研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 21 - 40 件目／全件表示 >>

Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

Deki, M; Kawarabayashi, H; Honda, Y; Amano, H

AIAA AVIATION 2023 FORUM 2023年

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars 査読有り

Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

SCIENTIFIC REPORTS 12 巻 ( 1 ) 頁： 21208 2022年12月

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes 査読有り

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 22 ) 2022年11月

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy 査読有り

Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 8 ) 2022年8月

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. 査読有り

Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

Scientific reports 12 巻 ( 1 ) 頁： 8175 2022年5月

Laser slice thinning of GaN-on-GaN high electron mobility transistors 査読有り

Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

SCIENTIFIC REPORTS 12 巻 ( 1 ) 頁： 7363 2022年5月

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer 査読有り

Park, JH; Cai, W; Cheong, H; Ushida, Y; Lee, DH; Ando, Y; Furusawa, Y; Honda, Y; Lee, DS; Seong, TY; Amano, H

JOURNAL OF APPLIED PHYSICS 131 巻 ( 15 ) 2022年4月

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process 査読有り

Liao, YQ; Chen, T; Wang, J; Cai, WT; Ando, YT; Yang, X; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

APPLIED PHYSICS LETTERS 120 巻 ( 12 ) 2022年3月

Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium 査読有り

Wang, J; Lu, S; Cai, WT; Kumabe, T; Ando, Y; Liao, YQ; Honda, Y; Xie, YH; Amano, H

IEEE ELECTRON DEVICE LETTERS 43 巻 ( 1 ) 頁： 150 - 153 2022年1月

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources 査読有り

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻頁： 797 - 807 2022年

Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions 査読有り

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

IEEE TRANSACTIONS ON ELECTRON DEVICES 68 巻 ( 12 ) 頁： 6059 - 6064 2021年12月

Cyclotron production of 225Ac from an electroplated 226Ra target. 査読有り

Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR

European journal of nuclear medicine and molecular imaging 49 巻 ( 1 ) 頁： 279 - 289 2021年12月

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) 査読有り

Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 119 巻 ( 20 ) 2021年11月

NEA活性化方法におけるInGaNフォトカソードの電子放出特性の違い査読有り

鹿島将央, 佐藤大樹, 小泉淳, 飯島北斗, 西谷智博, 本田善央, 天野浩, 目黒多加志

応用物理学会学術講演会講演予稿集 2021.1 巻 ( 0 ) 頁： 1347 - 1347 2021年2月

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs 査読有り

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 巻頁： 570 - 581 2021年

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures 査読有り国際誌

Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁： . 2020年7月

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO 査読有り国際誌

Ohnishi, K; Amano, Y; Fujimoto, N; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 13 巻 ( 6 ) 頁： . 2020年6月

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices 査読有り

Liu, Q; Fujimoto, N; Shen, J; Nitta, S; Tanaka, A; Honda, Y; Sitar, Z; Bockowski, M; Kumagai, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 539 巻頁： . 2020年6月

Impact of high-temperature implantation of Mg ions into GaN 査読有り国際誌

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 5 ) 頁： . 2020年5月

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature 査読有り

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Chen, KJ; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月

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