Papers - AMANO, Hiroshi
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Magneto-optical investigation of the neutral donor bound exciton in GaN Reviewed
Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I
Solid State Communications Vol. 96 ( 0 ) page： 53-56 1995
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Exciton lifetimes in GaN and GaInN Reviewed
Harris C I, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 840-2 1995
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Surface-mode stimulated emission from optically pumped GaInN at room temperature Reviewed
Kim S T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 267-9 1995
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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1966/08/01 1995
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Photoluminescence of residual transition metal impurities in GaN Reviewed
Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1140-2 1995
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p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed
Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1112-13 1995
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Photoemission capacitance transient spectroscopy of n-type GaN Reviewed
Gotz W, Johnson N M, Street R A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1340-2 1995
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Polarization of light from an optically pumped (Al-Ga-N)/(Ga-In-N) double heterostructure Reviewed
S. T. Kim, T. Tanaka, H. Amano and I. Akasaki
Mater. Sci. & Eng. B Vol. 26 ( 0 ) page： L5-L7 1994
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Iron acceptors in gallium nitride (GaN) Reviewed
K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki and H. Amano.
Materials Science Forum Vol. 143-147 ( 0 ) page： 1993/08/01 1994
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ODMR studies of MOVPE-grown GaN epitaxial layers Reviewed
M. Kunzer, U. Kaufmann, K. Maier, J. Schneider, N. Herres, I. Akasaki and H. Amano.
Materials Science Forum Vol. 143-147 ( 0 ) page： 87-92 1994
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Widegap column-III nitride semiconductors for UV/blue light emitting devices Reviewed
I. Akasaki and H. Amano.
Journal of the Electrochemical Society Vol. 141 ( 0 ) page： 2266-71 1994
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Perspective of UV/blue light emitting devices based on column-III nitrides Reviewed
I. Akasaki and H. Amano.
Institute of Physics Conference Series Vol. 136 ( 0 ) page： 249-56 1994
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p-Type conduction in Mg-doped GaN and Al008Ga092N grown by metalorganic vapor phase epitaxy Reviewed
T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike
Appl. Phys. Lett. Vol. 65 ( 0 ) page： 593-4 1994
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Deep level defects in n-type GaN Reviewed
W. Goetz, N. M. Johnson, H. Amano and I. Akasaki
Appl. Phys. Lett. Vol. 65 ( 0 ) page： 463-5 1994
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Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers Reviewed
J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm and K. Hiramatsu
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 857-9 1994
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Optical gain of optically pumped Al01Ga09N/GaN double heterostructure at room temperature Reviewed
S. T. Kim, H. Amano, I. Akasaki and N. Koide
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 1535-6 1994
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Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure Reviewed
H. Amano, T. Tanaka Y. Kunii, K. Kato S. T. Kim and I. Akasaki
Appl. Phys. Lett. Vol. 64 ( 0 ) page： 1377-9 1994
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Room-temperature low-threshold surface-stimulated emission by optical pumping from aluminum gallium nitride/gallium nitride (Al01Ga09N/GaN) double heterostructure Reviewed
H. Amano, N. Watanabe, N. Koide and I. Akasaki.
Jpn. J. Appl. Phys. Vol. 32 ( 0 ) page： L1000-L1002 1993
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Conductivity control of gallium nitride and fabrication of UV/blue GaN light emitting devices Reviewed
I. Akasaki, H. Amano, N. Koide M. Kotaki Mand K. Manabe
Phys. B Vol. 185 ( 0 ) page： 428-32 1993
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Electric properties of zinc-doped gallium nitride-type light emitting diode Reviewed
M. R. H. Khan, I. Akasaki, H. Amano, N. Okazaki and K. Manabe
Phys. B Vol. 185 ( 0 ) page： 480-4 1993