Papers - AMANO, Hiroshi
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Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed
Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi
Journal of Applied Physics Vol. 105 ( 0 ) page： 083533/1-083533/6 2009
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Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Physica Status Solidi B: Vol. 246 ( 0 ) page： 1188-1190 2009
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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters Reviewed
Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Physica Status Solidi C Vol. 6 ( 0 ) page： 2621-2625 2009
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Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films Reviewed
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.
Journal of Applied Physics Vol. 105 ( 0 ) page： 063708/1-063708/9 2009
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Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Reviewed
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2923-2925 2009
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Evidence for two Mg related acceptors in GaN Reviewed
Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al
Physical review letters Vol. 102 ( 0 ) page： 235501/1-235501/4 2009
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Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed
Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.
Opto-Electronics Review Vol. 17 ( 0 ) page： 293-299 2009
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Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed
Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2926-2928 2009
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High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al
Physica Status Solidi A Vol. 206 ( 0 ) page： 1199-1204 2009
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InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed
Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2929-2932 2009
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
Applied Physics Express Vol. 2 ( 0 ) page： 041002/1-041002/3 2009
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Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2860-2863 2009
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One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2887-2890 2009
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Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed
Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu
Physica Status Solidic Vol. 6 ( 0 ) page： 1416-1419 2009
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Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2850-2852 2009
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Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Express Vol. 2 ( 0 ) page： 061004/1-061004/3 2009
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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates Reviewed
Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira
J. Crystal Growth Vol. 310 ( 0 ) page： 2308-2313 2008
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN Reviewed
Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 310 ( 0 ) page： 2326-2329 2008
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. Reviewed
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1906-1909 2008
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 5 ( 0 ) page： 1768-1770 2008