Papers - AMANO, Hiroshi
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Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 240 ( 0 ) page： 356-359 2003
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Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures Reviewed
Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 237 ( 0 ) page： 353-364 2003
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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE Reviewed
Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 585-589 2003
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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Reviewed
Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science Vol. 216 ( 0 ) page： 502-507 2003
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1129-1132 2002
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Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum Vol. 389-393 ( 0 ) page： 1493-1496 2002
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MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 968-971 2002
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 951-955 2002
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Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 947-950 2002
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Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1139-1142 2002
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Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1133-1138 2002
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Electric fields in polarized GaInN/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 14 ( 0 ) page： 219-258 2002
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Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1065-1069 2002
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Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 235 ( 0 ) page： 129-134 2002
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Migration of dislocations in strained GaN heteroepitaxial layers Reviewed
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 952-955 2002
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Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 850-854 2002
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Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 755-758 2002
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Mass transport of AlxGa1-xN Reviewed
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 485-488 2002
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High-efficiency UV light-emitting diode Reviewed
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 393-398 2002
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 453-455 2002