Papers - HONDA, Yoshio
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Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed
K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) Vol. 4 ( 1 ) page： 29?32 2007
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Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed
N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, and M. Yamaguchi
AIP Conf. Proc. Vol. 893 page： 281-282 2007
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Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed
T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Appl. Phys. Vol. 101 ( 10 ) page： 103513-1-103513-5 2007
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MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed
Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 300 ( 1 ) page： 110-113 2007
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Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed
T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 298 page： 207-210 2007
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Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed
X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki
J. Phys.: Condens. Matter Vol. 19 ( 4 ) page： 046204_1-046204_11 2007
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Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed
K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) Vol. 4 ( 1 ) page： 133?136 2007
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Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed
S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike
phys. stat. sol. (c) Vol. 4 ( 1 ) page： 125?128 2007
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Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed
E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2838-2841 2007
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Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed
S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, and N. Sawaki
J. Electron Microsc. Vol. 56 ( 4 ) page： 141-144 2007
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Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed
S. Tanaka, A. Naito, Y. Honda, N. Sawaki, and M. Ichihashi
J. Electron Microsc. Vol. 56 ( 2 ) page： 37-42 2007
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Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed
K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, and M. Koike
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2240-2243 2007
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Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed
X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2334-2337 2007
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The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed
T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2506-2509 2007
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Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed
Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2740-2743 2007
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Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed
Y. Honda, S. Kato, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2740-2743 2007
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Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed
X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2334-2337 2007
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The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed
T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2506-2509 2007
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Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed
E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 4 ( 7 ) page： 2838-2841 2007
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Acceptor level due to carbon in a (1-101)AlGaN Reviewed
N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi
PHYSICS OF SEMICONDUCTORS, PTS A AND B Vol. 893 page： 281 - + 2007