Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

Division display 241 - 260 of about 855 ／ All the affair displays >>

Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCC06 2019.6

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCD20 2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCD25 2019.6

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SCCB24 2019.6

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) page： SC1044 2019.6

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

APPLIED PHYSICS EXPRESS Vol. 12 ( 6 ) page： 064009 2019.6

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 256 ( 6 ) page： 1800648 2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13-13 2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 78-83 2019.4

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 100-104 2019.4

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

NATURE PHOTONICS Vol. 13 ( 4 ) page： 233-244 2019.4

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES Vol. 9 ( 4 ) page： 045007 2019.4

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 4 ) page： 040904 2019.4

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50-53 2019.3

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 3 ) page： 032004 2019.3

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS Vol. 12 ( 5 ) page： 689 2019.3

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 page： 106 - 108 2019.3

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Effect of drift layer thicknesses (DLT) (2, 15 and 30 μm) in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of 2 μm and 30 μm exhibit TFE through Poole-Frenkel emission and TE, respectively. However, the SBDs with DLT of 15 μm exhibit both TFE and TE. Activation energy (Ea) of traps was also calculated to be 0.69 eV for 2 μm, 0.38 for 15 μm and 0.4 eV for 30 μm respectively. Ea of 0.69 eV and 0.4 eV could be associated with screw threading dislocations and the presence of Mg in the grown drift layer, respectively.

DOI： 10.1109/EDTM.2019.8731215

Scopus

Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2019.1 ( 0 ) page： 3122 - 3122 2019.2

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58-65 2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 205 - 208 2019.2

　 PREV - NEXT 　

<AMANO, Hiroshi>

Papers - AMANO, Hiroshi