Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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Progress and prospect of growth of wide-band-gap group III nitrides

Hiroshi Amano

Topics in Applied Physics Vol. 133 page： 1 - 9 2017

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Springer Verlag

GaAs, InP, and their related compound semiconductors can be grown on native substrates, whereas such growth was not possible for group III nitride semiconductors in the 1970s and 1980s. Despite this drawback, researchers were able to use novel functions of group III nitride semiconductors by growing their thin films on nonnative substrates such as sapphire SiC and Si.

DOI： 10.1007/978-981-10-3755-9_1

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From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

Amano Hiroshi

HANDBOOK OF SOLID-STATE LIGHTING AND LEDS page： 3 - 11 2017

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy Reviewed

Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 56 page： 015504 2016.12

Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed

Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunaria, Akira Tamura, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 454 page： 114-120 2016.11

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE Reviewed

Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 447 page： 55-61 2016.8

Language：English Publishing type：Research paper (scientific journal)

The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology.

DOI： 10.1016/j.jcrysgro.2016.05.008

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed

Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics Vol. 55 page： 082101/1-7 2016.8

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy Reviewed

Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

PHYSICAL REVIEW Vol. B94 page： 045206/1-8 2016.7

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics Vol. 55 page： 05FJ02/1-3 2016.5

Language：English Publishing type：Research paper (scientific journal)

Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Reviewed

Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Vol. 55 ( 5S ) page： 05FL03/1-5 2016.5

Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed

Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FH05/1-4 2016.5

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed

Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

Nanoscale Research Letters Vol. 11 2016.4

Language：English Publishing type：Research paper (scientific journal)

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

DOI： 10.1186/s11671-016-1441-6

Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed

Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics, Vol. 55 ( 5S ) page： 05FB06/1-5 2016.4

Growth of semipolar (1-101) high-indium-content InGaN quantum well using InGaN tilting layer on Si(001) Reviewed

Maki Kushimoto, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FA10/1-4 2016.4

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FD03/1-4 2016.4

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

Hiroshi Amano

Progress in Crystal Growth and Characterization of Materials Vol. 62 page： 126–135 2016.4

Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

Vol. 55 ( 5S ) page： 05FG03/1-8 2016.4

Language：English Publishing type：Research paper (scientific journal)

We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed

Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 page： 05FF03/1-5 2016.3

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FM01/1-4 2016.2

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

Japanese Journal of Applied Physics Rapid Communications Vol. 55 ( 3 ) page： 030306/1-4 2016.2

Language：English Publishing type：Research paper (scientific journal)

Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed

Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 49 ( 2 ) page： 025103 2016.1

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Papers - AMANO, Hiroshi