Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Observation of 2D-magnesium-intercalated gallium nitride superlattices. Reviewed

Wang J, Cai W, Lu W, Lu S, Kano E, Agulto VC, Sarkar B, Watanabe H, Ikarashi N, Iwamoto T, Nakajima M, Honda Y, Amano H

Nature Vol. 631 ( 8019 ) page： 67 - 72 2024.7

Language：English Publishing type：Research paper (scientific journal) Publisher：Nature

Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms1,2, rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society3–5. However, the details of the interplay between GaN and Mg have remained largely unknown6–11. Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials12. The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices13.

DOI： 10.1038/s41586-024-07513-x

15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W Reviewed

Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 71 ( 3 ) page： 1408 - 1415 2024.3

Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Transactions on Electron Devices

The p+-n-n - n+ structure, known as Hi-Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve the output power and efficiency. The 15 GHz GaN Hi-Lo IMPATT diode was designed according to the Scharfetter and Gummel model under realistic conditions, suppressing the tunneling current (<10-4 cm2) and breakdown voltage (< 400 V). Even in such conditions, the calculated efficiency was higher than that of the p+-n abrupt junction structure and the improvement of RF characteristics was expected. The fabricated GaN Hi-Lo IMPATT diodes showed a clear avalanche breakdown and a pulsed microwave oscillation in the frequency range from 15 to 17 GHz. The maximum peak output power of 25.5 W and the efficiency of 2% were achieved, showing the highest values on microwave band GaN IMPATT diodes, and we confirmed that the Hi-Lo structure is effective for the high-power and high-efficiency operation of GaN IMPATT diodes.

DOI： 10.1109/TED.2023.3345822

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping Reviewed

Kumabe T., Yoshikawa A., Kawasaki S., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

IEEE Transactions on Electron Devices 2024

Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Transactions on Electron Devices

Nearly ideal vertical Al<inline-formula> <tex-math notation="LaTeX">$_{\textit{x}}$</tex-math> </inline-formula>Ga<inline-formula> <tex-math notation="LaTeX">$_{\text{1}-\textit{x}}$</tex-math> </inline-formula>N (<inline-formula> <tex-math notation="LaTeX">$\text{0.7} \leq \textit{x} < \text{1.0}$</tex-math> </inline-formula>) p-n diodes are fabricated on an aluminum nitride (AlN) substrate. Distributed polarization doping (DPD) was employed for both p-type and n-type layers of the p-n junction, instead of conventional impurity doping, to overcome the major bottleneck of AlN-based material: the control of conductivity. Capacitance–voltage measurements revealed that the net charge concentration agreed well with the DPD charge concentration expected from the device layer structure. The fabricated devices exhibited a low turn-on voltage of 6.5 V, a low differential specific ON-resistance of 3 M<inline-formula> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula>, electroluminescence (maximum at 5.1 eV), and an ideality factor of 2 for a wide range of temperatures (room temperature—573 K). Moreover, the breakdown electric field was 7.3 MV cm<inline-formula> <tex-math notation="LaTeX">$^{-\text{1}}$</tex-math> </inline-formula>, which was almost twice as high as the reported critical electric field of GaN at the same doping concentration. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

DOI： 10.1109/TED.2024.3367314

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz Reviewed

Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

IEEE ELECTRON DEVICE LETTERS Vol. 44 ( 8 ) page： 1328 - 1331 2023.8

Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Electron Device Letters

An experimental study on the effects of junction capacitance and current density on the oscillation characteristics of GaN single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes were carried out using GaN p+-n abrupt junction diodes of various diameters, 200, 150, and 100 μ m , with a depletion layer width of 2 μ m. The fabricated diodes showed a clear avalanche breakdown at 315 V and a pulsed microwave oscillation with a peak output power exceeding 30 dBm. The oscillation frequency depended on junction diameter and current density. It was widely modulated from 8.56 to 21.1 GHz with decreasing junction diameter and increasing current density. The highest oscillation frequency was obtained with a current density of 13.8 kA/cm2 and a junction diameter of 100 μ m. A numerical calculation based on Read-type small-signal theory was carried out and found to well explain the experimental results.

