研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 221 - 240 件目／全件表示 >>

Annealing effect on threading dislocations in a GaN grown on Si substrate 査読有り国際誌

468 巻頁： 835 - 838 2017年6月

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output 査読有り

56 巻 ( 6 ) 2017年6月

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 査読有り国際誌

468 巻頁： 110 - 113 2017年6月

III-nitride core-shell nanorod array on quartz substrates 査読有り

7 巻 2017年3月

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method 査読有り国際誌

Jeon, H; Jeon, I; Lee, GS; Bae, SG; Ahn, HS; Yang, M; Yi, SN; Yu, YM; Honda, Y; Sawaki, N; Kim, SW

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy 査読有り国際誌

Lee, GS; Jeon, H; Ahn, HS; Yang, M; Yi, SN; Yu, YM; Lee, SC; Honda, Y; Sawaki, N; Kim, SW

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Development of Sustainable Smart Society based on Transformative Electronics 査読有り

頁： . 2017年

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M, Ando Y, Usami S, Nagamatsu K, Kushimoto M, Deki M, Tanaka A, Nitta S, Honda Y, Pristovsek M, Kawai H, Yagi S, Amano H

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁： . 2017年

Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer 査読有り国際誌

Lee, HJ; Bae, SY; Lekhal, K; Mitsunari, T; Tamura, A; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 454 巻頁： 114 - 120 2016年11月

Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE 査読有り国際誌

Lekhal, K; Bae, SY; Lee, HJ; Mitsunari, T; Tamura, A; Deki, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 447 巻頁： 55 - 61 2016年8月

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study 査読有り国際誌

Nagai, S; Yamada, K; Hirano, A; Ippommatsu, M; Ito, M; Morishima, N; Aosaki, K; Honda, Y; Amano, H; Akasaki, I

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 8 ) 2016年8月

記述言語：英語掲載種別：研究論文（学術雑誌）

To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265 nm. Furthermore, a 3 × 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm2-class lighting.

DOI： 10.7567/JJAP.55.082101

Web of Science

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering 査読有り国際誌

Yamamoto, T; Tamura, A; Usami, S; Mitsunari, T; Nagamatsu, K; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H<inf>2</inf>treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN.

DOI： 10.7567/JJAP.55.05FD03

Web of Science

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy 査読有り

Kusaba, A; Kangawa, Y; Honda, Y; Amano, H; Kakimoto, K

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

Study of radiation detection properties of GaN pn diode 査読有り

Sugiura, M; Kushimoto, M; Mitsunari, T; Yamashita, K; Honda, Y; Amano, H; Inoue, Y; Mimura, H; Aoki, T; Nakano, T

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り国際誌

Bae, SY; Jung, BO; Lekhal, K; Lee, DS; Deki, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

DOI： 10.7567/JJAP.55.05FG03

Web of Science

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy 査読有り国際誌

Lekhal, K; Bae, SY; Lee, HJ; Mitsunari, T; Tamura, A; Deki, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

In this paper, we discuss the influence of parameters such as type of carrier gas and NH<inf>3</inf>/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi–quantum wells (MQWs) with a radial structure.

DOI： 10.7567/JJAP.55.05FF03

Web of Science

Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer 査読有り国際誌

Sun, Z; Nagamatsu, K; Olsson, M; Song, PF; Deki, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. By using a preflow trimethylaluminum treatment, the poor wetting problem of gallium on the SiC surface was alleviated, resulting in a 1.2-µm-thick crack-free GaN grown on an on-axis 6H-SiC(0001) substrate via an ultrathin AlGaN interlayer. In this study, the impact of the preflow trimethylaluminum treatment time is investigated to understand why a crack-free epilayer was realized. To demonstrate the electrical performance of devices formed by our technique, GaN/SiC vertical Schottky barrier diodes were fabricated and compared with GaN/AlN/SiC and GaN/GaN vertical Schottky barrier diodes. Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 × 107to 2.0 × 10−1Ω·cm2. The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices.

DOI： 10.7567/JJAP.55.05FB06

Web of Science

Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity 査読有り国際誌

Sato, D; Nishitani, T; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

A thin p-type InGaN with a negative electron affinity (NEA) surface was used to measure the relaxation time of a surface charge limit (SCL) by irradiating rectangular laser beam pulses at changing time interval. The p-type InGaN film was grown by metal organic vapor phase epitaxy and the NEA activation was performed after the sample was heat cleaned. 13 nC per pulse with 10 ms width was obtained from the InGaN photocathode. The current decreased exponentially from the beginning of the pulse. The initial current value after the laser irradiation decreased with the time interval. As a result, the SCL relaxation time was estimated through the InGaN photocathode measurements at 100 ms.

DOI： 10.7567/JJAP.55.05FH05

Web of Science

Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) 査読有り国際誌

Kushimoto, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, [Formula: see text] InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between [Formula: see text] InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001)Si. The emission wavelength increased with the InGaN tilting layer’s growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content [Formula: see text] InGaN MQWs.

DOI： 10.7567/JJAP.55.05FA10

Web of Science

Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy 査読有り国際誌

Lee, GS; Lee, C; Jeon, H; Lee, C; Bae, SG; Ahn, HS; Yang, M; Yi, SN; Yu, YM; Lee, JH; Honda, Y; Sawaki, N; Kim, SW

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

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