研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 594 件中 141 - 160 件目／全件表示 >>

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 24 ) 頁： 242104 - 242104 2020年12月

Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

Nagasawa, Y; Hirano, A; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Akasaki, I; Kojima, K; Chichibu, SF

APPLIED PHYSICS EXPRESS 13 巻 ( 12 ) 2020年12月

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Yang, X; Pristovsek, M; Nitta, S; Liu, YH; Honda, Y; Koide, Y; Kawarada, H; Amano, H

ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 41 ) 頁： 46466 - 46475 2020年10月

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 10 巻 ( 10 ) 頁： 2614 - 2623 2020年10月

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures 査読有り

Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 479 巻頁： 7 - 12 2020年9月

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 10 ) 頁： 102102 - 102102 2020年9月

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO 査読有り

Kimura, T; Ohnishi, K; Amano, Y; Fujimoto, N; Araidai, M; Nitta, S; Honda, Y; Amano, H; Kangawa, Y; Shiraishi, K

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 8 ) 頁： 088001 - 088001 2020年8月

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN 査読有り

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

JOURNAL OF MATERIALS CHEMISTRY C 8 巻 ( 25 ) 頁： 8668 - 8675 2020年7月

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

T. Nakano, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama, Y. Kangawa, S. Usami, N. Mayama, K. Toda, A. Tanaka, Y. Honda, H. Amano

Applied Physics Letters 117 巻 ( 1 ) 頁： 012105 - 012105 2020年7月

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures 査読有り

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁： . 2020年7月

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering 査読有り

Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 217 巻 ( 14 ) 2020年7月

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO 査読有り

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 13 巻 ( 6 ) 頁： . 2020年6月

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 539 巻頁： . - 125643 2020年6月

Impact of high-temperature implantation of Mg ions into GaN 査読有り

Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano

Japanese Journal of Applied Physics 59 巻 ( 5 ) 頁： 056502 - 056502 2020年5月

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method 査読有り

Tanaka, A; Inotsume, S; Harada, S; Hanada, K; Honda, Y; Ujihara, T; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR 査読有り

Sakai, T; Kushimoto, M; Zhang, ZY; Sugiyama, N; Schowalter, LJ; Honda, Y; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS 116 巻 ( 12 ) 2020年3月

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN 査読有り

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 3 ) 2020年3月

InGaN半導体フォトカソードにおける量子効率のInGaN膜厚依存性

佐藤大樹, 本田杏奈, 小泉淳, 西谷智博, 本田善央, 天野浩

応用物理学会学術講演会講演予稿集 2020.1 巻頁： 1516 - 1516 2020年2月

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode 査読有り

Sato, D; Honda, A; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

MICROELECTRONIC ENGINEERING 223 巻 2020年2月

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry 査読有り

Ye, Z; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 2 ) 2020年2月

　前のページ - 次のページ　

<本田 善央>

論文 - 本田 善央

<本田　善央>

論文 - 本田　善央