Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes Invited Reviewed

Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

CRYSTALS Vol. 13 ( 3 ) 2023.3

Language：English Publishing type：Research paper (scientific journal) Publisher：Crystals

Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To this end, the present study focuses on developing a transparent AlGaN homoepitaxial tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The developed deep-UV LED achieved an operating voltage of 10.8 V under a direct current (DC) operation of 63 A cm−2, which is one of the lowest values among devices composed of AlGaN tunnel homojunctions. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was increased to 57.3 mW under a 63 A cm−2 DC operation, which was 1.7 times higher than that achieved using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can achieve a high light-extraction efficiency.

DOI： 10.3390/cryst13030524

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions. Reviewed

Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H

Materials (Basel, Switzerland) Vol. 16 ( 5 ) 2023.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Materials

With the ammonothermal method, one of the most promising technologies for scalable, cost-effective production of bulk single crystals of the wide bandgap semiconductor GaN is investigated. Specifically, etch-back and growth conditions, as well as the transition from the former to the latter, are studied using a 2D axis symmetrical numerical model. In addition, experimental crystal growth results are analyzed in terms of etch-back and crystal growth rates as a function of vertical seed position. The numerical results of internal process conditions are discussed. Variations along the vertical axis of the autoclave are analyzed using both numerical and experimental data. During the transition from quasi-stable conditions of the dissolution stage (etch-back process) to quasi-stable conditions of the growth stage, significant temperature differences of 20 K to 70 K (depending on vertical position) occur temporarily between the crystals and the surrounding fluid. These lead to maximum rates of seed temperature change of 2.5 K/min to 1.2 K/min depending on vertical position. Based on temperature differences between seeds, fluid, and autoclave wall upon the end of the set temperature inversion process, deposition of GaN is expected to be favored on the bottom seed. The temporarily observed differences between the mean temperature of each crystal and its fluid surrounding diminish about 2 h after reaching constant set temperatures imposed at the outer autoclave wall, whereas approximately quasi-stable conditions are reached about 3 h after reaching constant set temperatures. Short-term fluctuations in temperature are mostly due to fluctuations in velocity magnitude, usually with only minor variations in the flow direction.

DOI： 10.3390/ma16052016

Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates Reviewed

Cai, WT; Wang, J; Park, JH; Furusawa, Y; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 2 ) 2023.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We demonstrated nanoplatelet In x Ga1−x N pseudosubstrates with In content varying from 0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in-plane strain, thus allowing for the use of a thick active layer to reduce built-in polarization. The 15 nm thick InGaN active layers grown under the same conditions on these nanoplatelets showed a remarkable cathodoluminescence redshift from 460 to 617 nm, suggesting enhanced In incorporation efficiency in InGaN nanoplatelets with higher In content. Moreover, the 617 nm-emitting sample presented an imperceptible blueshift under excitation-power-dependent photoluminescence, indicating a weak polarization field introduced by the high-In-content pseudosubstrates and the thick active layer.

DOI： 10.35848/1347-4065/acb74c

Particle Collection Characteristics of Electrostatic Precipitator with Flat Plate Collection Electrodes

TAKAMURE Kotaro, IWATANI Yasumasa, AMANO Hiroshi, YAGI Tetsuya, UCHIYAMA Tomomi

The Proceedings of Mechanical Engineering Congress, Japan Vol. 2023 ( 0 ) page： S054-05 2023

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Mechanical Engineers

<p>An electrostatic precipitator suitable for the collection of aerosol-sized particles is developed. This device is a two-stage electrostatic precipitator divided into a corona discharge part and a collection electrode part. Positive ion is charged to the virus particles by corona discharge, and the negative pole of the collection electrode installed in the later stage collects these particles. The particle collection performance of the system is investigated when the inlet velocity (inlet flowrate) is varied. As a result, even at the same inlet velocity, the collection rate increased with smaller particle size. Furthermore, the collection efficiency of particles decreased with increasing flow velocity.</p>

DOI： 10.1299/jsmemecj.2023.s054-05

Numerical simulation and validation of carbon incorporation in GaN epitaxial growth by MOVPE method

