Papers - AMANO, Hiroshi
-
Microscopic investigation of Al043Ga057N on sapphire Reviewed
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 38 ( 0 ) page: L1515-L1518 1999
-
Optical transitions of the Mg acceptor in GaN Reviewed
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 38 ( 0 ) page: L1422-L1424 1999
-
Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page: L1159-L1162 1999
-
GaN-based laser diode with focused ion beam-etched mirrors Reviewed
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 59 ( 0 ) page: 382-385 1999
-
Correlation of vibrational modes and DX-like centers in GaN:O Reviewed
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page: 109-112 1999
-
Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page: 43-45 1999
-
Energy loss rate of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 272 ( 0 ) page: 409-411 1999
-
Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer Reviewed
Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page: 683-689 1999
-
Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells Reviewed
Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page: 399-403 1999
-
Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density Reviewed
Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page: 147-151 1999
-
Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers Reviewed
Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page: 137-140 1999
-
GaN-based MQW light emitting diodes Reviewed
Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 162 ( 0 ) page: 31-35 1999
-
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. Vol. 85 ( 0 ) page: 7682-7688 1999
-
Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. Vol. 85 ( 0 ) page: 3786-3791 1999
-
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 75 ( 0 ) page: 4106-4108 1999
-
Improvement of far-field pattern in nitride laser diodes Reviewed
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N
Appl. Phys. Lett. Vol. 75 ( 0 ) page: 2960-2962 1999
-
Quantum-well width dependence of threshold current density in InGaN lasers Reviewed
Chow W W, Amano H, Takeuchi T, Han J
Appl. Phys. Lett. Vol. 75 ( 0 ) page: 244-246 1999
-
Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T
Appl. Phys. Lett. Vol. 74 ( 0 ) page: 356-358 1999
-
Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed
Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page: 3299-3301 1999
-
Optical investigations of AlGaN on GaN epitaxial films Reviewed
Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page: 2456-2458 1999