Papers - AMANO, Hiroshi
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Crystal growth of column-III nitride semiconductors and their electrical and optical properties Reviewed
Akasaki I, Amano H
J. Crystal Growth Vol. 163 ( 0 ) page： 86-92 1996
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Raman and photoluminescence imaging of the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Detchprohm T, Hiramatsu K, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 149 ( 0 ) page： 97-102 1996
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Present and future of group III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
Institute of Physics Conference Series Vol. 145 ( 0 ) page： 19-22 1996
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Relaxation and recombination dynamics in GaN/Al2O3 epilayers Reviewed
Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 927-930 1996
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Remote plasma hydrogenation of Mg-doped GaN Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 1031-1034 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 935-938 1996
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Exciton dynamics in GaN Reviewed
Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 931-934 1996
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Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode Reviewed
Akasaki Isamu, Amano Hiroshi, Suemune ikuo
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 2010/07/10 1996
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Determination of the conduction band electron effective mass in hexagonal GaN Reviewed
M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1178-L1179 1995
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Characterization of residual transition metal ions in GaN and AlN Reviewed
Baur J., Kaufmann U., Kunzer M., Schneider J., Amano H., Akasaki I., Detchprohm T., Hiramatsu K.
Materials Science Forum Vol. 196-201 ( 0 ) page： 20333 1995
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Crystal growth of column III nitrides and their applications to short wavelength light emitters Reviewed
Akasaki I, Amano H
J. Crystal Growth Vol. 146 ( 0 ) page： 455-61 1995
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Magneto-optical investigation of the neutral donor bound exciton in GaN Reviewed
Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I
Solid State Communications Vol. 96 ( 0 ) page： 53-56 1995
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Exciton lifetimes in GaN and GaInN Reviewed
Harris C I, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 840-2 1995
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Surface-mode stimulated emission from optically pumped GaInN at room temperature Reviewed
Kim S T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 267-9 1995
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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1966/08/01 1995
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Photoluminescence of residual transition metal impurities in GaN Reviewed
Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1140-2 1995
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p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed
Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1112-13 1995
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Photoemission capacitance transient spectroscopy of n-type GaN Reviewed
Gotz W, Johnson N M, Street R A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1340-2 1995
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Properties of the yellow luminescence in undoped GaN epitaxial layers Reviewed
. Hofmann D. M., Kovalev D., Steude G., Meyer B. K., Hoffmann A., Eckey L., Heitz R., Detchprom T., Amano H., Akasaki I.
Physical Review B: Condensed Matter Vol. 52 ( 0 ) page： 16702-6 1995
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Exciton dynamics in GaN Reviewed
. Bergman J.P., Monemar B., Amano H., Akasaki I.
Lietuvos Fizikos Zurnalas Vol. 35 ( 0 ) page： 569-574 1995