Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 256 ( 6 ) page： 1800648 2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13-13 2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Open Access

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 78-83 2019.4

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE Open Access

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 100-104 2019.4

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

NATURE PHOTONICS Vol. 13 ( 4 ) page： 233-244 2019.4

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates Open Access

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES Vol. 9 ( 4 ) page： 045007 2019.4

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 4 ) page： 040904 2019.4

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Open Access

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50-53 2019.3

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors Open Access

Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 3 ) page： 032004 2019.3

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics Open Access

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS Vol. 12 ( 5 ) page： 689 2019.3

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 page： 106 - 108 2019.3

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Effect of drift layer thicknesses (DLT) (2, 15 and 30 μm) in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of 2 μm and 30 μm exhibit TFE through Poole-Frenkel emission and TE, respectively. However, the SBDs with DLT of 15 μm exhibit both TFE and TE. Activation energy (Ea) of traps was also calculated to be 0.69 eV for 2 μm, 0.38 for 15 μm and 0.4 eV for 30 μm respectively. Ea of 0.69 eV and 0.4 eV could be associated with screw threading dislocations and the presence of Mg in the grown drift layer, respectively.

DOI： 10.1109/EDTM.2019.8731215

Scopus

Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2019.1 ( 0 ) page： 3122 - 3122 2019.2

Morphological study of InGaN on GaN substrate by supersaturation Open Access

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58-65 2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Open Access

Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 205 - 208 2019.2

Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

Nakano Kiyotaka, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

Materia Japan Vol. 58 ( 2 ) page： 103 - 103 2019.2

Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Open Access

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) page： 026502 2019.2

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

Zeghouane Mohammed, Avit Geoffrey, Andre Yamina, Bougerol Catherine, Robin Yoann, Ferret Pierre, Castelluci Dominique, Gil Evelyne, Dubrovskii Vladimir G., Amano Hiroshi, Trassoudaine Agnes

NANOTECHNOLOGY Vol. 30 ( 4 ) page： 044001 2019.1

Localization and transient emission properties in InGaN/ GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE Vol. 11 ( 1 ) page： 193 - 199 2019.1

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S. F.

APPLIED PHYSICS LETTERS Vol. 114 ( 1 ) page： 011102 2019.1

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Papers - AMANO, Hiroshi