Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

Tanikawa, Tomoyuki, Sano, Tomotaka, Kushimoto, Maki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC05 2013

Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC04 2013

Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Journal of Applied Physics Vol. 114 ( 15 ) page： 153506 2013

Defects generation and annihilation in GaN grown on patterned silicon substrate

N. Sawaki, S. Ito, T. Nakagita, H. Iwata, T. Tanikawa, M. Irie, Y. Honda, M. Yamaguchi, H. Amano

GALLIUM NITRIDE MATERIALS AND DEVICES VIII Vol. 8625 page： 86250K-86250K-6 2013

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.

DOI： 10.1117/12.2002738

Web of Science

Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

Thin Solid Films Vol. 546 page： 108-113 2013

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE07 2013

High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

Sano, Tomotaka, Doi, Tomohiro, Inada, Shunko Albano, Sugiyama, Tomohiko, Honda, Yoshio, Amano, Hiroshi, Yoshino, Takashi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JK09 2013

Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB16 2013

Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB09 2013

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

phys. stat. sol. (a) Vol. 210 ( 2 ) page： 383-385 2012.12

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

phys. stat. sol. (a) Vol. 210 ( 2 ) page： 383-385 2012.12

InGaNナノワイヤの内部量子効率に対する積層欠陥の影響

室谷英彰, 安藤浩哉, 塚本武彦, 杉浦藤虎, 山田陽一, 田畑拓也, 本田善央, 山口雅史, 天野浩

応用物理学会学術講演会講演予稿集 Vol. 2012.2 page： 3246 - 3246 2012.8

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Electron devices Vol. 112 ( 32 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

Technical report of IEICE. SDM Vol. 112 ( 34 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

Vol. 112 ( 33 ) page： 15 - 18 2012.5

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

phys. stat. sol. (b) Vol. 249 ( 3 ) page： 468–471 2012.3

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

phys. stat. sol. (b) Vol. 249 ( 3 ) page： 468–471 2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 875–878 2012.3

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Papers - HONDA, Yoshio