DOI： 10.1109/LED.2023.3285938

Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes Reviewed

Kwon, W; Kawasaki, S; Watanabe, H; Tanaka, A; Honda, Y; Ikeda, H; Iso, K; Amano, H

IEEE ELECTRON DEVICE LETTERS Vol. 44 ( 7 ) page： 1172 - 1175 2023.7

Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Electron Device Letters

The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN) vertical p-n diode was investigated in various temperature range, and it was compared with that of the p-n diode having a threading dislocation density (TDD) of around 10^6 cm -2. The reverse leakage current was increased markedly by increasing the temperature from 400 K, the dominant mechanism was explained by thermionic and Poole-Frenkel emissions for TD-free and high-TDD p-n diodes, respectively. At high temperatures and electric fields, the leakage current of the high TDD p-n diode showed 2 times higher than the TD-free p-n diode. These results indicate that the performance of vertical GaN devices, especially when employed at high temperatures and electric fields, can be enhanced by removing TDs.

DOI： 10.1109/LED.2023.3274306

Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN Reviewed

Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS Vol. 122 ( 25 ) 2023.6

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

We investigated the hole mobility limiting factors in dopant-free p-type distributed polarization-doped (DPD) AlGaN layers by an experimental method. p-DPD AlGaN exhibited a higher hole mobility than GaN:Mg with a similar room temperature hole concentration across all temperature ranges owing to the absence of ionized impurity scattering. In addition, unlike in n-DPD AlGaN, alloy scattering was not always critical in p-DPD AlGaN. The extracted alloy scattering potential was only 0.3 eV, which resulted in a reduced effect of alloy scattering and originated from a small valence band offset in the GaN/AlN heterojunction system. The results suggest that DPD principally enables the fabrication of low-resistance p-type nitride semiconductor thin films as a result of the high hole concentration and high hole mobility.

DOI： 10.1063/5.0155363

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications Reviewed

Cai, WT; Furusawa, Y; Wang, J; Park, JH; Liao, YQ; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 21 ) 2022.11

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat GaN seeds formed in sub-micrometer-scale openings in a SiNx mask. The platelets were highly uniform without any dislocations or pits, with an atomically flat (0001) surface. The typical height was ∼120 nm, which significantly exceeded the normal critical layer thickness of a c-plane InGaN film. The strain state was comprehensively characterized by microbeam x-ray diffraction and transmission electron microscopy. Due to a gradual elastic relaxation of strain, the In content increased almost linearly from bottom to top because of the strong strain-dependent In incorporation. These platelets can serve as high-quality strain-relaxed templates for long wavelength micro-light-emitting diodes.

DOI： 10.1063/5.0120723

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy Reviewed

Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

JOURNAL OF APPLIED PHYSICS Vol. 132 ( 14 ) 2022.10

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Applied Physics

The precise control of Mg concentration ([Mg]) in p-type GaN layers from 2.3 × 1016 to 2.0 × 1019 cm-3 was demonstrated by halide vapor phase epitaxy (HVPE) on n-type GaN (0001) freestanding substrates. [Mg] in GaN layers could be controlled well by varying the input partial pressure of MgCl2 formed by a chemical reaction between MgO solid and HCl gas under the thermodynamic equilibrium condition. In the sample with [Mg] of 2.0 × 1019 cm-3, a step-bunched surface was observed because the surface migration of Ga adatoms was enhanced by the surfactant effect of Mg atoms. The samples show high structural qualities determined from x-ray rocking curve measurements. The acceptor concentration was in good agreement with [Mg], indicating that almost all Mg atoms act as acceptors. The compensating donor concentrations in the samples were higher than the concentrations of Si, O, and C impurities. We also obtained the Mg acceptor level at a sufficiently low net acceptor concentration of 245 ± 2 meV. These results show that the HVPE method is promising for fabricating GaN vertical power devices, such as n-channel metal-oxide-semiconductor field-effect transistors.

