Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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天野浩

日本物理学会誌 Vol. 76 ( 7 ) page： 478 - 478 2021.7

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Liao Y., Chen T., Wang J., Ando Y., Cai W., Yang X., Watanabe H., Hirotani J., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

Japanese Journal of Applied Physics Vol. 60 ( 7 ) 2021.7

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

An optimized top-down approach was utilized to fabricate vertical GaN-on-GaN nanowire Schottky barrier diodes (NWSBDs) in this letter. The suppressed reverse leakage current and enhanced breakdown voltage (BV) of the vertical GaN NWSBDs are attributed to the reduced electric field at the interface of the Schottky junction achieved through the dielectric reduced surface field technique. As-fabricated NWSBD delivers a low turn-on voltage of 0.80 V, a near-unity ideality factor of 1.04, along with a soft BV of 480 V. The measured soft BV is comparable with the avalanche BV of the p-n diode with a similar net doping concentration in the drift region.

DOI： 10.35848/1347-4065/ac06b5

Web of Science

Scopus

Isamu Akasaki: The Pioneer of Blue LEDs and his Collaboration with <i>pss</i> OBITUARY

Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 218 ( 14 ) 2021.7

Non-polar true-lateral GaN power diodes on foreign substrates

Wang, J; Yu, G; Zong, H; Liao, YQ; Lu, WF; Cai, WT; Hu, XD; Xie, YH; Amano, H

APPLIED PHYSICS LETTERS Vol. 118 ( 21 ) 2021.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p-n junction diode) on foreign substrates featuring the true-lateral p-n and metal-semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90° rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p-n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications.

DOI： 10.1063/5.0051552

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Scopus

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation.

Park JH, Yang X, Lee JY, Park MD, Bae SY, Pristovsek M, Amano H, Lee DS

Chemical science Vol. 12 ( 22 ) page： 7713 - 7719 2021.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Chemical Science

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al2O3; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al2O3could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.

DOI： 10.1039/d1sc01642c

Web of Science

Scopus

PubMed

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) page： SBBD03 2021.5

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 14 ( 5 ) page： 051003 2021.5

Micro-Light Emitting Diode: From Chips to Applications

Parbrook Peter J., Corbett Brian, Han Jung, Seong Tae-Yeon, Amano Hiroshi

LASER & PHOTONICS REVIEWS Vol. 15 ( 5 ) page： 2000133 2021.5

Discrete AlN mole fraction of n/12 (n = 4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Y. Nagasawa, A. Hirano, M. Ippommatsu, H. Sako, A. Hashimoto, R. Sugie, Y. Honda, H. Amano, I. Akasaki, K. Kojima, S. F. Chichibu

Journal of Applied Physics Vol. 129 ( 16 ) page： 164503 2021.4

Experimental demonstration of GaN IMPATT diode at X-band

Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 14 ( 4 ) page： 046501 2021.4

Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes

Sim Kee-Baek, Kim Su-Kyung, Lee Hwa-Seub, Lee Sang-Youl, Seong Tae-Yeon, Amano Hiroshi

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 10 ( 4 ) page： 045005 2021.4

Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects

Crystals Vol. 11 ( 4 ) page： 356 2021.4

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.

Avit G, Robin Y, Liao Y, Nan H, Pristovsek M, Amano H

Scientific reports Vol. 11 ( 1 ) page： 6754 2021.3

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

CRYSTAL GROWTH & DESIGN Vol. 21 ( 3 ) page： 1878 - 1890 2021.3

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 14 ( 3 ) page： 036505 2021.3

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

CRYSTALS Vol. 11 ( 3 ) page： 1 - 27 2021.3

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

QUANTUM BEAM SCIENCE Vol. 5 ( 1 ) page： 5 2021.3

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

APPLIED PHYSICS LETTERS Vol. 118 ( 7 ) page： 072103 2021.2

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS Vol. 11 ( 2 ) page： 524 - 524 2021.2

3D GaN Power Switching Electronics: A Revival of Interest in ELO

Wang, J; Amano, H; Xie, YH

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) 2021

Language：English Publishing type：Research paper (scientific journal) Publisher：2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

We reported the first-time utilization of ELO (epitaxial lateral overgrowth) GaN (gallium nitride) for power diodes. The undesired stage of coalescence related to ELO is avoided by virtue of a novel 3D device architecture built on the ELO GaN islands on foreign substrate which features pure-lateral p-n and n+ -n-junctions and electrodes lying on the opposing sidewalls of the island. Excellent electrical performance was demonstrated, revealing a strong potential of ELO GaN with 3D device architecture for power switching applications.

DOI： 10.1109/EDTM50988.2021.9420859

Web of Science

Scopus

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Papers - AMANO, Hiroshi