Papers - AMANO, Hiroshi
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Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers Reviewed
Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 137-140 1999
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GaN-based MQW light emitting diodes Reviewed
Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 162 ( 0 ) page： 31-35 1999
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Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. Vol. 85 ( 0 ) page： 7682-7688 1999
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Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. Vol. 85 ( 0 ) page： 3786-3791 1999
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Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 4106-4108 1999
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Improvement of far-field pattern in nitride laser diodes Reviewed
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 2960-2962 1999
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Quantum-well width dependence of threshold current density in InGaN lasers Reviewed
Chow W W, Amano H, Takeuchi T, Han J
Appl. Phys. Lett. Vol. 75 ( 0 ) page： 244-246 1999
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Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 356-358 1999
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Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed
Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 3299-3301 1999
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Optical investigations of AlGaN on GaN epitaxial films Reviewed
Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 74 ( 0 ) page： 2456-2458 1999
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Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride Reviewed
Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 60 ( 0 ) page： 1746-1751 1999
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Cooling dynamics of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 59 ( 0 ) page： R7797-R7800 1999
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GaN-based laser diode with focused ion beam-etched mirrors Reviewed
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 59 ( 0 ) page： 382-385 1999
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Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy Reviewed
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L984-L986 1999
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Strain modification of GaN in AlGaN/GaN epitaxial films Reviewed
Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L498-L500 1999
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Low-intensity ultraviolet photodetectors based on AlGaN Reviewed
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L487-L489 1999
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Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures Reviewed
Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 38 ( 0 ) page： L163-L165 1999
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy Vol. 2 ( 0 ) page： 693-694 1998
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures Reviewed
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth Vol. 189/190 ( 0 ) page： 758-762 1998
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Room-temperature photoluminescence linewidth versus material quality of GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum Vol. 264-268 ( 0 ) page： 1319-1322 1998