Papers - AMANO, Hiroshi
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Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 39 ( 0 ) page： L143-L145 2000
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Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant Reviewed
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 3388-3390 2000
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Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers Reviewed
Chow W W, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 1647-1649 2000
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Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Reviewed
Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R16318-R16321 2000
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Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R13302-R13305 2000
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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study Reviewed
Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R10607-R10609 2000
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Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN Reviewed
Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： 16572-16577 2000
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure Reviewed
Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K
Physical Review B: Condensed Matter and Materials Physics Vol. 61 ( 0 ) page： 8202-8206 2000
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Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 61 ( 0 ) page： 2159-2163 2000
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Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes Reviewed
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 39 ( 0 ) page： L387-L389 2000
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Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 76 ( 0 ) page： 876-878 2000
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Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series Vol. 166 ( 0 ) page： 471-474 2000
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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. Vol. 88 ( 0 ) page： 2677-2681 2000
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Multiple peak spectra from InGaN/GaN multiple quantum wells Reviewed
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 80 ( 0 ) page： 85-89 2000
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InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 77 ( 0 ) page： 1638-1640 2000
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Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer Reviewed
Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 31-34 1999
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Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements Reviewed
Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 335-339 1999
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Photoluminescence investigations of AlGaN on GaN epitaxial films Reviewed
Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 187-191 1999
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X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer Reviewed
Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 38 ( 0 ) page： 281-284 1999
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Energy loss rate of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 272 ( 0 ) page： 409-411 1999