MUKAIYAMA Yuji, WATANABE Hirotaka, NITTA Shugo, IIZUKA Masaya, AMANO Hiroshi

The Proceedings of The Computational Mechanics Conference Vol. 2023.36 ( 0 ) page： OS-1406 2023

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Mechanical Engineers

<p>One of the crucial challenges in GaN epitaxial growth by metalorganic vapor phase epitaxy (MOVPE) method is the control of carbon (C) incorporation, which affects the resistivity of the individual layer of high-power and high-frequency devices based on GaN. Incorporating C into the GaN epilayer depends on various process parameters, such as growth temperature, pressure, carrier gas, flow rates of source gases, and reactor type. To determine the process parameters that control incorporated C concentration and uniformity, we have developed a novel numerical model for C incorporation into the grown GaN epilayer using MOVPE method. The developed model considers C incorporation through the decomposition of Ga source gas. We have implemented this model in a commercial crystal growth simulator, Virtual Reactor Nitride Edition, developed by STR. This study used experimental data to evaluate the dependence of temperature, growth rate, and V/III ratio of C incorporation predicted by the simulations. These results showed a strong correlation between the C concentration and these parameters, and good agreement with the experimental data.</p>

DOI： 10.1299/jsmecmd.2023.36.os-1406

Metal Stop Laser Drilling for Blind via Holes of GaN-on-GaN Devices Reviewed

Sasaoka C., Ando Y., Takahashi H., Ikarashi N., Amano H.

Physica Status Solidi (A) Applications and Materials Science 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi (A) Applications and Materials Science

The metal stop laser drilling of GaN-on-GaN devices is demonstrated using a UV sub-nanosecond laser as a light source. By monitoring the Bremsstrahlung emission at the drilling point, metal stops with a precision higher than 1 μm are realized for vias with a depth of 100 μm. From in situ laser-induced breakdown spectroscopy measurements, it is shown that endpoint detection is realized with high signal-to-noise ratio owing to the difference in the emission process between the strongly excited semiconductor and the metal. Herein, a through-substrate electrode with a resistance of less than 5 mΩ on GaN-on-GaN high-electron-mobility transistor (HEMT) wafers is demonstrated. The fabrication of through-substrate electrodes by this technique provides a simple process that does not require lithography or other complex processes. This process is expected to be useful in the fabrication of future GaN-on-GaN devices, including very thin GaN-on-GaN HEMTs.

DOI： 10.1002/pssa.202200739

Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current

Nishitani T., Arakawa Y., Noda S., Koizumi A., Sato D., Shikano H., Iijima H., Honda Y., Amano H.

Proceedings of SPIE - The International Society for Optical Engineering Vol. 12496 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Proceedings of SPIE - The International Society for Optical Engineering

The scanning electron microscope (SEM) with photocathode technology was launched by retrofitting the photocathode electron gun to a commercial-based SEM system. In this SEM system, the excitation laser for photoelectron generation from the photocathode is synchronized to the scanning signal. SEM images were obtained by high-speed modulation of the photoelectron beam current using the photocathode SEM, where the location in the field of view and its irradiation current were arbitrarily selected on a pixel-by-pixel basis (Selective e-Beaming technology). As a demonstration experiment contributing to non-contact electrical inspection, low-voltage SEM imaging of MOS-FET structures in 3D-NAND flash memory was performed using this selective e-beam technology. As a result, changes in the voltage contrast of the drain electrode were observed in response to on/off selective electron beam irradiation to the gate electrode in the MOS-FET structure. As an extension of the selective electron beaming technology, a Yield Controlled e-beaming (YCeB) technology was invented to control the secondary electron yield generated in the entire field of view of the SEM image by feedback control of the laser power irradiating the photocathode to the intensity of each pixel in the SEM image. The YCeB image, in which the laser power intensity corresponding to the probe intensity is modulated so that the secondary electron yield generated in the entire field of view of the SEM image is constant, is a clearer image with less noise than the original SEM image.

