Papers - AMANO, Hiroshi
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Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy Reviewed
Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： L307-L310 2007
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Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 1458-1462 2007
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Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 115-118 2007
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology Vol. 18 ( 0 ) page： 025401/1-025401/6 2007
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Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2708-2711 2007
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2528-2531 2007
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Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2502-2505 2007
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Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2272-2276 2007
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Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed
Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1392-1395 2006
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Reviewed
Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O
Nature Materials Vol. 5 ( 0 ) page： 810-816 2006
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Growth of high-quality AlN at high growth rate by high-temperature MOVPE Reviewed
Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1617-1619 2006
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Light extraction process in moth-eye structure Reviewed
Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.
Physica Status Solidi C Vol. 3 ( 0 ) page： 2165-2168 2006
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Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells Reviewed
Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.
Physica Status Solidi C Vol. 3 ( 0 ) page： 1888-1891 2006
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Polarity and microstructure in InN thin layers grown by MOVPE Reviewed
Kuwano N., Nakahara Y., Amano H..
Physica Status Solidi C Vol. 3 ( 0 ) page： 1523-1526 2006
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Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells Reviewed
Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.
Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu Vol. 5 ( 0 ) page： 73-77 2006
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A hydrogen-related shallow donor in GaN? Reviewed
Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page： 460-463 2006
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page： 491-495 2006
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B Vol. 376-377 ( 0 ) page： 440-443 2006
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6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed
Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.
Materials Science Forum Vol. 527 ( 0 ) page： 263-266 2006