Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano

Applied Physics Letters Vol. 117 ( 24 ) page： 242104 - 242104 2020.12

Detailed analysis of Ga-rich current pathways using n-Al0.7Ga0.3N layer grown on AlN template with dense macrosteps

Yosuke Nagasawa, Akira Hirano, Masamichi Ipponmatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Kazunobu Kojima, Shigefusa F. Chichibu

Applied Physics Express Vol. 13 ( 12 ) 2020.12

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Xu Yang, Markus Pristovsek, Shugo Nitta, Yuhuai Liu, Yoshio Honda, Yasuo Koide, Hiroshi Kawarada, Hiroshi Amano

ACS APPLIED MATERIALS & INTERFACES Vol. 12 ( 41 ) page： 46466 - 46475 2020.10

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER CHEMICAL SOC

Hexagonal boron nitride (hBN) and diamond are promising materials for next-generation electronics and optoelectronics. However, their combination is rarely reported. In this study, we for the first time demonstrate the success to direct growth of two-dimensional (2D) hBN crystal layers on diamond substrates by metalorganic vapor phase epitaxy. Compared with the disordered growth we found on diamond (100), atomic force microscopy, X-ray diffraction, and transmission electron microscopy results all support 2D hBN with highly oriented lattice formation on diamond (111). Also, the epitaxial relationship between hBN and diamond (111) substrate is revealed to be [0 0 0 1](hBN) // [1 1 1](diamond) and [1 0 (1) over bar 0](hBN) // [1 1 (2) over bar](diamond) The valence band offset at hBN/diamond (111) heterointerface determined by X-ray photoelectron spectroscopy is 1.4 +/- 0.2 eV, thus yielding a conduction band offset of 1.0 +/- 0.2 eV and type II staggered band alignment with a bandgap of 5.9 eV assumed for hBN. Furthermore, prior thermal cleaning of diamond in a pure H-2 atmosphere smoothens the surface for well-ordered layered hBN epitaxy, while thermal cleaning in a mixed H-2 and NH3 atmosphere etches the diamond surface, creating many small faceted pits that destroy the following epitaxy of hBN.

DOI： 10.1021/acsami.0c11883

Web of Science

PubMed

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Shin-Ichiro Sato, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Tomoaki Nishimura, Brant C. Gibson, Andrew D. Greentree, Hiroshi Amano, Takeshi Ohshima

OPTICAL MATERIALS EXPRESS Vol. 10 ( 10 ) page： 2614 - 2623 2020.10

Language：English Publishing type：Research paper (scientific journal) Publisher：OPTICAL SOC AMER

Wide bandgap semiconductors are increasingly important for bioimaging applications, as they can possess good biocompatibility and host a large range of fluorescent defects spanning the visible to infrared. Gallium nitride is one promising host for photostable fluorophores. In particular, neodymium (Nd)-doped gallium nitride (GaN) shows bright near-infrared fluorescence and narrow room temperature linewidth and is therefore a candidate material for fluorescent probes for bioimaging. To explore the conditions necessary to generate biomarkers based on Nd:GaN, this paper reports the room temperature photoluminescence (FL) properties of small ensembles of Nd ions implanted into the nanoscale regions of GaN epilayers. The minimum volume of Nd-implanted GaN that can be optically detected in this study is about 8x10(4) nm(3) and the minimum detected ensemble of Nd ions is about 4x10(3), although not all of implanted Nd ions activate as luminescence centers. We show from the PL excitation spectra that the strongest resonant excitation appears at 619 nm, attributed to the I-4(9/2) -> (4)G(5/2) ((4)G(7/)(2)) transition in the 4f-shell. We measure the luminescence lifetime to be several tens of microseconds. We also identify the presence of a different excitation mechanism from the resonant excitation when excited below 510 nm (above 2.43 eV). (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

DOI： 10.1364/OME.401765

Web of Science

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures Reviewed

Shin-ichiro Sato, Manato Deki, Tomoaki Nishimura, Hiroshi Okada, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Takeshi Ohshima

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 479 page： 7 - 12 2020.9

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano

Applied Physics Letters Vol. 117 ( 10 ) page： 102102 - 102102 2020.9

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO Reviewed

Tomoya Kimura, Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Masaaki Araidai, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Kangawa, Kenji Shiraishi

Japanese Journal of Applied Physics Vol. 59 ( 8 ) page： 088001 - 088001 2020.8

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN Reviewed

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF MATERIALS CHEMISTRY C Vol. 8 ( 25 ) page： 8668 - 8675 2020.7

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

T. Nakano, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama, Y. Kangawa, S. Usami, N. Mayama, K. Toda, A. Tanaka, Y. Honda, H. Amano

Applied Physics Letters Vol. 117 ( 1 ) page： 012105 - 012105 2020.7

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 7 ) page： . 2020.7

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering Reviewed

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 217 ( 14 ) 2020.7

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 6 ) page： . 2020.6

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 539 page： . - 125643 2020.6

Impact of high-temperature implantation of Mg ions into GaN Reviewed

Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano

Japanese Journal of Applied Physics Vol. 59 ( 5 ) page： 056502 - 056502 2020.5

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X-ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.

DOI： 10.1002/pssb.201900553

Web of Science

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR Reviewed

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 116 ( 12 ) 2020.3

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN Reviewed

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 35 ( 3 ) 2020.3

Dependence of quantum efficiency on InGaN thickness in InGaN photocathode

Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2020.1 page： 1516 - 1516 2020.2

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode Reviewed

Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

MICROELECTRONIC ENGINEERING Vol. 223 2020.2

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER

The quantum efficiency (QE) of an InGaN photocathode as a function of InGaN layer thickness (240, 100, and 70 nm) was investigated. To activate the sample surface, Cs and O were deposited on the surface in an ultrahigh-vacuum chamber. The QE for different optical power densities was measured by irradiating excitation light from the front and back sides of each sample. The QEs for InGaN layer thickness of 240, 100, and 70 nm with back-side irradiation were 0.9, 9.8, and 7.5%, respectively. For the thicknesses of 70 and 100 nm, the QEs were higher for back-side irradiation than for front-side irradiation, whereas for the thickness of 240 nm, the QE was higher for front-side irradiation. The InGaN layer thickness dependence of the QEs for back- and front-side irradiations was calculated using a continuous equation considering processes such as excitation, diffusion, recombination, and escape of electrons from the surface of the photocathode. The tendency of the experimental results, where QE was maximum at 100-120 nm, corresponded to that of the calculated results.

DOI： 10.1016/j.mee.2020.111229

Web of Science

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry Reviewed

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 2 ) 2020.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The decomposition of trimethylgallium (Ga(CH3)(3)) was examined under H-2 and N-2 atmospheres using a high-resolution (about 0.002 u) time-of-flight mass spectrometry system, which enabled the separation of N-2 and ethene (C2H4) signals. Under H-2 atmosphere, the main decomposition product was methane (CH4) formed by the hydrogenolysis of Ga(CH3)(3). However, under N-2 atmosphere, the main product is ethane (C2H6) at temperature lower than 660 degrees C. Above 660 degrees C, the C2H6 further decomposes into CH4, acetylene (C2H2) and C2H4, and the main components in the gas phase are C2H2 and C2H4 above 1000 degrees C. Since these are effective carbon dopants, the molar ratio of H-2 to the Ga(CH3)(3) raw material in the carrier gas should be maintained above 300 to inhibit the formation of hydrocarbons in N-2. (C) 2020 The Japan Society of Applied Physics

DOI： 10.35848/1347-4065/ab6fb0

Web of Science

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Papers - HONDA, Yoshio