論文 - 本田 善央
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Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system 査読有り
K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) 4 巻 ( 1 ) 頁: 29?32 2007年
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Acceptor Level due to Carbon in a (1?101)AlGaN 査読有り
N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, and M. Yamaguchi
AIP Conf. Proc. 893 巻 頁: 281-282 2007年
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Al doping in (1?101) GaN films grown on patterned (001) Si substrate 査読有り
T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Appl. Phys. 101 巻 ( 10 ) 頁: 103513-1-103513-5 2007年
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MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si 査読有り
Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 300 巻 ( 1 ) 頁: 110-113 2007年
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Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE 査読有り
T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 298 巻 頁: 207-210 2007年
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Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures 査読有り
X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki
J. Phys.: Condens. Matter 19 巻 ( 4 ) 頁: 046204_1-046204_11 2007年
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Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy 査読有り
K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) 4 巻 ( 1 ) 頁: 133?136 2007年
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Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE 査読有り
S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) 4 巻 ( 1 ) 頁: 125?128 2007年
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Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate 査読有り
E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2838-2841 2007年
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Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy 査読有り
S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, and N. Sawaki
J. Electron Microsc. 56 巻 ( 4 ) 頁: 141-144 2007年
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Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure 査読有り
S. Tanaka, A. Naito, Y. Honda, N. Sawaki, and M. Ichihashi
J. Electron Microsc. 56 巻 ( 2 ) 頁: 37-42 2007年
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Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE 査読有り
K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, and M. Koike
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2240-2243 2007年
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Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures 査読有り
X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2334-2337 2007年
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The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE 査読有り
T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2506-2509 2007年
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Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE 査読有り
Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2740-2743 2007年
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Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE 査読有り
Y. Honda, S. Kato, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2740-2743 2007年
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Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures 査読有り
X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2334-2337 2007年
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The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE 査読有り
T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2506-2509 2007年
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Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate 査読有り
E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 4 巻 ( 7 ) 頁: 2838-2841 2007年
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Acceptor Level due to Carbon in a (1?101)AlGaN 査読有り
N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi
AIP Conf. Proc. 893 巻 頁: 281 - + 2007年