Papers - AMANO, Hiroshi
-
Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1129-1132 2002
-
Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum Vol. 389-393 ( 0 ) page： 1493-1496 2002
-
MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 968-971 2002
-
Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 951-955 2002
-
Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 947-950 2002
-
Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1139-1142 2002
-
Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1133-1138 2002
-
Electric fields in polarized GaInN/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 14 ( 0 ) page： 219-258 2002
-
High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 813-817 2002
-
Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 713-718 2002
-
Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 197-201 2002
-
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Reviewed
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 139-142 2002
-
Optical characterization of III-nitrides Reviewed
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 112-122 2002
-
Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 92 ( 0 ) page： 3657-3661 2002
-
Atomic arrangement at the AlN/ZrB2 interface Reviewed
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 81 ( 0 ) page： 3182-3184 2002
-
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 802-804 2002
-
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 3093-3095 2002
-
Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 1373-1375 2002
-
Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 41 ( 0 ) page： 11-14 2002
-
Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 20 ( 0 ) page： 216-218 2002