviewed
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L316-L318 1998
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Investigation of the leakage current in GaN p-n junctions Reviewed
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1202-L1204 1998
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Stress and defect control in GaN using low temperature interlayers Reviewed
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1540-L1542 1998
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Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 830-831 1998
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 758-762 1998
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Room-temperature photoluminescence linewidth versus material quality of GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1319-1322 1998
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Heteroepitaxy of group III nitrides for device applications Reviewed
Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1115-1120 1998
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Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 621-624 1998
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Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures Reviewed
Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 831-836 1998
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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 753-757 1998
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Thermal ionization energy of Si and Mg in (Al,Ga)N Reviewed
Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 528-531 1998