Papers - AMANO, Hiroshi
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High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient Reviewed
Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Physica Status Solidi A: Vol. 207 ( 0 ) page： 1393-1396 2010
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Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed
Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu
Journal of Crystal Growth Vol. 312 ( 21 ) page： 3131-3135 2010
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Defects in highly Mg-doped AlN Reviewed
Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Physica Status Solidi A Vol. 207 ( 0 ) page： 1299-1301 2010
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Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Reviewed
Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi
Journal of Crystal Growth Vol. 312 ( 0 ) page： 368-372 2010
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Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Reviewed
Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi
Journal of Crystal Growth Vol. 312 ( 0 ) page： 1325-1328 2010
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P-type doping and defect generation in Group III nitride semiconductors Invited Reviewed
Amano, Hiroshi; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu
Nippon Kessho Seicho Gakkaishi Vol. 36 ( 3 ) page： 200-204 2009.3
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Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed
Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi
Journal of Applied Physics Vol. 105 ( 0 ) page： 083533/1-083533/6 2009
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Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Physica Status Solidi B: Vol. 246 ( 0 ) page： 1188-1190 2009
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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters Reviewed
Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Physica Status Solidi C Vol. 6 ( 0 ) page： 2621-2625 2009
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Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films Reviewed
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.
Journal of Applied Physics Vol. 105 ( 0 ) page： 063708/1-063708/9 2009
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Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Reviewed
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2923-2925 2009
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Evidence for two Mg related acceptors in GaN Reviewed
Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al
Physical review letters Vol. 102 ( 0 ) page： 235501/1-235501/4 2009
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Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed
Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.
Opto-Electronics Review Vol. 17 ( 0 ) page： 293-299 2009
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Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed
Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2926-2928 2009
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High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al
Physica Status Solidi A Vol. 206 ( 0 ) page： 1199-1204 2009
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InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed
Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2929-2932 2009
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
Applied Physics Express Vol. 2 ( 0 ) page： 041002/1-041002/3 2009
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Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2860-2863 2009
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One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth Vol. 311 ( 0 ) page： 2887-2890 2009
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Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed
Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu
Physica Status Solidic Vol. 6 ( 0 ) page： 1416-1419 2009