DOI： 10.1063/5.0122292

Laser slice thinning of GaN-on-GaN high electron mobility transistors Reviewed

Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 7363 2022.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Scientific Reports

As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate processing, we could only show that the GaN substrate could be sliced by a laser and that the sliced GaN substrate could be reused. In this study, we newly investigated the applicability of this method as a device fabrication process. We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. Even when the HEMTs were thinned by laser slicing to a thickness of 50 mm after completing the fabrication process, no significant fracture was observed in these devices, and no adverse effects of laser-induced damage were observed on electrical characteristics. This means that the laser slicing process can be applied even after device fabrication. It can also be used as a completely new semiconductor process for fabricating thin devices with thicknesses on the order of 10 mm, while significantly reducing the consumption of GaN substrates.

DOI： 10.1038/s41598-022-10610-4

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 4 ) 2022.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode, fabricated on a single-crystal AlN substrate when operating at 5 °C. The threshold current density and device series resistance were reduced by improvements to the epitaxial structure and electrode arrangement. A peak wavelength of 274.8 nm was observed for lasing at a drive current over 110 mA, which corresponded to a threshold current density of 3.7 kA cm-2. The operating voltage at the threshold current was as low as 9.6 V.

DOI： 10.35848/1882-0786/ac6198

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

Lu, S; Deki, M; Wang, J; Ohnishi, K; Ando, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS Vol. 119 ( 24 ) 2021.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 ω cm2 is realized on p-GaN ([Mg] = 1.3 × 1017 cm-3). The contact resistance of p-type GaN with higher Mg concentration ([Mg]=1.0 × 1019 cm-3) can also be reduced to 2.8 × 10-5 ω cm2. A localized contact layer is realized without any etching or regrowth damage. The mechanism underlying this reduced contact resistance is studied by scanning transmission electron microscopy with energy dispersive x-ray spectroscopy and secondary ion mass spectrometry, representing a mutual diffusion of Ga and Mg atoms on the interface. Reductions in the barrier height and surface depletion width with the nitrogen-annealed Mg layer are confirmed by XPS and Hall effect measurements qualitatively.

DOI： 10.1063/5.0076764

Smart-cut-like laser slicing of GaN substrate using its own nitrogen Reviewed

Tanaka, A; Sugiura, R; Kawaguchi, D; Yui, T; Wani, Y; Aratani, T; Watanabe, H; Sena, H; Honda, Y; Igasaki, Y; Amano, H

SCIENTIFIC REPORTS Vol. 11 ( 1 ) page： 17949 2021.9

Language：English Publishing type：Research paper (scientific journal) Publisher：Scientific Reports

We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.

DOI： 10.1038/s41598-021-97159-w

Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

Idei, M; Sato, D; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 43 ( 3 ) 2025.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Vacuum Science and Technology B

The dependence of the quantum efficiency (QE) of a Cs/O-activated negative-electron-affinity (NEA) state InGaN photocathode on threading dislocation density (TDD) was investigated. InGaN photocathodes with different TDDs were grown on sapphire and GaN substrates by metal-organic vapor-phase epitaxy (MOVPE). The TDDs were 1 × 109 cm−2 on the sapphire substrate and less than 5 × 106 cm−2 on the GaN substrate. After the activation of the NEA state of InGaN photocathode surfaces by Cs/O, the QEs were 1.1% on the sapphire substrate and 0.91% on the GaN substrate. Despite a TDD difference of approximately two orders of magnitude, the QEs were comparable. The results show that the QE is not limited by the high TDD in the InGaN photocathode.

DOI： 10.1116/6.0004199

Characterization of Quaternary Al<sub>x</sub>Ga<sub>1-(x+y)</sub>In<sub>y</sub>N (<i>x</i> ≈ 0.5 and <i>y</i> ≤ 0.12) Metalorganic Vapor Phase Epitaxy Growth Focusing on Unintentionally Incorporated Impurities Open Access

Yamada, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 2025.3

Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi (B): Basic Research

Quaternary AlGaInN has attracted attention because its physical properties such as bandgap, polarization, and lattice constant can be independently changed by controlling the AlN, GaN, and InN mole fractions. However, the complexity of crystal growth is problematic, and reducing unintentionally incorporated impurities that cause carrier scattering and compensation is crucial. In this study, about 30-nm-thick AlxGa1−(x+y)InyN (x ≈ 0.5 and y ≤ 0.12) is grown on GaN on sapphire by metalorganic vapor phase epitaxy under various growth conditions to systematically analyze the relationship between growth conditions and oxygen and carbon concentrations ([O] and [C], respectively) as well as surface morphology and to elucidate the factors affecting [O] and [C]. [O] is decreased in samples grown at low growth rates and high growth temperatures. This can be attributed to the realization of a smooth surface morphology free of V-pits and trench defects. [C] is decreased in samples grown at a low total of group III source flow rates. The [C] of UID-GaN and that of AlGaInN at various TMI flow rates suggest that TMA mainly affects [C]. Therefore, the key to impurity reduction is to obtain a smooth surface morphology and to promote the adequate decomposition of TMA.

