研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 401 - 420 件目／全件表示 >>

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁： 01AD04_1-01AD04_3 2011年1月

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express 4 巻 ( 1 ) 頁： 01210_1-012105_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁： 01AD04_1-01AD04_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express 4 巻 ( 1 ) 頁： 01210_1-012105_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁： 01AD04_1-01AD04_3 2011年1月

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate 査読有り

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes 査読有り

Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express 4 巻 ( 1 ) 頁： 01210_1-012105_3 2011年

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

SPIE 7939 巻頁： 79391X 2011年

IQE and EQE of the nitride-based UV/DUV LEDs 査読有り

H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2011年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：IEEE

Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

Web of Science

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

HVPE growth of a -plane GaN on a GaN template (110)Si substrate 査読有り

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) 7 巻 ( 7-8 ) 頁： 1760–1763 2010年7月

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