Papers - AMANO, Hiroshi
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 990-992 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3456-3458 1996
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3390-3392 1996
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Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 1255-1257 1996
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75Å GaN channel modulation doped field effect transistors Reviewed
Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2849-2851 1996
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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers Reviewed
Wetzel C, Haller E E, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2547/09/01 1996
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Resonant Raman scattering in hexagonal GaN Reviewed
Behr D, Wagner J, Schneider J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 2404/06/01 1996
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High-quality (Ga,In)N/GaN multiple quantum wells Reviewed
Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1403-5 1996
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Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Reviewed
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 68 ( 0 ) page： 1265-6 1996
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Free exciton emission in GaN Reviewed
Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I
Physical Review B: Condensed Matter Vol. 54 ( 0 ) page： 2518-2522 1996
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Free and bound excitons in thin wurtzite GaN Reviewed
Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1996
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Determination of the conduction band electron effective mass in hexagonal GaN Reviewed
M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1178-L1179 1995
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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1966/08/01 1995
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Photoluminescence of residual transition metal impurities in GaN Reviewed
Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1140-2 1995
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p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed
Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1112-13 1995
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Photoemission capacitance transient spectroscopy of n-type GaN Reviewed
Gotz W, Johnson N M, Street R A, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1340-2 1995
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Properties of the yellow luminescence in undoped GaN epitaxial layers Reviewed
. Hofmann D. M., Kovalev D., Steude G., Meyer B. K., Hoffmann A., Eckey L., Heitz R., Detchprom T., Amano H., Akasaki I.
Physical Review B: Condensed Matter Vol. 52 ( 0 ) page： 16702-6 1995
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Exciton dynamics in GaN Reviewed
. Bergman J.P., Monemar B., Amano H., Akasaki I.
Lietuvos Fizikos Zurnalas Vol. 35 ( 0 ) page： 569-574 1995
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GaN/GaInN/GaN double heterostructure light emitting diode fabricated using plasma-assisted molecular beam epitaxy Reviewed
Sakai Hiromitsu, Koide Takashi, Suzuki Hiroyuki, Yamaguchi Machiko, Yamasaki Shiro, Koike Masayoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1429-L1431 1995
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Direct patterning of the current confinement structure for p-type Column-III nitrides by low-energy electron beam irradiation treatment Reviewed
Inamori Masahiko, Sakai Hiromitsu, Tanaka Toshiyuki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 34 ( 0 ) page： 1190-3 1995