研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 121 - 140 件目／全件表示 >>

Multiple electron beam generation from InGaN photocathode

Sato, D; Shikano, H; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 39 巻 ( 6 ) 2021年12月

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy 査読有り

Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 119 巻 ( 15 ) 頁： 152102 - 152102 2021年10月

Effective neutron detection using vertical-type BGaN diodes 査読有り

Nakano, T; Mochizuki, K; Arikawa, T; Nakagawa, H; Usami, S; Honda, Y; Amano, H; Vogt, A; Schuett, S; Fiederle, M; Kojima, K; Chichibu, SF; Inoue, Y; Aoki, T

JOURNAL OF APPLIED PHYSICS 130 巻 ( 12 ) 頁： 124501-1 - 10 2021年9月

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Tanaka, A; Sugiura, R; Kawaguchi, D; Yui, T; Wani, Y; Aratani, T; Watanabe, H; Sena, H; Honda, Y; Igasaki, Y; Amano, H

SCIENTIFIC REPORTS 11 巻 ( 1 ) 頁： 17949 2021年9月

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

Sena, H; Tanaka, A; Wani, Y; Aratani, T; Yui, T; Kawaguchi, D; Sugiura, R; Honda, Y; Igasaki, Y; Amano, H

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 127 巻 ( 9 ) 2021年9月

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations

Nagata, K; Makino, H; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

Ando, Y; Deki, M; Watanabe, H; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Yamada, H; Shimizu, M; Nakamura, T; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 頁： 084004 - 084004 2021年8月

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy 査読有り

Ohnishi, K; Amano, Y; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 566 巻頁： 126173 - 126173 2021年7月

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Liao, YQ; Chen, T; Wang, J; Ando, Y; Cai, WT; Yang, X; Watanabe, H; Hirotani, J; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 7 ) 2021年7月

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Kumabe, T; Ando, Y; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 5 ) 頁： 051003 - 051003 2021年5月

Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Nagasawa, Y; Hirano, A; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Akasaki, I; Kojima, K; Chichibu, SF

JOURNAL OF APPLIED PHYSICS 129 巻 ( 16 ) 頁： 164503 - 164503 2021年4月

Experimental demonstration of GaN IMPATT diode at X-band

Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 4 ) 2021年4月

Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects

Schimmel, S; Tomida, D; Ishiguro, T; Honda, Y; Chichibu, S; Amano, H

CRYSTALS 11 巻 ( 4 ) 頁： 356 - 356 2021年4月

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

Yamada, T; Ando, Y; Watanabe, H; Furusawa, Y; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Suda, J; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 3 ) 2021年3月

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution 査読有り

Schimmel, S; Tomida, D; Saito, M; Bao, QX; Ishiguro, T; Honda, Y; Chichibu, S; Amano, H

CRYSTALS 11 巻 ( 3 ) 頁： 254 -1 - 27 2021年3月

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication 査読有り

Yasuda, H; Nishitani, T; Ichikawa, S; Hatanaka, S; Honda, Y; Amano, H

QUANTUM BEAM SCIENCE 5 巻 ( 1 ) 頁： 5 - 5 2021年3月

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

T. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide

Applied Physics Letters 118 巻 ( 7 ) 2021年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

The leakage current caused by the Si pileup at the regrowth interface of AlGaN/GaN high electron mobility transistors (HEMTs) is significantly suppressed by the semi-insulating Mg-doped GaN layer. Mg is unintentionally doped and can be originated from the graphite susceptor of metal organic vapor phase epitaxy. Before regrowth of the AlGaN/GaN heterostructure, the GaN template is treated with hydrochloric acid (HCl) and hydrogen peroxide/potassium hydroxide (H2O2/KOH) solution to promote the adsorption of Mg on the GaN surface. The Mg-doped GaN channel layer is highly resistive due to the passivation of hydrogen. The p-n junction formed by the weakly p-type Mg-doped GaN layer and the n-type Si pileup layer depletes the excess electrons at the regrowth interface. As a result, the off-state drain leakage current of the HEMT device can be decreased by two orders of magnitude at 40 V.

DOI： 10.1063/5.0034584

Scopus

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 11 巻 ( 2 ) 頁： 524 - 524 2021年2月

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