Papers - AMANO, Hiroshi
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Present and future of group III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
Institute of Physics Conference Series Vol. 145 ( 0 ) page： 19-22 1996
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Relaxation and recombination dynamics in GaN/Al2O3 epilayers Reviewed
Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 927-930 1996
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Remote plasma hydrogenation of Mg-doped GaN Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 1031-1034 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 935-938 1996
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Exciton dynamics in GaN Reviewed
Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 931-934 1996
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Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode Reviewed
Akasaki Isamu, Amano Hiroshi, Suemune ikuo
Institute of Physics Conference Series Vol. 142 ( 0 ) page： 2010/07/10 1996
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Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance Reviewed
Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H
J. Apl. Phys. Vol. 79 ( 0 ) page： 8007-8010 1996
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 990-992 1996
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3456-3458 1996
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 3390-3392 1996
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Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 69 ( 0 ) page： 1255-1257 1996
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Determination of the conduction band electron effective mass in hexagonal GaN Reviewed
M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki
Jpn. J. Appl. Phys.Part : Letters Vol. 34 ( 0 ) page： L1178-L1179 1995
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Characterization of residual transition metal ions in GaN and AlN Reviewed
Baur J., Kaufmann U., Kunzer M., Schneider J., Amano H., Akasaki I., Detchprohm T., Hiramatsu K.
Materials Science Forum Vol. 196-201 ( 0 ) page： 20333 1995
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Crystal growth of column III nitrides and their applications to short wavelength light emitters Reviewed
Akasaki I, Amano H
J. Crystal Growth Vol. 146 ( 0 ) page： 455-61 1995
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Magneto-optical investigation of the neutral donor bound exciton in GaN Reviewed
Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I
Solid State Communications Vol. 96 ( 0 ) page： 53-56 1995
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Exciton lifetimes in GaN and GaInN Reviewed
Harris C I, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 840-2 1995
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Surface-mode stimulated emission from optically pumped GaInN at room temperature Reviewed
Kim S T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 267-9 1995
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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1966/08/01 1995
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Photoluminescence of residual transition metal impurities in GaN Reviewed
Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Appl. Phys. Lett. Vol. 67 ( 0 ) page： 1140-2 1995
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p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed
Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 66 ( 0 ) page： 1112-13 1995