DOI： 10.1117/12.2657853

Novel Electron Beam Technology using InGaN Photocathode for High-Throughput Scanning Electron Microscope Imaging

Sato, D; Koizumi, A; Shikano, H; Noda, S; Otsuka, Y; Yasufuku, D; Mori, K; Iijima, H; Nishitani, T; Honda, Y; Amano, H

METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII Vol. 12496 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Proceedings of SPIE - The International Society for Optical Engineering

An InGaN photocathode with a negative electron affinity (NEA) surface is suitable for industrial use because of features such as a long quantum efficiency lifetime, availability with a visible laser as an excitation light source, and the presence of a transmission-type structure. The first objective is the development of an InGaN photocathode electron gun that can be mounted on a scanning electron microscope (SEM) and the evaluation of the electron beam size at the emission point, maximum emission current, and transverse energy of the electron beam, which are important factors for realizing a high probe current in the SEM. The second objective is the evaluation of emission current stability, while the third objective is the generation of a pulsed electron beam and multi-electron beam from the InGaN photocathode. The parameters of the electron beam from the photocathode electron gun were an emission beam radius of 1 µm, transverse energy of 44 meV, and an emission current of up to 110 µA. Using a high beam current with low transverse energy from the photocathode, a 13 nA probe current with 10 nm SEM resolution was observed with 15 µA emission. At 15 µA, the continuous electron beam emission for 1300 h was confirmed; at 30 µA, the cycle time between the NEA surface reactivations was confirmed to be 90 h with 0.043% stability. Moreover, a 4.4 ns pulsed e-beam with a 4.7 mA beam current was generated, and a 5 × 5 multielectron beam with 12% uniformity was then obtained. The advantages of the InGaN photocathode, such as high electron beam current, low transverse energy, long quantum efficiency lifetime, pulsed electron beam, and multi-electron beam, are useful in industries including semiconductor device inspection tools.

DOI： 10.1117/12.2657032

Development in AlGaN homojunction tunnel junction deep UV LEDs

Nagata K., Anada S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

Proceedings of SPIE - The International Society for Optical Engineering Vol. 12441 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Proceedings of SPIE - The International Society for Optical Engineering

To reduce the operating voltage, we analyzed the p-n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode using phase-shifting electron holography. We obtained a phase image reflecting the band alignment of the p-n homojunction and derived a depletion layer width of approximately 10 nm. We found the AlGaN homojunction TJ forms a p-n junction. Furthermore, the operating voltage reached 8.8 V at 63 A cm-2 by optimizing the structural characteristics of the AlGaN TJ, such as the thickness and impurity concentration, where the thickness of the TJ was 23 nm. We found that the TJ thickness should be at least the same as the depletion layer width at the AlGaN TJ.

DOI： 10.1117/12.2646757

Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping

Kumabe T., Yoshikawa A., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

Technical Digest - International Electron Devices Meeting, IEDM 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Technical Digest - International Electron Devices Meeting, IEDM

Nearly ideal AlN-based vertical p-n diodes are demonstrated on an AIN substrate utilizing dopant-free distributed-polarization doping (DPD). Capacitance-voltage measurements revealed that the effective doping concentration agreed well with the designed DPD charge concentration. The fabricated devices exhibited a low tum-on voltage of 6.5 V, a low differential specific ON-resistance of 3 mO cm2, and an ideality factor of 2 for a wide range of temperatures (room temperature-573 K). Moreover, the breakdown electric field was 7.3 MV/cm, which was almost twice as high as the reported critical electric field of 4H-SÌC and GaN. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

DOI： 10.1109/IEDM45741.2023.10413866

Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

Matsumoto K., Ohnishi K., Amano H.

