Papers - AMANO, Hiroshi
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Heteroepitaxial growth and the effect of strain on the luminescent properties of gallium mononitride films on (11-20) and (0001) sapphire substrates Reviewed
H. Amano, K. Hiramatsu, I. Akasaki
Jpn. J. Appl. Phys. Vol. 27 ( 0 ) page： L1384-L1386 1988
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Electron beam effects on blue luminescence of zinc-doped gallium mononitride Reviewed
H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii
J. Lumin. Vol. 40-41 ( 0 ) page： 121-122 1988
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Effects of the buffer layer in metalorganic vapor phase epitaxy of gallium mononitride on sapphire substrate Reviewed
H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki
Thin Solid Films Vol. 163 ( 0 ) page： 415-420 1988
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Zinc related electroluminescent properties in MOVPE grown gallium nitride Reviewed
H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki
J. Crystal Growth Vol. 93 ( 0 ) page： 79-82 1988
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High-efficiency blue LED utilizing gallium nitride (GaN) film with an aluminum nitride (AlN) buffer layer grown by MOVPE Reviewed
I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki
Inst. Phys. Conf. Ser. Vol. 91 ( 0 ) page： 633-636 1988
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Crystal growth and properties of gallium nitride and its blue light-emitting diode Reviewed
I. Akasaki, H. Amano, N. Sawaki, M. Hashimoto, Y. Ohki, Y. Toyoda
Jpn Ann. Rev. Elec. Comp. & Telecom. Vol. 19 ( 0 ) page： 295-307 1986
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Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer Reviewed
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda
Appl. Phys. Lett. Vol. 48 ( 0 ) page： 353-355 1986
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Effects of hydrogen in an ambient on the crystal growth of gallium nitride using trimethyl gallium and ammonia Reviewed
M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki
J. Crystal Growth Vol. 68 ( 0 ) page： 163-168 1984