DOI： 10.1002/pssb.202500028

Vertical GaN p-n diode with deeply etched mesas by contactless photo-electrochemical etching Open Access

Toyoda, H; Kwon, W; Watanabe, H; Tsukamoto, R; Furusawa, Y; Itoh, Y; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 18 ( 3 ) 2025.3

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

GaN p-n diodes were fabricated by contactless photo-electrochemical (PEC) etching, and their electrical characteristics were evaluated. A high vertical etching rate of 80 nm min−1, which is usable for device fabrication etching processes, was achieved using a H₃PO₄ based electrolyte containing S₂O₈2⁻ ions and intense UV light. The sidewalls after etching were perpendicular to the substrate owing to the directivity of UV light. Vertical GaN p-n diodes with deeply etched mesas were fabricated by contactless PEC etching and avalanche breakdown was confirmed. The results point to an alternative method of fabricating high-performance GaN power devices.

DOI： 10.35848/1882-0786/adbc43

Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment

Ishiguro, M; Sekiyama, K; Baratov, A; Maeda, S; Igarashi, T; Tajuddin, NSBA; Islam, N; Terai, S; Yamamoto, A; Kuzuhara, M; Sarkar, B; Amano, H; Asubar, JT

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 2 ) 2025.2

Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment Open Access

Kwon, W; Itoh, Y; Tanaka, A; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 18 ( 1 ) 2025.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

A vertical GaN p-n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 1017-3 × 1018 cm−3 by annealing with an AlN capping layer at 1300 ℃ for 5 min under atmospheric N2 pressure. The PND and JBSD exhibited specific on-resistances of 2.3-2.6 mΩ cm2 and repeatable breakdowns at 1.95 kV without degradation in breakdown voltage or leakage current. Additionally, the JBSD achieved a high-on/off ratio of 9.1 × 107 between 1.5 V and −1 kV.

DOI： 10.35848/1882-0786/ada71a

Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy Reviewed

Ohnishi K., Hamasaki K., Nitta S., Fujimoto N., Watanabe H., Honda Y., Amano H.

Journal of Crystal Growth Vol. 648 2024.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl2 and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl2 and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 1019 cm−3 is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

DOI： 10.1016/j.jcrysgro.2024.127923

InGaN-based blue and red micro-LEDs: Impact of carrier localization

Park J.H., Pristovsek M., Han D.P., Kim B., Lee S.M., Hanser D., Parikh P., Cai W., Shim J.I., Lee D.S., Seong T.Y., Amano H.

Applied Physics Reviews Vol. 11 ( 4 ) 2024.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Reviews

Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization. The external quantum efficiency (EQE) of blue μLEDs decreases with size regardless of sidewall conditions, whereas that of red μLEDs is insignificant due to carrier localization. Atomic probe tomography examination of 30%, 15%, and 7.5% indium-concentrated InGaN layers used in red μLEDs shows that higher indium concentrations result in greater indium fluctuations, which promote carrier localization and thus shorten the diffusion length of carriers. Finally, by observing the peak wavelength of electroluminescence and the current density at peak EQE for both blue and red μLEDs, we find that radiative recombination rate in μLEDs is likely to be chip size dependent.

DOI： 10.1063/5.0195261

(Ultra)wide bandgap semiconductor heterostructures for electronics cooling

Cheng Z., Huang Z., Sun J., Wang J., Feng T., Ohnishi K., Liang J., Amano H., Huang R.

Applied Physics Reviews Vol. 11 ( 4 ) 2024.12

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Reviews

The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.

DOI： 10.1063/5.0185305

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