Papers - AMANO, Hiroshi
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 453-455 2002
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Annihilation of threading dislocations in GaN/AlGaN Reviewed
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 366-370 2002
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UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 296-300 2002
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 21-26 2002
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 161-166 2002
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates Reviewed
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 107-111 2002
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 813-817 2002
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 713-718 2002
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 197-201 2002
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Reviewed
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 139-142 2002
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Optical characterization of III-nitrides Reviewed
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 112-122 2002
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 92 ( 0 ) page： 3657-3661 2002
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Atomic arrangement at the AlN/ZrB2 interface Reviewed
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 81 ( 0 ) page： 3182-3184 2002
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Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 802-804 2002
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 3093-3095 2002
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Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 1373-1375 2002
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Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 41 ( 0 ) page： 11-14 2002
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Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 20 ( 0 ) page： 216-218 2002
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Critical issues in AlxGa1-xN growth Reviewed
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands Vol. 19 ( 0 ) page： 219-222 2002
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Novel aspects of the growth of nitrides by MOVPE Reviewed
Amano H, Akasaki I
Journal of Physics: Condensed Matter Vol. 13 ( 0 ) page： 6935-6944 2001