Papers - HONDA, Yoshio
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HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed
T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 7 ( 7-8 ) page: 1760–1763 2010.7
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選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed
TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito
IEICE technical report Vol. 109 ( 422 ) page: 23 - 28 2010.2
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選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed
TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito
IEICE technical report Vol. 109 ( 423 ) page: 23 - 28 2010.2
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HVPE growth of a-plane GaN on a GaN template (110)Si substrate Reviewed
Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 Vol. 7 ( 7-8 ) 2010
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Selective growth and impurity incorporation in semipolar GaN grown on Si substrate Reviewed
N. Sawaki, Y. Honda, T. Hikosaka, S. Tanaka, M. Yamaguchi, N. Koide, K. Tomita
GALLIUM NITRIDE MATERIALS AND DEVICES V Vol. 7602 2010
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Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed
N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi
Journal of Physics: Conference Series Vol. 193 page: 012012_1-012012_4 2009.11
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Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Korean Phys. Soc. Vol. 54 ( 6 ) page: 2363 2009.6
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Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Korean Phys. Soc. Vol. 54 ( 6 ) page: 2363 2009.6
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*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar
phys. stat. sol. (c) Vol. 6 ( S2 ) page: S772 2009.5
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*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar
phys. stat. sol. (c) Vol. 6 ( S2 ) page: S772 2009.5
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*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi
J. Cryst. Growth Vol. 311 ( 10 ) page: 2867 2009.3
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Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2914 2009.3
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MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2891 2009.3
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*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2879 2009.3
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*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2875 2009.3
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*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi
J. Cryst. Growth Vol. 311 ( 10 ) page: 2867 - 2867 2009.3
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*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2879 2009.3
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*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2875 2009.3
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Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2914 2009.3
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MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page: 2891 2009.3