Papers - AMANO, Hiroshi
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Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well Reviewed
Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B Vol. 244 ( 0 ) page： 1727-1734 2007
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One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters Reviewed
Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A Vol. 204 ( 0 ) page： 2005-2009 2007
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High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate Reviewed
Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.
Physica Status Solidi A Vol. 204 ( 0 ) page： 2000-2004 2007
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Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. Reviewed
Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.
Acta Physica Polonica, A Vol. 112 ( 0 ) page： 395-400 2007
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Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Reviewed
Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.
Philosophical Magazine Vol. 87 ( 0 ) page： 2019-2039 2007
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Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. Reviewed
Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 5782-5784 2007
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Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy Reviewed
Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： L307-L310 2007
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Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 1458-1462 2007
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Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 115-118 2007
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology Vol. 18 ( 0 ) page： 025401/1-025401/6 2007
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Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2708-2711 2007
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2528-2531 2007
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Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2502-2505 2007
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Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2272-2276 2007
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Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed
Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1392-1395 2006
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High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： L1048-L1050 2006
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed
Akasaki Isamu, Amano Hiroshi.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 9001-9010 2006
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High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 8639-8643 2006
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Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2509-2513 2006
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Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy Reviewed
Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 45 ( 0 ) page： 2502-2504 2006