Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

Division display 461 - 480 of about 855 ／ All the affair displays >>

Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes Reviewed

Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi,Hiroshi Amano et al

Applied Physics Express Vol. 3 ( 6 ) page： 061004/1-061004/3 2010.6

Language：English Publishing type：Research paper (scientific journal)

We report on the fabrication and characterization of AlGaN-based deep UV light-emitting diodes (LEDs) with the emission wavelength ranging from 255-280 nm depending on the Al compn. of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the Al2O3 substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extn.

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

Journal of Crystal Growth Vol. 312 ( 21 ) page： 3131-3135. 2010.6

Language：English Publishing type：Research paper (scientific journal)

The elec. and optical properties of Mg-doped a- and c-plane GaN films grown by MOVPE were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concns. are above 1 × 1020 cm-3 and 5 × 1019 cm-3, resp. The elec. properties also indicate the existence of compensating donors because the hole concn. decreases at such high Mg doping concns. In addn., we estd. the ND/NA compensation ratio of a- and c-plane GaN by variable-temp. Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.

Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO Reviewed

Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

Applied Physics Letters Vol. 96 ( ７ ) page： 071909/1-071909/3 2010.3

Language：English Publishing type：Research paper (scientific journal)

The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium content in the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes. For indium content below 0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[11-20] are obsd. parallel to the [0001] direction. For indium content above 0.12, generation of basal-plane stacking faults relieve the compressive stress along the 0001 direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Diamond and Related Materials Vol. 19 ( 0 ) page： 131-133 2010.2

Language：English Publishing type：Research paper (scientific journal)

We investigate the microstructures of domain boundaries in an AlN layer grown on a (001) diamond substrate by metal-org. vapor phase epitaxy. The AlN layer has a two-domain structure with crystal orientation along either <112-0> AlN [named by AlNI domain] or <101-0> AlN [named by AlNII domain] parallel to [110] direction of diamond. The AlNI and AlNII domains are not atomically bonded at two-domain boundary from initial to final step of growth, while an edge-type dislocation is generated at single-domain boundary (SDB). In addn., an inversion AlNI domain [named by AlNI*] is randomly-ordered at the initial stage of the coalescence between the AlNI domains. The AlNI* is easily terminated with increasing the thickness of AlNI domain. The inversion domain boundary changes to the edge-type dislocation at the SDB with further growth, which reduces the defect d. in the AlNI domains.

High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient Reviewed

Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Physica Status Solidi A: Vol. 207 ( 0 ) page： 1393-1396 2010

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

Journal of Crystal Growth Vol. 312 ( 21 ) page： 3131-3135 2010

Defects in highly Mg-doped AlN Reviewed

Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Physica Status Solidi A Vol. 207 ( 0 ) page： 1299-1301 2010

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Journal of Crystal Growth Vol. 312 ( 0 ) page： 368-372 2010

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Reviewed

Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

Journal of Crystal Growth Vol. 312 ( 0 ) page： 1325-1328 2010

P-type doping and defect generation in Group III nitride semiconductors Invited Reviewed

Amano, Hiroshi; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

Nippon Kessho Seicho Gakkaishi Vol. 36 ( 3 ) page： 200-204 2009.3

Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed

Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

Journal of Applied Physics Vol. 105 ( 0 ) page： 083533/1-083533/6 2009

Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) Reviewed

Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Physica Status Solidi B: Vol. 246 ( 0 ) page： 1188-1190 2009

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters Reviewed

Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

Physica Status Solidi C Vol. 6 ( 0 ) page： 2621-2625 2009

Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films Reviewed

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.

Journal of Applied Physics Vol. 105 ( 0 ) page： 063708/1-063708/9 2009

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Reviewed

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2923-2925 2009

Evidence for two Mg related acceptors in GaN Reviewed

Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al

Physical review letters Vol. 102 ( 0 ) page： 235501/1-235501/4 2009

Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed

Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

Opto-Electronics Review Vol. 17 ( 0 ) page： 293-299 2009

Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed

Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2926-2928 2009

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed

Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

Physica Status Solidi A Vol. 206 ( 0 ) page： 1199-1204 2009

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed

Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal of Crystal Growth Vol. 311 ( 0 ) page： 2929-2932 2009

　 PREV - NEXT 　

<AMANO, Hiroshi>

Papers - AMANO, Hiroshi