Proceedings of SPIE - The International Society for Optical Engineering Vol. 12441 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：Proceedings of SPIE - The International Society for Optical Engineering

Until recently, lack of stable p-type doping source in HVPE hindered its use to the application of III-nitride light emitting devices. Recently, K. Ohnishi discovered the stable MgO source for p-type doping in GaN HVPE. This has enabled the use of HVPE for light emitting devices as well as electron devices such as vertical MOSFET. In this article, we will review the current HVPE technology of p-GaN HVPE, multi-junction AlInGaP/InGaP/GaAs solar cell, InGaN HVPE by tri-chlorides, and discuss the challenge and opportunities of III-nitride HVPE in terms of epitaxial layer design and the remaining issues of the growth of the low temperature buffer, MQWs as well as the source supply design to grow multilayer structures.

DOI： 10.1117/12.2647336

Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

Deki M., Kawarabayashi H., Honda Y., Amano H.

AIAA Aviation and Aeronautics Forum and Exposition, AIAA AVIATION Forum 2023 2023

Language：English Publishing type：Research paper (scientific journal) Publisher：AIAA Aviation and Aeronautics Forum and Exposition, AIAA AVIATION Forum 2023

We demonstrated static characteristics testing and Double-Pulse-Testing (DPT) at 77 K using GaN-Polarization Super Junction (PSJ) transistors, commercialized GaN HEMTs and commercialized SiC-MOSFETs. In the results of SiC-MOSFETs, total switching losses increased at 77 K due to the increase in on-resistance (Ron). On the other hand, in the results of GaN-PSJ transistors, total switching losses decreased at 77 K due to the increase in channel mobilities. In the case of GaN-PSJ transistors, energy losses which are induced self-charging and discharging (Eqoss) in the upper side DUT increased at 77 K. From the measurement of Vds dependence of Cds, Cds increased at 77 K compared with room temperature conditions. However, total switching losses decreased at low temperatures because Eqoss accounts for about 10% of the switching losses.

DOI： 10.2514/6.2023-4538

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars Reviewed

Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 21208 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Scientific Reports

Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.

DOI： 10.1038/s41598-022-25522-6

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

Takamure, K; Sakamoto, Y; Iwatani, Y; Amano, H; Yagi, T; Uchiyama, T

ENVIRONMENT INTERNATIONAL Vol. 170 page： 107580 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Environment International

A general-purpose virus inactivation unit that can inactivate viruses was developed using deep ultraviolet (DUV) LEDs that emit DUV rays with a wavelength of 280 nm. The inside of the virus inactivation unit is a rectangular conduit with a sharp turn of 180° (sharp-turned rectangular conduit). Virus inactivation is attempted by directly irradiating the air passing through the conduit with DUV rays. The flow characteristics of air and virus particles inside the virus inactivation unit were investigated using numerical simulations. The air was locally accelerated at the sharp turn parts and flowed along the partition plate in the sharp-turned rectangular conduit. The aerosol particles moving in the sharp-turned rectangular conduit were greatly bent in orbit at the sharp turn parts, and then rapidly approached the partition plate at the lower part of the conduit. Consequently, many particles collided with the partition plates behind the sharp-turn parts. SARS-CoV-2 virus was nebulized in the virus inactivation unit, and the RNA concentration and virus inactivation rate with and without the emission of DUV-LEDs were measured in the experiment. The concentration of SARS-CoV-2 RNA was reduced to 60% through DUV-LED irradiation. In addition, SARS-CoV-2 passing through the virus inactivation unit was inactivated below the detection limit by the emission of DUV-LEDs. The virus inactivation rate and the value of the detection limit corresponded to 99.38% and 35.36 TCID50/mL, respectively.

DOI： 10.1016/j.envint.2022.107580

Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes Reviewed

Nishitani, T; Arakawa, Y; Noda, S; Koizumi, A; Sato, D; Shikano, H; Iijima, H; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 40 ( 6 ) 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Vacuum Science and Technology B

