研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 161 - 180 件目／全件表示 >>

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms 査読有り

Yamamoto, K; Nakano, K; Tanaka, A; Honda, Y; Ando, Y; Ogura, M; Matsumoto, M; Anada, S; Ishikawa, Y; Amano, H; Hirayama, T

MICROSCOPY 69 巻 ( 1 ) 頁： 1 - 10 2020年2月

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism 査読有り

Yang, X; Nitta, S; Pristovsek, M; Liu, YH; Liao, YQ; Kushimoto, M; Honda, Y; Amano, H

2D MATERIALS 7 巻 ( 1 ) 2020年1月

Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

Sato, D; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 巻 ( 1 ) 2020年1月

マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

小島一信, 長澤陽祐, 平野光, 一本松正道, 杉江隆一, 本田善央, 天野浩, 赤﨑勇, 秩父重英

日本結晶成長学会誌 47 巻 ( 3 ) 頁： n/a 2020年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：日本結晶成長学会

The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.

DOI： 10.19009/jjacg.47-3-04

CiNii Research

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 2020-September 巻頁： 349 - 352 2020年

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire 査読有り

Dinh, DV; Hu, N; Amano, H; Honda, Y; Pristovsek, M

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34 巻 ( 12 ) 2019年12月

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature 査読有り

M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F. Chichibu, K. J. Chen, H. Amano

Physica Status Solidi (b) 257 巻頁： 1900554 - 1900554 2019年12月

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macro-steps using cathodoluminescence spectroscopy 査読有り

Journal of Applied Physics 126 巻 ( 21 ) 頁： 215703 1 - 10 2019年12月

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. 査読有り

Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

Sensors (Basel, Switzerland) 19 巻 ( 23 ) 2019年11月

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties 査読有り

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

SCIENTIFIC REPORTS 9 巻 ( 1 ) 頁： 15802 2019年11月

V-shaped dislocations in a GaN epitaxial layer on GaN substrate 査読有り

Tanaka, A; Nagamatsu, K; Usami, S; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Bockowski, M; Amano, H

AIP ADVANCES 9 巻 ( 9 ) 2019年9月

Precise Measurement of Carrier Concentrations in n-Type GaN by Phase-Shifting Electron Holography

Kazuo Yamamoto, Kiyotaka Nakano, Atsushi Tanaka, Yoshio Honda, Yuto Ando, Masaya Ogura, Miko Matsumoto, Satoshi Anada, Yukari Ishikawa, Hiroshi Amano, Tsukasa Hirayama

Microscopy and Microanalysis 25 巻 ( S2 ) 頁： 50 - 51 2019年8月

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition 査読有り

Matsumoto, K; Ono, T; Honda, Y; Torigoe, K; Kushimoto, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 7 ) 2019年7月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth 査読有り

Ye, Z; Nitta, S; Nagamatsu, K; Fujimoto, N; Kushimoto, M; Deki, M; Tanaka, A; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 516 巻頁： 63 - 66 2019年6月

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current 査読有り国際誌

Usami, S; Mayama, N; Toda, K; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 114 巻 ( 23 ) 2019年6月

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth 査読有り

Liu, Q; Fujimoto, N; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Frontiers of Nitride Semiconductor Research FOREWORD 査読有り

Chichibu, SF; Kumagai, Y; Kojima, K; Deura, M; Akiyama, T; Arita, M; Fujioka, H; Fujiwara, Y; Hara, N; Hashizume, T; Hirayama, H; Holmes, M; Honda, Y; Imura, M; Ishii, R; Ishitani, Y; Iwaya, M; Kamiyama, S; Kangawa, Y; Katayama, R; Kawakami, Y; Kawamura, T; Kobayashi, A; Kuzuhara, M; Matsumoto, K; Mori, Y; Mukai, T; Murakami, H; Murotani, H; Nakazawa, S; Okada, N; Saito, Y; Sakai, A; Sekiguchi, H; Shiozaki, K; Shojiki, K; Suda, J; Takeuchi, T; Tanikawa, T; Tatebayashi, J; Tomiya, S; Yamada, Y

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors 査読有り国際誌

Uemura, K; Deki, M; Honda, Y; Amano, H; Sato, T

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SC ) 頁： SCCD20-1 - SCCD20-6 2019年6月

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability 査読有り国際誌

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates 査読有り国際誌

Usami, S; Tanaka, A; Fukushima, H; Ando, Y; Deki, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

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