Papers - AMANO, Hiroshi
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Microscopic investigation of Al043Ga057N on sapphire Reviewed
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 38 ( 0 ) page： L1515-L1518 1999
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Optical transitions of the Mg acceptor in GaN Reviewed
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 38 ( 0 ) page： L1422-L1424 1999
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L1159-L1162 1999
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 43-45 1999
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Correlation of vibrational modes and DX-like centers in GaN:O Reviewed
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 109-112 1999
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy Vol. 2 ( 0 ) page： 693-694 1998
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 758-762 1998
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Room-temperature photoluminescence linewidth versus material quality of GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1319-1322 1998
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Heteroepitaxy of group III nitrides for device applications Reviewed
Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1115-1120 1998
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Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 621-624 1998
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Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures Reviewed
Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 831-836 1998
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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 753-757 1998
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Thermal ionization energy of Si and Mg in (Al,Ga)N Reviewed
Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 528-531 1998
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Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering Reviewed
Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 189/190 ( 0 ) page： 291-294 1998
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The dependence of the band gap on alloy composition in strained AlGaN on GaN Reviewed
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 205 ( 0 ) page： R7-R8 1998
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Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 195 ( 0 ) page： 309-313 1998
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The residual donor binding energy in AlGaN epitaxial layers Reviewed
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 165 ( 0 ) page： R3-R4 1998
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On the nature of radiative recombination processes in GaN Reviewed
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series Vol. 156 ( 0 ) page： 239-244 1998
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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S
Solid State Communications Vol. 105 ( 0 ) page： 497-501 1998
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Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy Reviewed
Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 73 ( 0 ) page： 1994-1996 1998