Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 480–483 2012.3

A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, and H. Amano

SPIE Vol. 8262 page： 82620D 2012.3

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 480–483 2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Reviewed

Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda, Hiroshi Amano

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 209 ( 3 ) page： 501 - 504 2012.3

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

We have demonstrated a high sheet carrier concentration in AlGaN-channel high-electron-mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X-ray diffraction and reveal that the partial lattice relaxation occurs in the Al0.51GaN-channel layers on the AlN buffer layers, and that the AlN barrier layer was coherently grown on the AlGaN channel layer. The sheet carrier concentration due to two-dimensional electron gases of the AlN/Al0.51GaN HEMT is 2.8 x 10(13) cm (2), which is enhanced owing to the use of AlN as the barrier layer. This value of the sheet carrier concentration agrees with the calculated value based on the model of partial lattice relaxation in AlGaN channel layer. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI： 10.1002/pssa.201100379

Web of Science

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

InGaNナノワイヤにおける内部量子効率の発光波長依存性

室谷英彰, 安藤浩哉, 塚本武彦, 杉浦藤虎, 山田陽一, 田畑拓也, 本田善央, 山口雅史, 天野浩

応用物理学会学術講演会講演予稿集 Vol. 2012.1 page： 140 - 140 2012.2

Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

N. Sawaki, K. Hagiwara, T. Hikosaka, and Y. Honda

Semicond. Sci. Technol. Vol. 27 page： 024006_1-024006_5 2012.1

Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

N. Sawaki, K. Hagiwara, T. Hikosaka, Y. Honda

Semicond. Sci. Technol. Vol. 27 page： 024006_1-024006_5 2012.1

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 Vol. 9 ( 3-4 ) page： 646 - 649 2012

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

Mitsunari Tadashi, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 Vol. 9 ( 3-4 ) page： 480 - 483 2012

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 Vol. 9 ( 3-4 ) page： 875 - 878 2012

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

We measured drain bias stress effects and current collapse in AlGaN/GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage (V-th=-1.8 V). On the other hand, a c-plane HFET (c-HFET) with the same barrier thickness (20 nm) shows a small current collapse, although V-th was negatively large (V-th=-4 V). Current collapse in a-HFET was not large compared with that in conventional c-HFET on GaN. A c-HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin-barrier c-HFET (Vth=-1.8 V) were particularly large. Therefore, an a-plane device is promising for a small or positive Vth with small current collapse. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI： 10.1002/pssc.201100397

Web of Science

A local vibration mode in a carbon doped (1-101)AlGaN

N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, H. Amano

GALLIUM NITRIDE MATERIALS AND DEVICES VII Vol. 8262 page： 82620D 2012

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

Behavior of carbon (C) doping in a (1-101)AlGaN has been investigated by grazing incidence FTIR analyses at room temperature. The sample was grown by MOVPE on (1-101) facets of GaN triangular stripes made on (111) Si substrate. Intentional C doping was performed by introducing C2H2 into the reactor during the growth. In the FTIR spectra, a C related LVM mode was found out at 950 cm(-1) which was associated with A(1)(LO) mode of AlN at 890cm-1. The behavior was similar to the results found in an un-intentionally Al doped GaN sample. Linear chain model with an effective mass gives the LVM energy of Al-C bond at 930 cm(-1), a little lower than the experimental observation. The C doping on the N site might be performed forming a complex with additional elements.

DOI： 10.1117/12.905529

Web of Science

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

Jpn. J. Appl. Phys. Vol. 50 ( 12 ) page： 122101_1-122101_3 2011.12

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

Jpn. J. Appl. Phys. Vol. 50 ( 12 ) page： 122101_1-122101_3 2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

AIP Conf. Proc. Vol. 1399 page： 503-504 2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

AIP Conf. Proc. Vol. 1399 page： 503-504 2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

AIP Conf. Proc. Vol. 1399 page： 503-504 2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

AIP Conf. Proc. Vol. 1399 page： 503-504 2011.12

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

Kim Myunghee, Fujita Takehiko, Fukahori Shinya, INAZU Tetsuhiko, PERNOT Cyril, NAGASAWA Yosuke, HIRANO Akira, IPPOMMATSU Masamichi, IWAYA Motoaki, TAKEUCHI Tetsuya, KAMIYAMA Satoshi, YAMAGUCHI Masahito, HONDA Yoshio, AMANO Hiroshi, AKASAKI Isamu

Applied physics express Vol. 4 ( 9 ) page： "092102 - 1"-"092102-3" 2011.9

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Papers - HONDA, Yoshio