Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 7 ( 7-8 ) page： 1760–1763 2010.7

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report Vol. 109 ( 422 ) page： 23 - 28 2010.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report Vol. 109 ( 423 ) page： 23 - 28 2010.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

HVPE growth of a-plane GaN on a GaN template (110)Si substrate Reviewed

Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 Vol. 7 ( 7-8 ) 2010

Selective growth and impurity incorporation in semipolar GaN grown on Si substrate Reviewed

N. Sawaki, Y. Honda, T. Hikosaka, S. Tanaka, M. Yamaguchi, N. Koide, K. Tomita

GALLIUM NITRIDE MATERIALS AND DEVICES V Vol. 7602 2010

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

Semipolar nitrogen terminated (1-101) GaN film was grown on a patterned (001) Si substrate using selective area metal organic vapor phase epitaxy. By using a high temperature grown AlN buffer layer upon oblique (111) Si facets on the substrate, we achieved a GaN crystal film with low dislocation density. Because the growth of GaN crystal was self-organized on the facets, we achieved two dimensional growth mode automatically, and the surface roughness was as small as 0.2nm. Incorporation of magnesium (Mg) and carbon (C) in the (1-101) GaN was studied extensively. It was found that the Mg doping efficiency is superior on (1-101) face to that on (0001) face. In case of C doping, a shallow acceptor level was generated in (1-101) face and p-type conduction was realized.

Web of Science

Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

Journal of Physics: Conference Series Vol. 193 page： 012012_1-012012_4 2009.11

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Korean Phys. Soc. Vol. 54 ( 6 ) page： 2363 2009.6

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Korean Phys. Soc. Vol. 54 ( 6 ) page： 2363 2009.6

*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar

phys. stat. sol. (c) Vol. 6 ( S2 ) page： S772 2009.5

*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar

phys. stat. sol. (c) Vol. 6 ( S2 ) page： S772 2009.5

*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi

J. Cryst. Growth Vol. 311 ( 10 ) page： 2867 2009.3

Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 311 ( 10 ) page： 2914 2009.3

MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 311 ( 10 ) page： 2891 2009.3

*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 311 ( 10 ) page： 2879 2009.3

*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 311 ( 10 ) page： 2875 2009.3

*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi

J. Cryst. Growth Vol. 311 ( 10 ) page： 2867 - 2867 2009.3

*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 311 ( 10 ) page： 2879 2009.3

*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki