研究者詳細 - 本田　善央

(001)Si傾斜基板上への常圧選択MOVPE成長法により、(1-101)面を表面とするGaNが作製できる。この方法で得られるGaN(1-101)面は窒素面となり、ガリウムを最表面とする(0001)面とは、成長モードや不純物の取り込みが異なると予想される。実際、この(1-101)GaNはノンドーピングでp型伝導性を示した。この試料にSiドーピングを行った結果、p型伝導からn型伝導へと変化した。一方、Cドーピングでは試料はすべてp型伝導を示し、ドーピングによる正孔濃度の増加が確認された。これは(1-101)面においてSiはドナー不純物、Cはアクセプター不純物として働くことを示唆しており、p型伝導はCの窒素原子との置換によるものであると考えられる。

CiNii Research

[Congenital middle ear cholesteatoma: experience in 48 cases].

Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

Nihon Jibiinkoka Gakkai kaiho 106 巻 ( 9 ) 頁： 856 - 65 2003年9月

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy. 査読有り

Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

Japanese Journal of Applied Physics 40 巻 ( 3B ) 頁： 1896 - 1898 2001年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Japan Society of Applied Physics

A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

DOI： 10.1143/jjap.40.1896

CiNii Research

Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy 査読有り

37 巻 ( 8B ) 頁： L966 - L969 1998年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：社団法人応用物理学会

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

DOI： 10.1143/jjap.37.l966

CiNii Research

Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy

Ohnishi, K; Hamasaki, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 648 巻 2024年12月

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Chichibu, SF; Shima, K; Uedono, A; Ishibashi, S; Iguchi, H; Narita, T; Kataoka, K; Tanaka, R; Takashima, S; Ueno, K; Edo, M; Watanabe, H; Tanaka, A; Honda, Y; Suda, J; Amano, H; Kachi, T; Nabatame, T; Irokawa, Y; Koide, Y

JOURNAL OF APPLIED PHYSICS 135 巻 ( 18 ) 2024年5月

Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy

Hamasaki, K; Ohnishi, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 628 巻頁： 127529 - 127529 2024年2月

Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

Watanabe, H; Nitta, S; Ando, Y; Ohnishi, K; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 628 巻頁： 127552 - 127552 2024年2月

Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 547 巻 2024年2月

Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

Inahara, D; Matsuda, S; Matsumura, W; Okuno, R; Hanasaku, K; Kowaki, T; Miyamoto, M; Yao, YZ; Ishikawa, Y; Tanaka, A; Honda, Y; Nitta, S; Amano, H; Kurai, S; Okada, N; Yamada, Y

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 220 巻 ( 16 ) 2023年8月

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic 査読有り

Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 122 巻 ( 14 ) 2023年4月

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