研究者詳細 - 本田　善央

論文 - 本田　善央

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HVPE growth of a -plane GaN on a GaN template (110)Si substrate 査読有り

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) 7 巻 ( 7-8 ) 頁： 1760–1763 2010年7月

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製査読有り

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report 109 巻 ( 422 ) 頁： 23 - 28 2010年2月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製査読有り

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report 109 巻 ( 423 ) 頁： 23 - 28 2010年2月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

HVPE growth of a-plane GaN on a GaN template (110)Si substrate 査読有り

Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 7 巻 ( 7-8 ) 2010年

Selective growth and impurity incorporation in semipolar GaN grown on Si substrate 査読有り

N. Sawaki, Y. Honda, T. Hikosaka, S. Tanaka, M. Yamaguchi, N. Koide, K. Tomita

GALLIUM NITRIDE MATERIALS AND DEVICES V 7602 巻 2010年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：SPIE-INT SOC OPTICAL ENGINEERING

Semipolar nitrogen terminated (1-101) GaN film was grown on a patterned (001) Si substrate using selective area metal organic vapor phase epitaxy. By using a high temperature grown AlN buffer layer upon oblique (111) Si facets on the substrate, we achieved a GaN crystal film with low dislocation density. Because the growth of GaN crystal was self-organized on the facets, we achieved two dimensional growth mode automatically, and the surface roughness was as small as 0.2nm. Incorporation of magnesium (Mg) and carbon (C) in the (1-101) GaN was studied extensively. It was found that the Mg doping efficiency is superior on (1-101) face to that on (0001) face. In case of C doping, a shallow acceptor level was generated in (1-101) face and p-type conduction was realized.

Web of Science

Percolation transport in an AlGaN/GaN heterostructure 招待有り査読有り

N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

Journal of Physics: Conference Series 193 巻頁： 012012_1-012012_4 2009年11月

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates 査読有り

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Korean Phys. Soc. 54 巻 ( 6 ) 頁： 2363 2009年6月

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates 査読有り

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Korean Phys. Soc. 54 巻 ( 6 ) 頁： 2363 2009年6月

*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate 査読有り

Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar

phys. stat. sol. (c) 6 巻 ( S2 ) 頁： S772 2009年5月

*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate 査読有り

Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar

phys. stat. sol. (c) 6 巻 ( S2 ) 頁： S772 2009年5月

*Growth and properties of semi-polar GaN on a patterned silicon substrate 査読有り

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2867 2009年3月

Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy 査読有り

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2914 2009年3月

MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer 査読有り

M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2891 2009年3月

*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si 査読有り

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2879 2009年3月

*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate 査読有り

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2875 2009年3月

*Growth and properties of semi-polar GaN on a patterned silicon substrate 査読有り

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2867 - 2867 2009年3月

*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si 査読有り

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2879 2009年3月

*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate 査読有り

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2875 2009年3月

Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy 査読有り

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2914 2009年3月

MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer 査読有り

M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth 311 巻 ( 10 ) 頁： 2891 2009年3月

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