Pulsed electron beams from a photocathode using an InGaN semiconductor have brought selectively scanning technology to scanning electron microscopes, where the electron beam irradiation intensity and area can be arbitrarily selected within the field of view in SEM images. The p-type InGaN semiconductor crystals grown in the metalorganic chemical vapor deposition equipment were used as the photocathode material for the electron beam source after the surface was activated to a negative electron affinity state in the electron gun under ultrahigh vacuum. The InGaN semiconductor photocathode produced a pulsed electron beam with a rise and fall time of 3 ns, consistent with the time structure of the irradiated pulsed laser used for the optical excitation of electrons. The InGaN photocathode-based electron gun achieved a total beam operation time of 1300 h at 15 μA beam current with a downtime rate of 4% and a current stability of 0.033% after 23 cycles of surface activation and continuous beam operation. The InGaN photocathode-based electron gun has been installed in the conventional scanning electron microscope by replacing the original field emission gun. SEM imaging was performed by selective electron beaming, in which the scanning signal of the SEM system was synchronized with the laser for photocathode excitation to irradiate arbitrary regions in the SEM image at arbitrary intensity. The accuracy of the selection of regions in the SEM image by the selective electron beam was pixel by pixel at the TV scan speed (80 ns/pix, 25 frame/s) of the SEM.

DOI： 10.1116/6.0002111

Miniature optical fiber curvature sensor via integration with GaN optoelectronics

Shi F., Zhang H., Ye Z., Tang X., Qin F., Yan J., Gao X., Zhu H., Wang Y., Liu Y., Amano H.

Communications Engineering Vol. 1 ( 1 ) 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Communications Engineering

Optical fiber curvature sensors have been considered as a promising option for human motion detection due to its good toughness, bending flexibility and anti-electromagnetic interference. However, for wearable devices, the miniature configuration is preferred, and a high integration of the light emitter, receiver and guided fiber is essential to configure the miniaturized sensing system. Here, we present a miniaturized curvature sensing system by integrating a GaN-based optoelectronic chip with the plastical optical fiber (POF). The light emitter and detector are fabricated on a GaN-on-sapphire wafer to form a tiny chip sized at 2.5 × 1.5 mm2. The on-chip photodetector (PD) effectively senses the reflected light intensity, extracting information on the fiber bending deformation. A compact curvature sensing system is demonstrated for finger motion detection with movement angles of 30–90° and frequencies of 0.4, 1, and 1.6 Hz. The results show that the monolithically integrated LED and PD chip can be combined with the POF with reliable operation. The demonstration of the monolithically integrated optoelectronic device suggests a promising potential technology for future wearable fiber optical sensor system.

DOI： 10.1038/s44172-022-00049-w

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been confirmed in the previous studies, continuous oscillation without cooling is difficult because of the high operating voltage. In this study, the temperature dependence of key parameters was investigated and their impact on achieving continuous-wave lasing was discussed. A reduction in the threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. As a result, continuous-wave lasing at room temperature was demonstrated at a threshold current density of 4.2 kA / cm 2 and a threshold voltage of 8.7 V.

DOI： 10.1063/5.0124480

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

Previously reported UV-C laser diode (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress using a sloped mesa geometry was proposed based on insight gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic devices, including UV-C LDs.

DOI： 10.1063/5.0124512

Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on <i>n-</i>Al<sub>0.6</sub>Ga<sub>0.4</sub>N

Sim, KB; Kim, SK; Seong, TY; Amano, H

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 11 ( 11 ) 2022.11

Language：English Publishing type：Research paper (scientific journal) Publisher：ECS Journal of Solid State Science and Technology

We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al0.6Ga0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.

DOI： 10.1149/2162-8777/aca1df

Substitutional diffusion of Mg into GaN from GaN/Mg mixture Reviewed

Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 11 ) 2022.11

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg increased with diffusion temperature from 1100 °C to 1300 °C, whereas the Mg concentration remained constant at 2-3 × 1018 cm−3 independent of temperature. The estimated activation energy for Mg diffusion was 2.8 eV, from which the substitutional diffusion mechanism was predicted. Mg-diffused GaN samples showed p-type conductivity with a maximum hole mobility of 27.7 cm2 V−1 s−1, suggesting that substitutional diffusion contributes to Mg activation. This diffusion technique can be used to easily form p-type GaN and has potential as a p-type selective doping technique.

DOI： 10.35848/1882-0786/ac9c83

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