研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 241 - 260 件目／全件表示 >>

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode 査読有り国際誌

Jung, BO; Bae, SY; Lee, S; Kim, SY; Lee, JY; Honda, Y; Amano, H

NANOSCALE RESEARCH LETTERS 11 巻 ( 1 ) 頁： 215 2016年4月

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations 査読有り

Lee, S; Honda, Y; Amano, H; Jang, J; Nam, O

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 3 ) 2016年3月

記述言語：英語掲載種別：研究論文（学術雑誌）

Using a SiN<inf>x</inf>insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in p–i–n InGaN/GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN<inf>x</inf>insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN<inf>x</inf>insertion layer. However, the quantum confined stark effect was almost negligible in both the samples. Electrical properties measurement showed reduced saturation current and increased shunt resistance in the sample with SiN<inf>x</inf>insertion layer due to the reduced dislocation density. By comparing these results and using a numerical model, the influence of the dislocation density on the different photovoltaic properties such as open-circuit voltage and fill factor has been confirmed.

DOI： 10.7567/JJAP.55.030306

Web of Science

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells 査読有り国際誌

Lee, S; Honda, Y; Amano, H

JOURNAL OF PHYSICS D-APPLIED PHYSICS 49 巻 ( 2 ) 2016年1月

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer 査読有り

Sun, Z; Ohta, A; Miyazaki, S; Nagamatsu, K; Lee, H; Olsson, M; Ye, Z; Deki, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 1 ) 2016年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two-dimensional growth step, resulting in 1.2-µm crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2–3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices.

DOI： 10.7567/JJAP.55.010303

Web of Science

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications 査読有り国際誌

Hirano, A; Nagasawa, Y; Iypommatsu, M; Aosaki, K; Honda, Y; Amano, H; Akasaki, I

UV AND HIGHER ENERGY PHOTONICS: FROM MATERIALS TO APPLICATIONS 9926 巻 2016年

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り国際誌

Bae, SY; Jung, BO; Lekhal, K; Kim, SY; Lee, JY; Lee, DS; Deki, M; Honda, Y; Amano, H

CRYSTENGCOMM 18 巻 ( 9 ) 頁： 1505 - 1514 2016年

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells 査読有り国際誌

Murotani, H; Yamada, Y; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 5 ) 頁： 940 - 945 2015年5月

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

8 巻 ( 2 ) 頁： 022702 2015年2月

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express 8 巻 ( 2 ) 頁： 022702 2015年2月

Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り国際誌

Kushimoto, M; Tanikawa, T; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 8 巻 ( 2 ) 2015年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

We demonstrated lasing action and investigated the optical properties of [Formula: see text] multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating [Formula: see text] InGaN MQW laser diodes on (001) Si.

DOI： 10.7567/APEX.8.022702

Web of Science

Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region 査読有り国際誌

Jung, BO; Bae, SY; Kim, SY; Lee, S; Lee, JY; Lee, DS; Kato, Y; Honda, Y; Amano, H

NANO ENERGY 11 巻頁： 294 - 303 2015年1月

GaN/SiC Epitaxial growth for high power and high switching speed device applications 査読有り

Zheng Sun, Shigeyoshi Usami, Di Lu, Takahiro Ishii, Marc Olsson, Kouhei Yamashita, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano

Materials Research Society Symposium Proceedings 1736 巻頁： 65 - 69 2015年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：Materials Research Society

We developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH&lt
inf&gt
3&lt
/inf&gt
, TMA1 was flowed without NH&lt
inf&gt
3&lt
/inf&gt
. 1.5 μm of undoped crack-firee GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5 μm)/SiC structure (300 μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.

DOI： 10.1557/opl.2015.102

Scopus

Photocathode electron beam sources using GaN and InGaN with NEA 査読有り

T. Nishitani, T. Maekawa, M. Tabuchi, T. Meguro, Y. Honda, H. Amano

GALLIUM NITRIDE MATERIALS AND DEVICES X 9363 巻 2015年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：SPIE-INT SOC OPTICAL ENGINEERING

A photocathode electron source using p-type GaN and p-type InGaN semiconductors with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by atoms on the surface, which makes it possible for photo excited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN and InGaN semiconductors were measured a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. Lifetime of NEA-photocathodes using the GaN and InGaN were 21 times and 7.7 times longer respectively than that using the GaAs.

DOI： 10.1117/12.2076681

Web of Science

Nature of yellow luminescence band in GaN grown on Si substrate 査読有り国際誌

Ito, S; Nakagita, T; Sawaki, N; Ahn, HS; Irie, M; Hikosaka, T; Honda, Y; Yamaguchi, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 53 巻 ( 11 ) 2014年11月

NEA半導体フォトカソードへの応用を目指したGaN系半導体の量子効率および耐久性の研究 (電子部品・材料) 査読有り国際誌

佐藤大樹, 西谷智博, 前川拓也, 本田善央, 天野浩

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 巻 ( 202 ) 頁： 49-54 - 54 2014年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：一般社団法人電子情報通信学会

負の電子親和力(Negative Electron Affinity:NEA)状態の表面を持つ半導体(NEA半導体フォトカソード)は、高性能電子ビーム源として素粒子実験分野に貢献してきたが、産業利用上、NEA表面の寿命問題を抱える。我々は、半導体のバンドギャップに着目し、NEA表面が得られた際の表面の電子親和力をより小さくすることでこの寿命問題の改善が可能であると考えた。そこで、NEA半導体フォトカソードに用いる半導体として、従来技術のp-GaAsに比べてバンドギャップの大きいp-GaN及びp-InGaNを作製した。作製したp-GaN及びp-InGaNサンプルによるNEA表面活性化実験では、セシウムの供給のみで表面のNEA状態が得られる可能性が示唆され、量子効率の寿命測定では、従来技術のp-GaAsに比べ、p-GaNで17倍、p-InGaNで7倍の長寿命化に成功した。

CiNii Books

P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) 査読有り国際誌

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 巻 ( 58 ) 頁： 109-112 - 112 2014年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：一般社団法人電子情報通信学会

We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

P-GaN by Mg Ion Implantation for Power Device Applications (電子部品・材料) 査読有り

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 巻 ( 57 ) 頁： 109-112 - 112 2014年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：一般社団法人電子情報通信学会

CiNii Books

P-GaN by Mg Ion Implantation for Power Device Applications (電子デバイス) 査読有り

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 巻 ( 56 ) 頁： 109-112 - 112 2014年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：一般社団法人電子情報通信学会

CiNii Books

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask 査読有り国際誌

Son, JS; Honda, Y; Yamaguchi, M; Amano, H