論文 - 本田 善央
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Raman Spectroscopic Study of GaN Grown on (111)Si Using an AlInN Intermediate Layer by MOVPE 査読有り
T.Sugiura, S.Kawasaki, Y.Honda, T.Nonaka, D.Oikawa, T.Tsukamoto, H.Andoh, H.Amano
Book of abstracts ISGN-7(7th International Symposium on Growth of IIINitrides) 頁： Po01 2018年8月
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Ueoka, Y; Deki, M; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月
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Yamada, K; Nagasawa, Y; Nagai, S; Hirano, A; Ippommatsu, M; Aosaki, K; Honda, Y; Amano, H; Akasaki, I
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 10 ) 2018年5月
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Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 9 ) 2018年5月
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Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy 査読有り
11 巻 ( 5 ) 2018年5月
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Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching 査読有り
Matsumoto, K; Ono, T; Honda, Y; Yamamoto, T; Usami, S; Kushimoto, M; Murakami, S; Amano, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255 巻 ( 5 ) 2018年5月
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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate 査読有り
Usami, S; Ando, Y; Tanaka, A; Nagamatsu, K; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H; Sugawara, Y; Yao, YZ; Ishikawa, Y
APPLIED PHYSICS LETTERS 112 巻 ( 18 ) 2018年4月
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Yang, X; Nitta, S; Nagamatsu, K; Bae, SY; Lee, HJ; Liu, YH; Pristovsek, M; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH 482 巻 頁： 1 - 8 2018年1月
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Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN 査読有り
Nakano, T; Araidai, M; Shiraishi, K; Tanaka, A; Honda, Y; Amano, H
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 86 巻 ( 12 ) 頁： 41 - 49 2018年
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Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes 査読有り
Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi
PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018) 頁： 831-837 2018年
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Charge-to-time converting leading-edge discriminator for plastic-scintillator signals 査読有り 国際誌
875 巻 頁： 193 - 200 2017年12月
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Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes 査読有り 国際誌
Sang, LW; Ren, B; Sumiya, M; Liao, MY; Koide, Y; Tanaka, A; Cho, YJ; Harada, Y; Nabatame, T; Sekiguchi, T; Usami, S; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS 111 巻 ( 12 ) 2017年9月
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Tanikawa, T; Shojiki, K; Katayama, R; Kuboya, S; Matsuoka, T; Honda, Y; Amano, H
APPLIED PHYSICS EXPRESS 10 巻 ( 8 ) 2017年8月
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Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants 査読有り
Bae, SY; Lekhal, K; Lee, HJ; Min, JW; Lee, DS; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月
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Tanaka, A; Barry, O; Nagamatsu, K; Matsushita, J; Deki, M; Ando, Y; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes 査読有り 国際誌
Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月
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Nagamatsu, K; Nitta, S; Ye, Z; Nagao, H; Miki, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月
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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 査読有り 国際誌
Sun, Z; Song, PF; Nitta, S; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 866 - 869 2017年6月
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Lee, HJ; Bae, SY; Lekhal, K; Tamura, A; Suzuki, T; Kushimoto, M; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 547 - 551 2017年6月
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Barry, OI; Tanaka, A; Nagamatsu, K; Bae, SY; Lekhal, K; Matsushita, J; Deki, M; Nitta, S; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 552 - 556 2017年6月