研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 381 - 400 件目／全件表示 >>

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes 査読有り

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a) 208 巻 ( 5 ) 頁： 1175-1178 2011年5月

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes 査読有り

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a) 208 巻 ( 5 ) 頁： 1175-1178 2011年5月

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett. 98 巻 ( 14 ) 頁： 141905 2011年4月

Semi-polar GaN LEDs on Si substrate 査読有り

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁： 38-41 2011年4月

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett. 98 巻 ( 14 ) 頁： 141905 2011年4月

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

Appl. Phys. Lett. 98 巻 ( 14 ) 頁： 141905 2011年4月

Semi-polar GaN LEDs on Si substrate 査読有り

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁： 38-41 2011年4月

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

Appl. Phys. Lett. 98 巻 ( 14 ) 頁： 141905 2011年4月

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates 査読有り

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth 318 巻 ( 1 ) 頁： 500-504 2011年3月

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates 査読有り

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth 318 巻 ( 1 ) 頁： 500-504 2011年3月

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE 7939 巻頁： 79391X 2011年3月

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE 7939 巻頁： 79391X 2011年3月

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)

Chiu, CH; Lin, DW; Lin, CC; Li, ZY; Chang, WT; Hsu, HW; Kuo, HC; Lu, TC; Wang, SC; Liao, WT; Tanikawa, T; Honda, Y; Yamaguchi, M; Sawaki, N

APPLIED PHYSICS EXPRESS 4 巻 ( 3 ) 2011年3月

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

SPIE 7939 巻頁： 79391X 2011年3月

Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates 査読有り

I. W. Feng, X. K. Cao, J. Li, J. Y. Lin, H. X. Jiang, N. Sawaki, Y. Honda, T. Tanikawa, J. M. Zavada

APPLIED PHYSICS LETTERS 98 巻 ( 8 ) 2011年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3 degrees off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (1 (1) over bar 01) epilayers, which exhibit strong photoluminescence emission at 1.54 mu m. The observed emission intensity at 1.54 mu m was comparable to that from similar alloys grown on GaN/AlN/Al(2)O(3) templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556678]

DOI： 10.1063/1.3556678

Web of Science

Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Applied physics express 4 巻 ( 1 ) 頁： "012105 - 1"-"012105-3" 2011年1月

Semi-polar GaN LEDs on Si substrate 査読有り

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁： 38-41 2011年1月

Semi-polar GaN LEDs on Si substrate 査読有り

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁： 38-41 2011年1月

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express 4 巻 ( 1 ) 頁： 01210_1-012105_3 2011年1月

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁： 01AD04_1-01AD04_3 2011年1月

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